MJD45H11-1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Width :

2.38mm

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

5V

Length :

6.73mm

Collector Emitter Saturation Voltage :

1V

Peak Reflow Temperature (Cel) :

260

Number of Pins :

4

Number of Elements :

1

Collector Emitter Breakdown Voltage :

80V

Halogen Free :

Halogen Free

Published :

2003

Packaging :

Tube

Vce Saturation (Max) @ Ib, Ic :

1V @ 400mA, 8A

JESD-30 Code :

R-PSIP-T3

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Max Collector Current :

8A

Radiation Hardening :

No

Power Dissipation :

1.75W

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 4A 1V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Contact Plating :

Tin

Height :

6.22mm

Case Connection :

COLLECTOR

Transition Frequency :

40MHz

Pin Count :

4

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

5V

Frequency :

90MHz

Collector Emitter Voltage (VCEO) :

80V

Number of Terminations :

3

Voltage - Rated DC :

-80V

Lead Free :

Lead Free

Current Rating :

-8A

hFE Min :

60

Gain Bandwidth Product :

90MHz

Current - Collector Cutoff (Max) :

1μA

Mounting Type :

Through Hole

Max Power Dissipation :

1.75W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Transistor Type :

PNP

Base Part Number :

MJD45H11

Element Configuration :

Single

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Pbfree Code :

yes

Polarity/Channel Type :

PNP

RoHS Status :

ROHS3 Compliant