MJD45H11-001

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Mfr.Part #
MJD45H11-001
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS PNP 80V 8A IPAK
Stock
30,097
In Stock :
30,097

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Reach Compliance Code :
not_compliant
Base Part Number :
MJD45H11
Pin Count :
4
Pbfree Code :
No
Terminal Finish :
Tin/Lead (Sn/Pb)
Element Configuration :
Single
Lead Free :
Contains Lead
JESD-609 Code :
e0
JESD-30 Code :
R-PSIP-T3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Published :
2003
Transition Frequency :
90MHz
Number of Pins :
4
ECCN Code :
EAR99
hFE Min :
60
Max Collector Current :
8A
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Number of Elements :
1
Transistor Application :
SWITCHING
Lifecycle Status :
Obsolete (Last Updated: 2 weeks ago)
Collector Emitter Saturation Voltage :
1V
Collector Base Voltage (VCBO) :
5V
Case Connection :
COLLECTOR
Mounting Type :
Through Hole
Number of Terminations :
3
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Current - Collector Cutoff (Max) :
1μA
RoHS Status :
Non-RoHS Compliant
Surface Mount :
No
Current - Collector (Ic) (Max) :
8A
Emitter Base Voltage (VEBO) :
5V
Packaging :
Tube
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
240
Current Rating :
-8A
Collector Emitter Breakdown Voltage :
80V
Qualification Status :
Not Qualified
Polarity/Channel Type :
PNP
Time@Peak Reflow Temperature-Max (s) :
30
Max Power Dissipation :
1.75W
Gain Bandwidth Product :
90MHz
Voltage - Rated DC :
-80V
Collector Emitter Voltage (VCEO) :
1V
Transistor Type :
PNP
Datasheets
MJD45H11-001
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD45H11-001 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MJD45H11, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, Number of Terminations:3, MJD45H11-001 pinout, MJD45H11-001 datasheet PDF, MJD45H11-001 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD45H11-001 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD45H11-001


PNP -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole

MJD45H11-001 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 90MHz.During maximum operation, collector current can be as low as 8A volts.

MJD45H11-001 Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 90MHz


MJD45H11-001 Applications


There are a lot of ON Semiconductor
MJD45H11-001 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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