MJD44H11TF
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- Mfr.Part #
- MJD44H11TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 80V 8A DPAK
- Stock
- 16,817
- In Stock ：
- 16,817
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 80V
- Voltage - Rated DC :
- 80V
- Width :
- 6.1mm
- Length :
- 6.6mm
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Current Rating :
- 8A
- Max Power Dissipation :
- 1.75W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 10μA
- Collector Emitter Breakdown Voltage :
- 80V
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Terminal Form :
- Gull wing
- Weight :
- 260.37mg
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Transition Frequency :
- 50MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2009
- Max Collector Current :
- 8A
- Factory Lead Time :
- 6 Weeks
- Collector Base Voltage (VCBO) :
- 80V
- Gain Bandwidth Product :
- 50MHz
- Frequency :
- 50MHz
- Polarity/Channel Type :
- NPN
- hFE Min :
- 60
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 1V
- Power Dissipation :
- 1.75W
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- MJD44H11
- Transistor Type :
- NPN
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Height :
- 2.3mm
- Number of Terminations :
- 2
- Datasheets
- MJD44H11TF
,%20SC-63.jpg)
NPN 150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD44H11TF Overview
In this device, the DC current gain is 40 @ 4A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 400mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 8A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
MJD44H11TF Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 50MHz
MJD44H11TF Applications
There are a lot of ON Semiconductor
MJD44H11TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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