MJD44H11T5G
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- Mfr.Part #
- MJD44H11T5G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 80V 8A DPAK
- Stock
- 23,960
- In Stock ：
- 23,960
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 8A
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 85MHz
- Base Part Number :
- MJD44H11
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Terminations :
- 2
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Published :
- 2006
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 1V
- Collector Emitter Breakdown Voltage :
- 80V
- hFE Min :
- 60
- Transition Frequency :
- 85MHz
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lead Free :
- Lead Free
- Frequency :
- 85MHz
- Current Rating :
- 8A
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Number of Pins :
- 3
- Power Dissipation :
- 1.75W
- JESD-609 Code :
- e3
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 1.75W
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 1μA
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 5V
- Voltage - Rated DC :
- 80V
- Polarity/Channel Type :
- NPN
- Halogen Free :
- Halogen Free
- Datasheets
- MJD44H11T5G
NPN -55°C~150°C TJ 1μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD44H11T5G Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 400mA, 8A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 85MHz.A maximum collector current of 8A volts is possible.
MJD44H11T5G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 85MHz
MJD44H11T5G Applications
There are a lot of ON Semiconductor
MJD44H11T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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