MJD44H11T5

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Mfr.Part #
MJD44H11T5
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 80V 8A DPAK
Stock
37,033
In Stock :
37,033

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency :
85MHz
Base Part Number :
MJD44H11
Lead Free :
Lead Free
Published :
2006
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
8 Weeks
Current - Collector Cutoff (Max) :
1μA
RoHS Status :
ROHS3 Compliant
Terminal Form :
Gull wing
Terminal Finish :
Tin (Sn)
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Transistor Type :
NPN
Surface Mount :
yes
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
1V
Collector Emitter Voltage (VCEO) :
80V
Packaging :
Tape and Reel (TR)
Polarity/Channel Type :
NPN
Case Connection :
COLLECTOR
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
Element Configuration :
Single
Current Rating :
8A
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Collector Base Voltage (VCBO) :
5V
Pbfree Code :
yes
hFE Min :
60
Transition Frequency :
85MHz
Halogen Free :
Halogen Free
Max Power Dissipation :
1.75W
Mounting Type :
Surface Mount
Max Collector Current :
8A
Power Dissipation :
1.75W
JESD-30 Code :
R-PSSO-G2
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
2
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pin Count :
3
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Collector Emitter Breakdown Voltage :
80V
JESD-609 Code :
e3
Gain Bandwidth Product :
85MHz
Emitter Base Voltage (VEBO) :
5V
Voltage - Rated DC :
80V
Time@Peak Reflow Temperature-Max (s) :
40
Datasheets
MJD44H11T5
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD44H11T5 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MJD44H11, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, MJD44H11T5 pinout, MJD44H11T5 datasheet PDF, MJD44H11T5 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD44H11T5 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD44H11T5


NPN -55°C~150°C TJ 1μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

MJD44H11T5G Overview


This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 400mA, 8A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 85MHz.A maximum collector current of 8A volts is possible.

MJD44H11T5G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 85MHz


MJD44H11T5G Applications


There are a lot of ON Semiconductor
MJD44H11T5G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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