MJD44H11T4-A
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- Mfr.Part #
- MJD44H11T4-A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 80V 8A DPAK
- Stock
- 54,622
- In Stock ：
- 54,622
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Collector Emitter Breakdown Voltage :
- 80V
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 8A
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Packaging :
- Cut Tape (CT)
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number :
- MJD44
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 80V
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Power Dissipation :
- 20W
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 3
- Configuration :
- Single
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- JEDEC-95 Code :
- TO-252AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 10μA
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 20W
- Polarity/Channel Type :
- NPN
- Datasheets
- MJD44H11T4-A
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NPN 150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount
MJD44H11T4-A Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 4A 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 8A volts at its maximum.
MJD44H11T4-A Features
the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
MJD44H11T4-A Applications
There are a lot of STMicroelectronics
MJD44H11T4-A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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