MJD44E3T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Width :

6.22mm

Current Rating :

10A

Published :

2005

Max Breakdown Voltage :

80V

RoHS Status :

ROHS3 Compliant

Base Part Number :

MJD44

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

NPN

Mounting Type :

Surface Mount

hFE Min :

1000

Max Power Dissipation :

1.75W

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 5A 5V

Length :

6.73mm

Transistor Element Material :

SILICON

Max Collector Current :

10A

Vce Saturation (Max) @ Ib, Ic :

2V @ 20mA, 10A

Radiation Hardening :

No

JESD-609 Code :

e3

Voltage - Rated DC :

80V

JESD-30 Code :

R-PSSO-G2

Halogen Free :

Halogen Free

Current - Collector Cutoff (Max) :

10μA

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Weight :

4.535924g

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Number of Elements :

1

Emitter Base Voltage (VEBO) :

7V

Collector Emitter Breakdown Voltage :

80V

Height :

2.38mm

Pin Count :

3

ECCN Code :

EAR99

Factory Lead Time :

5 Weeks

Transistor Type :

NPN - Darlington

Collector Emitter Saturation Voltage :

1.5V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins :

3

Case Connection :

COLLECTOR

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

80V

Pbfree Code :

yes