MJD42CT4
- Mfr.Part #
- MJD42CT4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PWR PNP 6A 100V DPAK
- Stock
- 1,779
- In Stock :
- 1,779
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 20W
- Transistor Application :
- SWITCHING
- RoHS Status :
- Non-RoHS Compliant
- Terminal Form :
- Gull wing
- Lead Free :
- Contains Lead
- Operating Temperature :
- -65°C~150°C TJ
- Reach Compliance Code :
- not_compliant
- Gain Bandwidth Product :
- 3MHz
- Qualification Status :
- Not Qualified
- Base Part Number :
- MJD42
- JESD-30 Code :
- R-PSSO-G2
- Peak Reflow Temperature (Cel) :
- 240
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Pin Count :
- 3
- Published :
- 2006
- Number of Elements :
- 1
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 100V
- hFE Min :
- 30
- Collector Emitter Breakdown Voltage :
- 100V
- Transition Frequency :
- 3MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Packaging :
- Cut Tape (CT)
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 50μA
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 100V
- Number of Terminations :
- 2
- Max Collector Current :
- 6A
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 1.5V
- Voltage - Rated DC :
- -100V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Current Rating :
- -6A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Max Power Dissipation :
- 1.75W
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Datasheets
- MJD42CT4

PNP -65°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount
MJD42CT4 Overview
This device has a DC current gain of 15 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 600mA, 6A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -6A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 6A volts is possible.
MJD42CT4 Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -6A
a transition frequency of 3MHz
MJD42CT4 Applications
There are a lot of ON Semiconductor
MJD42CT4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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