JAN2N4957UB

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Position :

Dual

RoHS Status :

Non-RoHS Compliant

Gain :

25dB

Transistor Element Material :

SILICON

Terminal Finish :

Gold (Au) - with Nickel (Ni) barrier

Voltage - Collector Emitter Breakdown (Max) :

30V

Mounting Type :

Surface Mount

Transistor Type :

PNP

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

HTS Code :

8541.21.00.95

Noise Figure (dB Typ @ f) :

3.5dB @ 450MHz

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Package / Case :

3-SMD, No Lead

Packaging :

Bulk

Factory Lead Time :

23 Weeks

Reference Standard :

MIL-19500/426

Polarity/Channel Type :

PNP

ECCN Code :

EAR99

Lifecycle Status :

IN PRODUCTION (Last Updated: 6 months ago)

Current - Collector (Ic) (Max) :

30mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-CDSO-N3

Configuration :

Single

Number of Terminations :

3

Additional Feature :

LOW NOISE

Number of Elements :

1

JESD-609 Code :

e4

Surface Mount :

yes

Qualification Status :

Qualified

Collector-Base Capacitance-Max :

0.8pF

Power - Max :

200mW

Published :

2007

Operating Temperature :

-65°C~200°C TJ

Pin Count :

3