JAN2N2857UB

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Published :

2007

Qualification Status :

Qualified

Transistor Type :

NPN

Transistor Element Material :

SILICON

Package / Case :

3-SMD, No Lead

Max Power Dissipation :

200mW

Collector Base Voltage (VCBO) :

30V

Collector-Base Capacitance-Max :

1pF

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

3

Current - Collector (Ic) (Max) :

40mA

Operating Temperature :

-65°C~200°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

40mA

Packaging :

Bulk

Factory Lead Time :

23 Weeks

Noise Figure (dB Typ @ f) :

4.5dB @ 450MHz

Number of Elements :

1

Configuration :

Single

Mounting Type :

Surface Mount

Terminal Position :

Dual

Mount :

Surface Mount

Radiation Hardening :

No

Gain :

21dB

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Polarity/Channel Type :

NPN

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3mA 1V

HTS Code :

8541.21.00.95

Collector Emitter Voltage (VCEO) :

15V

Number of Pins :

3

ECCN Code :

EAR99