IXTN90N25L2
- Mfr.Part #
- IXTN90N25L2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 90A SOT227B
- Stock
- 451
- In Stock :
- 451
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Manufacturer :
- IXYS
- Power Dissipation-Max (Abs) :
- 735 W
- Supplier Device Package :
- SOT-227B
- Terminal Finish :
- Nickel (Ni)
- Type :
- Linear Power MOSFET
- Transistor Polarity :
- N-Channel
- Case Connection :
- Isolated
- Series :
- Linear L2™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Chassis Mount
- Factory Lead Time :
- 28 Weeks
- Power Dissipation-Max :
- 735W Tc
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Mounting Type :
- Chassis Mount
- Drain to Source Breakdown Voltage :
- 250V
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS :
- Details
- Minimum Operating Temperature :
- - 55 C
- Number of Elements :
- 1
- Reach Compliance Code :
- Compliant
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Mounting Style :
- Chassis Mount
- Package Shape :
- RECTANGULAR
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Product :
- Power MOSFET Modules
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Product Type :
- Discrete Semiconductor Modules
- Number of Pins :
- 4
- Gate Charge (Qg) (Max) @ Vgs :
- 640nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Category :
- Discrete Semiconductor Modules
- Drain-source On Resistance-Max :
- 0.033 Ω
- Power Dissipation (Max) :
- 735W (Tc)
- FET Type :
- N-Channel
- Base Product Number :
- IXTN90
- Maximum Operating Temperature :
- + 150 C
- Vgs (Max) :
- ±20V
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Number of Channels :
- 1 Channel
- Number of Terminals :
- 4
- DS Breakdown Voltage-Min :
- 250 V
- Continuous Drain Current (ID) :
- 90A
- Surface Mount :
- No
- Pin Count :
- 4
- Terminal Position :
- UPPER
- Resistance :
- 33mOhm
- Drain to Source Voltage (Vdss) :
- 250V
- Package / Case :
- SOT-227-4, miniBLOC
- Terminal Form :
- UNSPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Packaging :
- Tube
- Polarity/Channel Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 90 A
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Number of Terminations :
- 4
- JESD-30 Code :
- R-PUFM-X4
- Power Dissipation :
- 735W
- FET Feature :
- --
- Pulsed Drain Current-Max (IDM) :
- 360A
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Brand :
- IXYS
- Datasheets
- IXTN90N25L2

N-Channel Tube 33m Ω @ 500mA, 10V ±20V 23000pF @ 25V 640nC @ 10V 250V SOT-227-4, miniBLOC
IXTN90N25L2 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 23000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 90A.When VGS=250V, and ID flows to VDS at 250VVDS, the drain-source breakdown voltage is 250V in this device.As shown in the table below, the drain current of this device is 90 A.There is no pulsed drain current maximum for this device based on its rated peak drain current 360A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTN90N25L2 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 250V voltage
based on its rated peak drain current 360A.
a 250V drain to source voltage (Vdss)
IXTN90N25L2 Applications
There are a lot of IXYS
IXTN90N25L2 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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