IXTN90N25L2

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Mfr.Part #
IXTN90N25L2
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 250V 90A SOT227B
Stock
451
In Stock :
451

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Polarity/Channel Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
250V
FET Type :
N-Channel
RoHS :
Details
Avalanche Energy Rating (Eas) :
3000 mJ
Product Category :
Discrete Semiconductor Modules
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Resistance :
33mOhm
Reach Compliance Code :
Compliant
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Factory Lead Time :
28 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PUFM-X4
Mounting Style :
Chassis Mount
Mount :
Chassis Mount
Packaging :
Tube
DS Breakdown Voltage-Min :
250 V
Power Dissipation :
735W
Lead Free :
Lead Free
Terminal Finish :
Nickel (Ni)
Pulsed Drain Current-Max (IDM) :
360A
Mounting Type :
Chassis Mount
ECCN Code :
EAR99
Package / Case :
SOT-227-4, miniBLOC
Continuous Drain Current (ID) :
90A
Published :
2009
Surface Mount :
No
Series :
Linear L2™
Transistor Application :
SWITCHING
Product Type :
Discrete Semiconductor Modules
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
250V
Number of Pins :
4
Number of Terminations :
4
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Active
Element Configuration :
Single
Pbfree Code :
yes
Brand :
IXYS
Qualification Status :
Not Qualified
Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Case Connection :
Isolated
Terminal Position :
UPPER
Base Product Number :
IXTN90
Power Dissipation-Max (Abs) :
735 W
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
Drain-source On Resistance-Max :
0.033 Ω
Operating Mode :
ENHANCEMENT MODE
Power Dissipation (Max) :
735W (Tc)
Pin Count :
4
Type :
Linear Power MOSFET
Minimum Operating Temperature :
- 55 C
Number of Terminals :
4
Vgs(th) (Max) @ Id :
4.5V @ 3mA
Number of Channels :
1 Channel
Terminal Form :
UNSPECIFIED
Vgs (Max) :
±20V
Maximum Operating Temperature :
+ 150 C
Manufacturer :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
640nC @ 10V
Power Dissipation-Max :
735W Tc
Package :
Tube
Supplier Device Package :
SOT-227B
Drain Current-Max (Abs) (ID) :
90 A
FET Feature :
--
Transistor Element Material :
SILICON
Product :
Power MOSFET Modules
Transistor Polarity :
N-Channel
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTN90N25L2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Package / Case:SOT-227-4, miniBLOC, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Number of Terminations:4, Type:Linear Power MOSFET, Number of Channels:1 Channel, IXTN90N25L2 pinout, IXTN90N25L2 datasheet PDF, IXTN90N25L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTN90N25L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTN90N25L2


N-Channel Tube 33m Ω @ 500mA, 10V ±20V 23000pF @ 25V 640nC @ 10V 250V SOT-227-4, miniBLOC

IXTN90N25L2 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 23000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 90A.When VGS=250V, and ID flows to VDS at 250VVDS, the drain-source breakdown voltage is 250V in this device.As shown in the table below, the drain current of this device is 90 A.There is no pulsed drain current maximum for this device based on its rated peak drain current 360A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTN90N25L2 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 250V voltage
based on its rated peak drain current 360A.
a 250V drain to source voltage (Vdss)


IXTN90N25L2 Applications


There are a lot of IXYS
IXTN90N25L2 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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