IXTN32P60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

11100pF @ 25V

Maximum Operating Temperature :

+ 150 C

Drain-source On Resistance-Max :

0.35Ohm

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

95 ns

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Packaging :

Tube

Factory Lead Time :

28 Weeks

Terminal Finish :

Nickel (Ni)

Base Product Number :

IXTN32

FET Type :

P-Channel

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

350m Ω @ 500mA, 10V

Operating Temperature :

-55°C~150°C TJ

Number of Terminals :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

890W (Tc)

Drain to Source Voltage (Vdss) :

600V

Power Dissipation-Max :

890W Tc

Terminal Position :

UPPER

Published :

2008

Case Connection :

Isolated

Pin Count :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1 Channel

Mount :

Chassis Mount

Reach Compliance Code :

Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Package Shape :

RECTANGULAR

Number of Terminations :

4

JESD-30 Code :

R-PUFM-X4

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 1mA

Brand :

IXYS

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

600 V

Supplier Device Package :

SOT-227B

Rise Time :

27ns

Fall Time (Typ) :

33 ns

Power Dissipation-Max (Abs) :

890 W

Mounting Style :

Chassis Mount

Pulsed Drain Current-Max (IDM) :

96A

Mounting Type :

Chassis Mount

Power Dissipation :

890W

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

IXYS

Polarity/Channel Type :

P-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Product :

Power MOSFET Modules

Continuous Drain Current (ID) :

32A

Package :

Tube

Terminal Form :

UNSPECIFIED

Avalanche Energy Rating (Eas) :

3500 mJ

Gate Charge (Qg) (Max) @ Vgs :

196nC @ 10V

Type :

Polar Power MOSFET

Minimum Operating Temperature :

- 55 C

Number of Elements :

1

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Package / Case :

SOT-227-4, miniBLOC

RoHS :

Details

Drain to Source Breakdown Voltage :

600V

Product Category :

Discrete Semiconductor Modules

Product Type :

Discrete Semiconductor Modules

Product Status :

Active

Transistor Polarity :

P-Channel

Drain Current-Max (Abs) (ID) :

32 A

Series :

PolarP™

FET Feature :

--

Drive Voltage (Max Rds On,Min Rds On) :

10V