IXTN32P60P

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Mfr.Part #
IXTN32P60P
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET P-CH 600V 32A SOT227B
Stock
228
In Stock :
228

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
11100pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
32A
Transistor Polarity :
P-Channel
Turn-Off Delay Time :
95 ns
Package Shape :
RECTANGULAR
DS Breakdown Voltage-Min :
600 V
Power Dissipation-Max :
890W Tc
Manufacturer :
IXYS
Terminal Position :
UPPER
Number of Elements :
1
Pin Count :
4
Reach Compliance Code :
Compliant
Drain to Source Breakdown Voltage :
600V
Product :
Power MOSFET Modules
Pulsed Drain Current-Max (IDM) :
96A
Mounting Style :
Chassis Mount
RoHS Status :
ROHS3 Compliant
Package :
Tube
Rise Time :
27ns
Published :
2008
Surface Mount :
No
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
RoHS :
Details
Gate Charge (Qg) (Max) @ Vgs :
196nC @ 10V
Number of Channels :
1 Channel
Series :
PolarP™
Package / Case :
SOT-227-4, miniBLOC
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain Current-Max (Abs) (ID) :
32 A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Chassis Mount
Power Dissipation :
890W
Power Dissipation-Max (Abs) :
890 W
Transistor Element Material :
SILICON
Power Dissipation (Max) :
890W (Tc)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Qualification Status :
Not Qualified
Brand :
IXYS
Configuration :
SINGLE WITH BUILT-IN DIODE
Product Status :
Active
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
4
Terminal Finish :
Nickel (Ni)
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
JESD-30 Code :
R-PUFM-X4
Type :
Polar Power MOSFET
Fall Time (Typ) :
33 ns
Avalanche Energy Rating (Eas) :
3500 mJ
Minimum Operating Temperature :
- 55 C
FET Feature :
--
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
350m Ω @ 500mA, 10V
Drain to Source Voltage (Vdss) :
600V
Supplier Device Package :
SOT-227B
Drain-source On Resistance-Max :
0.35Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
4
Product Type :
Discrete Semiconductor Modules
Base Product Number :
IXTN32
Terminal Form :
UNSPECIFIED
Factory Lead Time :
28 Weeks
Polarity/Channel Type :
P-Channel
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Maximum Operating Temperature :
+ 150 C
Vgs(th) (Max) @ Id :
4V @ 1mA
FET Type :
P-Channel
Mount :
Chassis Mount
Case Connection :
Isolated
Product Category :
Discrete Semiconductor Modules
Datasheets
IXTN32P60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTN32P60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:SOT-227-4, miniBLOC, Mounting Type:Chassis Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:4, Type:Polar Power MOSFET, IXTN32P60P pinout, IXTN32P60P datasheet PDF, IXTN32P60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTN32P60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTN32P60P


P-Channel Tube 350m Ω @ 500mA, 10V ±20V 11100pF @ 25V 196nC @ 10V 600V SOT-227-4, miniBLOC

IXTN32P60P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 11100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 32 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 95 ns.Peak drain current is 96A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTN32P60P Features


the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 96A.
a 600V drain to source voltage (Vdss)


IXTN32P60P Applications


There are a lot of IXYS
IXTN32P60P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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