IXTN32P60P
- Mfr.Part #
- IXTN32P60P
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET P-CH 600V 32A SOT227B
- Stock
- 228
- In Stock :
- 228
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Brand :
- IXYS
- Surface Mount :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- UNSPECIFIED
- Mounting Type :
- Chassis Mount
- Terminal Finish :
- Nickel (Ni)
- DS Breakdown Voltage-Min :
- 600 V
- Series :
- PolarP™
- Minimum Operating Temperature :
- - 55 C
- Pin Count :
- 4
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- --
- Polarity/Channel Type :
- P-Channel
- Vgs (Max) :
- ±20V
- Maximum Operating Temperature :
- + 150 C
- Pbfree Code :
- yes
- Power Dissipation-Max (Abs) :
- 890 W
- Product Type :
- Discrete Semiconductor Modules
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 95 ns
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 500mA, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Supplier Device Package :
- SOT-227B
- Case Connection :
- Isolated
- Product :
- Power MOSFET Modules
- Power Dissipation-Max :
- 890W Tc
- Type :
- Polar Power MOSFET
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 890W
- Transistor Element Material :
- SILICON
- Package / Case :
- SOT-227-4, miniBLOC
- Product Status :
- Active
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Polarity :
- P-Channel
- Published :
- 2008
- Power Dissipation (Max) :
- 890W (Tc)
- Number of Terminals :
- 4
- Drain Current-Max (Abs) (ID) :
- 32 A
- Product Category :
- Discrete Semiconductor Modules
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Pulsed Drain Current-Max (IDM) :
- 96A
- Base Product Number :
- IXTN32
- Number of Channels :
- 1 Channel
- Fall Time (Typ) :
- 33 ns
- RoHS :
- Details
- Drain-source On Resistance-Max :
- 0.35Ohm
- Reach Compliance Code :
- Compliant
- Factory Lead Time :
- 28 Weeks
- Continuous Drain Current (ID) :
- 32A
- Drain to Source Voltage (Vdss) :
- 600V
- Input Capacitance (Ciss) (Max) @ Vds :
- 11100pF @ 25V
- Qualification Status :
- Not Qualified
- FET Type :
- P-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 196nC @ 10V
- Package :
- Tube
- Manufacturer :
- IXYS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Style :
- Chassis Mount
- Terminal Position :
- UPPER
- Drain to Source Breakdown Voltage :
- 600V
- Mount :
- Chassis Mount
- Rise Time :
- 27ns
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PUFM-X4
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Datasheets
- IXTN32P60P

P-Channel Tube 350m Ω @ 500mA, 10V ±20V 11100pF @ 25V 196nC @ 10V 600V SOT-227-4, miniBLOC
IXTN32P60P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 11100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 32 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 95 ns.Peak drain current is 96A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTN32P60P Features
the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 96A.
a 600V drain to source voltage (Vdss)
IXTN32P60P Applications
There are a lot of IXYS
IXTN32P60P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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