IXTN32P60P

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Mfr.Part #
IXTN32P60P
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET P-CH 600V 32A SOT227B
Stock
228
In Stock :
228

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Brand :
IXYS
Surface Mount :
No
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Form :
UNSPECIFIED
Mounting Type :
Chassis Mount
Terminal Finish :
Nickel (Ni)
DS Breakdown Voltage-Min :
600 V
Series :
PolarP™
Minimum Operating Temperature :
- 55 C
Pin Count :
4
Avalanche Energy Rating (Eas) :
3500 mJ
Number of Terminations :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Feature :
--
Polarity/Channel Type :
P-Channel
Vgs (Max) :
±20V
Maximum Operating Temperature :
+ 150 C
Pbfree Code :
yes
Power Dissipation-Max (Abs) :
890 W
Product Type :
Discrete Semiconductor Modules
Package Shape :
RECTANGULAR
Number of Elements :
1
Turn-Off Delay Time :
95 ns
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Rds On (Max) @ Id, Vgs :
350m Ω @ 500mA, 10V
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Supplier Device Package :
SOT-227B
Case Connection :
Isolated
Product :
Power MOSFET Modules
Power Dissipation-Max :
890W Tc
Type :
Polar Power MOSFET
RoHS Status :
ROHS3 Compliant
Power Dissipation :
890W
Transistor Element Material :
SILICON
Package / Case :
SOT-227-4, miniBLOC
Product Status :
Active
Packaging :
Tube
Operating Mode :
ENHANCEMENT MODE
Transistor Polarity :
P-Channel
Published :
2008
Power Dissipation (Max) :
890W (Tc)
Number of Terminals :
4
Drain Current-Max (Abs) (ID) :
32 A
Product Category :
Discrete Semiconductor Modules
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Pulsed Drain Current-Max (IDM) :
96A
Base Product Number :
IXTN32
Number of Channels :
1 Channel
Fall Time (Typ) :
33 ns
RoHS :
Details
Drain-source On Resistance-Max :
0.35Ohm
Reach Compliance Code :
Compliant
Factory Lead Time :
28 Weeks
Continuous Drain Current (ID) :
32A
Drain to Source Voltage (Vdss) :
600V
Input Capacitance (Ciss) (Max) @ Vds :
11100pF @ 25V
Qualification Status :
Not Qualified
FET Type :
P-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
196nC @ 10V
Package :
Tube
Manufacturer :
IXYS
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Style :
Chassis Mount
Terminal Position :
UPPER
Drain to Source Breakdown Voltage :
600V
Mount :
Chassis Mount
Rise Time :
27ns
Transistor Application :
SWITCHING
JESD-30 Code :
R-PUFM-X4
Vgs(th) (Max) @ Id :
4V @ 1mA
Datasheets
IXTN32P60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTN32P60P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Number of Terminations:4, Operating Temperature:-55°C~150°C TJ, Type:Polar Power MOSFET, Package / Case:SOT-227-4, miniBLOC, Number of Channels:1 Channel, IXTN32P60P pinout, IXTN32P60P datasheet PDF, IXTN32P60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTN32P60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTN32P60P


P-Channel Tube 350m Ω @ 500mA, 10V ±20V 11100pF @ 25V 196nC @ 10V 600V SOT-227-4, miniBLOC

IXTN32P60P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 11100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 32 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 95 ns.Peak drain current is 96A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTN32P60P Features


the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 96A.
a 600V drain to source voltage (Vdss)


IXTN32P60P Applications


There are a lot of IXYS
IXTN32P60P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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