IXTN32P60P
- Mfr.Part #
- IXTN32P60P
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET P-CH 600V 32A SOT227B
- Stock
- 228
- In Stock :
- 228
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 11100pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 32A
- Transistor Polarity :
- P-Channel
- Turn-Off Delay Time :
- 95 ns
- Package Shape :
- RECTANGULAR
- DS Breakdown Voltage-Min :
- 600 V
- Power Dissipation-Max :
- 890W Tc
- Manufacturer :
- IXYS
- Terminal Position :
- UPPER
- Number of Elements :
- 1
- Pin Count :
- 4
- Reach Compliance Code :
- Compliant
- Drain to Source Breakdown Voltage :
- 600V
- Product :
- Power MOSFET Modules
- Pulsed Drain Current-Max (IDM) :
- 96A
- Mounting Style :
- Chassis Mount
- RoHS Status :
- ROHS3 Compliant
- Package :
- Tube
- Rise Time :
- 27ns
- Published :
- 2008
- Surface Mount :
- No
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- RoHS :
- Details
- Gate Charge (Qg) (Max) @ Vgs :
- 196nC @ 10V
- Number of Channels :
- 1 Channel
- Series :
- PolarP™
- Package / Case :
- SOT-227-4, miniBLOC
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain Current-Max (Abs) (ID) :
- 32 A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Chassis Mount
- Power Dissipation :
- 890W
- Power Dissipation-Max (Abs) :
- 890 W
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 890W (Tc)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Qualification Status :
- Not Qualified
- Brand :
- IXYS
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product Status :
- Active
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 4
- Terminal Finish :
- Nickel (Ni)
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PUFM-X4
- Type :
- Polar Power MOSFET
- Fall Time (Typ) :
- 33 ns
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Minimum Operating Temperature :
- - 55 C
- FET Feature :
- --
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 500mA, 10V
- Drain to Source Voltage (Vdss) :
- 600V
- Supplier Device Package :
- SOT-227B
- Drain-source On Resistance-Max :
- 0.35Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 4
- Product Type :
- Discrete Semiconductor Modules
- Base Product Number :
- IXTN32
- Terminal Form :
- UNSPECIFIED
- Factory Lead Time :
- 28 Weeks
- Polarity/Channel Type :
- P-Channel
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Maximum Operating Temperature :
- + 150 C
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- FET Type :
- P-Channel
- Mount :
- Chassis Mount
- Case Connection :
- Isolated
- Product Category :
- Discrete Semiconductor Modules
- Datasheets
- IXTN32P60P

P-Channel Tube 350m Ω @ 500mA, 10V ±20V 11100pF @ 25V 196nC @ 10V 600V SOT-227-4, miniBLOC
IXTN32P60P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 11100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 32 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 95 ns.Peak drain current is 96A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTN32P60P Features
the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 96A.
a 600V drain to source voltage (Vdss)
IXTN32P60P Applications
There are a lot of IXYS
IXTN32P60P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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