IXTN200N10L2
- Mfr.Part #
- IXTN200N10L2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 178A SOT227B
- Stock
- 779
- In Stock :
- 779
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Channel Type :
- N
- Base Product Number :
- IXTN200
- Terminal Form :
- UNSPECIFIED
- Number of Pins :
- 4
- Series :
- Linear L2™
- Continuous Drain Current (ID) :
- 178A
- FET Feature :
- --
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 540nC @ 10V
- Brand :
- IXYS
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Package / Case :
- SOT-227-4, miniBLOC
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Supplier Device Package :
- SOT-227B
- Power Dissipation-Max (Abs) :
- 830 W
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Number of Channels :
- 1 Channel
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 830W Tc
- Product Category :
- Discrete Semiconductor Modules
- Height :
- 9.6mm
- Maximum Operating Temperature :
- +150 °C
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 28 Weeks
- Package :
- Bulk
- Drain Current-Max (Abs) (ID) :
- 178 A
- Package Type :
- SOT-227
- RoHS :
- Details
- FET Type :
- N-Channel
- Terminal Position :
- UPPER
- Number of Elements per Chip :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Packaging :
- Bulk
- Pin Count :
- 4
- Type :
- Linear Power MOSFET
- Power Dissipation :
- 830W
- Manufacturer :
- IXYS
- Mount :
- Chassis Mount
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 100A, 10V
- Minimum Operating Temperature :
- -55 °C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- DS Breakdown Voltage-Min :
- 100 V
- Width :
- 25.07mm
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 178A Tc
- Resistance :
- 11mOhm
- Mounting Style :
- Chassis Mount
- Published :
- 2010
- Drain-source On Resistance-Max :
- 0.011 Ω
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Gate to Source Voltage (Vgs) :
- 20V
- Channel Mode :
- Enhancement
- Mounting Type :
- Chassis Mount
- Product Type :
- Discrete Semiconductor Modules
- Vgs (Max) :
- ±20V
- Package Shape :
- RECTANGULAR
- JESD-30 Code :
- R-PUFM-X4
- Reach Compliance Code :
- Unknown
- Pulsed Drain Current-Max (IDM) :
- 500A
- Power Dissipation (Max) :
- 830W (Tc)
- Terminal Finish :
- Nickel
- Lead Free :
- Lead Free
- Number of Terminations :
- 4
- Number of Terminals :
- 4
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 100V
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Length :
- 38.23mm
- Polarity/Channel Type :
- N-Channel
- Product :
- Power MOSFET Modules
- Drain to Source Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- Isolated
- Pbfree Code :
- yes
- Datasheets
- IXTN200N10L2

N-Channel Bulk 11m Ω @ 100A, 10V ±20V 23000pF @ 25V 540nC @ 10V 100V SOT-227-4, miniBLOC
IXTN200N10L2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 23000pF @ 25V.This device has a continuous drain current (ID) of [178A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A device's drain current is its maximum continuous current, and this device's drain current is 178 A.A maximum pulsed drain current of 500A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTN200N10L2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 178A
a drain-to-source breakdown voltage of 100V voltage
based on its rated peak drain current 500A.
a 100V drain to source voltage (Vdss)
IXTN200N10L2 Applications
There are a lot of IXYS
IXTN200N10L2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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