IXTN200N10L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PUFM-X4

Series :

Linear L2™

Vgs(th) (Max) @ Id :

4.5V @ 3mA

Power Dissipation (Max) :

830W (Tc)

Maximum Operating Temperature :

+150 °C

Drain Current-Max (Abs) (ID) :

178 A

Packaging :

Bulk

Mounting Style :

Chassis Mount

Mount :

Chassis Mount

Avalanche Energy Rating (Eas) :

5000 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

540nC @ 10V

Factory Lead Time :

28 Weeks

Power Dissipation :

830W

Drain to Source Breakdown Voltage :

100V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

178A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Case Connection :

Isolated

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

100 V

Terminal Finish :

Nickel

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.011 Ω

Continuous Drain Current (ID) :

178A

Package :

Bulk

Terminal Position :

UPPER

Reach Compliance Code :

Unknown

Package / Case :

SOT-227-4, miniBLOC

RoHS Status :

ROHS3 Compliant

FET Feature :

--

Surface Mount :

No

Base Product Number :

IXTN200

Pulsed Drain Current-Max (IDM) :

500A

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

Number of Elements per Chip :

1

Minimum Operating Temperature :

-55 °C

Type :

Linear Power MOSFET

Transistor Polarity :

N-Channel

Number of Terminations :

4

Rds On (Max) @ Id, Vgs :

11m Ω @ 100A, 10V

Polarity/Channel Type :

N-Channel

Number of Terminals :

4

Power Dissipation-Max :

830W Tc

Channel Mode :

Enhancement

Vgs (Max) :

±20V

Width :

25.07mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Category :

Discrete Semiconductor Modules

Supplier Device Package :

SOT-227B

Product :

Power MOSFET Modules

Package Type :

SOT-227

Manufacturer :

IXYS

Transistor Element Material :

SILICON

Product Status :

Active

Pin Count :

4

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Resistance :

11mOhm

Mounting Type :

Chassis Mount

RoHS :

Details

Configuration :

SINGLE WITH BUILT-IN DIODE

Length :

38.23mm

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Brand :

IXYS

Published :

2010

Power Dissipation-Max (Abs) :

830 W

Number of Channels :

1 Channel

Channel Type :

N

Drain to Source Voltage (Vdss) :

100V

Height :

9.6mm

Number of Pins :

4

Gate to Source Voltage (Vgs) :

20V

Product Type :

Discrete Semiconductor Modules

Terminal Form :

UNSPECIFIED

ECCN Code :

EAR99