IXTN200N10L2
- Mfr.Part #
- IXTN200N10L2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 178A SOT227B
- Stock
- 779
- In Stock :
- 779
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PUFM-X4
- Height :
- 9.6mm
- Continuous Drain Current (ID) :
- 178A
- Product Category :
- Discrete Semiconductor Modules
- Manufacturer :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Bulk
- Number of Terminations :
- 4
- Channel Mode :
- Enhancement
- Channel Type :
- N
- Drain-source On Resistance-Max :
- 0.011 Ω
- Current - Continuous Drain (Id) @ 25°C :
- 178A Tc
- Transistor Application :
- SWITCHING
- Maximum Operating Temperature :
- +150 °C
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Base Product Number :
- IXTN200
- Vgs (Max) :
- ±20V
- Product Type :
- Discrete Semiconductor Modules
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- Isolated
- Series :
- Linear L2™
- Number of Terminals :
- 4
- Length :
- 38.23mm
- Power Dissipation-Max (Abs) :
- 830 W
- Product Status :
- Active
- Mounting Style :
- Chassis Mount
- Power Dissipation :
- 830W
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Chassis Mount
- Product :
- Power MOSFET Modules
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- 830W (Tc)
- Terminal Finish :
- Nickel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 178 A
- Transistor Polarity :
- N-Channel
- Mounting Type :
- Chassis Mount
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 100A, 10V
- Number of Elements :
- 1
- Package :
- Bulk
- Transistor Element Material :
- SILICON
- Pin Count :
- 4
- Width :
- 25.07mm
- Resistance :
- 11mOhm
- Package / Case :
- SOT-227-4, miniBLOC
- Power Dissipation-Max :
- 830W Tc
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Number of Pins :
- 4
- Reach Compliance Code :
- Unknown
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Type :
- Linear Power MOSFET
- Surface Mount :
- No
- Pulsed Drain Current-Max (IDM) :
- 500A
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 100 V
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- UPPER
- Supplier Device Package :
- SOT-227B
- Gate Charge (Qg) (Max) @ Vgs :
- 540nC @ 10V
- Drain to Source Breakdown Voltage :
- 100V
- Factory Lead Time :
- 28 Weeks
- Brand :
- IXYS
- Published :
- 2010
- Drain to Source Voltage (Vdss) :
- 100V
- FET Type :
- N-Channel
- Package Type :
- SOT-227
- Minimum Operating Temperature :
- -55 °C
- Polarity/Channel Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Terminal Form :
- UNSPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements per Chip :
- 1
- RoHS :
- Details
- Datasheets
- IXTN200N10L2

N-Channel Bulk 11m Ω @ 100A, 10V ±20V 23000pF @ 25V 540nC @ 10V 100V SOT-227-4, miniBLOC
IXTN200N10L2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 23000pF @ 25V.This device has a continuous drain current (ID) of [178A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A device's drain current is its maximum continuous current, and this device's drain current is 178 A.A maximum pulsed drain current of 500A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTN200N10L2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 178A
a drain-to-source breakdown voltage of 100V voltage
based on its rated peak drain current 500A.
a 100V drain to source voltage (Vdss)
IXTN200N10L2 Applications
There are a lot of IXYS
IXTN200N10L2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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