IXTN200N10L2
- Mfr.Part #
- IXTN200N10L2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 178A SOT227B
- Stock
- 779
- In Stock :
- 779
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- UPPER
- Power Dissipation :
- 830W
- Case Connection :
- Isolated
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Polarity/Channel Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package :
- Bulk
- Channel Mode :
- Enhancement
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PUFM-X4
- Resistance :
- 11mOhm
- Base Product Number :
- IXTN200
- Terminal Finish :
- Nickel
- Factory Lead Time :
- 28 Weeks
- Product :
- Power MOSFET Modules
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 100V
- Maximum Operating Temperature :
- +150 °C
- Power Dissipation-Max :
- 830W Tc
- Pulsed Drain Current-Max (IDM) :
- 500A
- Power Dissipation-Max (Abs) :
- 830 W
- Minimum Operating Temperature :
- -55 °C
- Transistor Polarity :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Type :
- SOT-227
- Transistor Element Material :
- SILICON
- Width :
- 25.07mm
- Mounting Type :
- Chassis Mount
- Surface Mount :
- No
- Number of Terminals :
- 4
- Gate Charge (Qg) (Max) @ Vgs :
- 540nC @ 10V
- Continuous Drain Current (ID) :
- 178A
- Product Status :
- Active
- Pin Count :
- 4
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Number of Pins :
- 4
- Drain-source On Resistance-Max :
- 0.011 Ω
- Drain Current-Max (Abs) (ID) :
- 178 A
- Height :
- 9.6mm
- Reach Compliance Code :
- Unknown
- Product Type :
- Discrete Semiconductor Modules
- Channel Type :
- N
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Number of Elements per Chip :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Channels :
- 1 Channel
- Mount :
- Chassis Mount
- DS Breakdown Voltage-Min :
- 100 V
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 100A, 10V
- Product Category :
- Discrete Semiconductor Modules
- ECCN Code :
- EAR99
- Published :
- 2010
- Length :
- 38.23mm
- Mounting Style :
- Chassis Mount
- RoHS :
- Details
- Vgs (Max) :
- ±20V
- Brand :
- IXYS
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- UNSPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 178A Tc
- Supplier Device Package :
- SOT-227B
- Qualification Status :
- Not Qualified
- FET Feature :
- --
- Pbfree Code :
- yes
- Package / Case :
- SOT-227-4, miniBLOC
- Lead Free :
- Lead Free
- Packaging :
- Bulk
- Power Dissipation (Max) :
- 830W (Tc)
- Manufacturer :
- IXYS
- Type :
- Linear Power MOSFET
- Series :
- Linear L2™
- Datasheets
- IXTN200N10L2

N-Channel Bulk 11m Ω @ 100A, 10V ±20V 23000pF @ 25V 540nC @ 10V 100V SOT-227-4, miniBLOC
IXTN200N10L2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 23000pF @ 25V.This device has a continuous drain current (ID) of [178A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A device's drain current is its maximum continuous current, and this device's drain current is 178 A.A maximum pulsed drain current of 500A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTN200N10L2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 178A
a drain-to-source breakdown voltage of 100V voltage
based on its rated peak drain current 500A.
a 100V drain to source voltage (Vdss)
IXTN200N10L2 Applications
There are a lot of IXYS
IXTN200N10L2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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