IXTN200N10L2
- Mfr.Part #
- IXTN200N10L2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 178A SOT227B
- Stock
- 779
- In Stock :
- 779
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- DS Breakdown Voltage-Min :
- 100 V
- Channel Mode :
- Enhancement
- Pbfree Code :
- yes
- Number of Elements per Chip :
- 1
- Pulsed Drain Current-Max (IDM) :
- 500A
- Power Dissipation :
- 830W
- Package Type :
- SOT-227
- Minimum Operating Temperature :
- -55 °C
- Product :
- Power MOSFET Modules
- Base Product Number :
- IXTN200
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Height :
- 9.6mm
- Drain Current-Max (Abs) (ID) :
- 178 A
- Power Dissipation-Max :
- 830W Tc
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- Isolated
- RoHS :
- Details
- Number of Terminations :
- 4
- Number of Terminals :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Power Dissipation (Max) :
- 830W (Tc)
- Length :
- 38.23mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 28 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max (Abs) :
- 830 W
- Gate Charge (Qg) (Max) @ Vgs :
- 540nC @ 10V
- Pin Count :
- 4
- Mount :
- Chassis Mount
- Current - Continuous Drain (Id) @ 25°C :
- 178A Tc
- Product Status :
- Active
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Supplier Device Package :
- SOT-227B
- Manufacturer :
- IXYS
- Drain to Source Voltage (Vdss) :
- 100V
- Width :
- 25.07mm
- Mounting Style :
- Chassis Mount
- Product Category :
- Discrete Semiconductor Modules
- Series :
- Linear L2™
- Terminal Finish :
- Nickel
- FET Feature :
- --
- Continuous Drain Current (ID) :
- 178A
- Package :
- Bulk
- Terminal Position :
- UPPER
- Operating Mode :
- ENHANCEMENT MODE
- Polarity/Channel Type :
- N-Channel
- Maximum Operating Temperature :
- +150 °C
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 100A, 10V
- Transistor Polarity :
- N-Channel
- Brand :
- IXYS
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 4
- Channel Type :
- N
- Resistance :
- 11mOhm
- Product Type :
- Discrete Semiconductor Modules
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Package Shape :
- RECTANGULAR
- JESD-30 Code :
- R-PUFM-X4
- Package / Case :
- SOT-227-4, miniBLOC
- Terminal Form :
- UNSPECIFIED
- Drain-source On Resistance-Max :
- 0.011 Ω
- Type :
- Linear Power MOSFET
- Surface Mount :
- No
- Drain to Source Breakdown Voltage :
- 100V
- Reach Compliance Code :
- Unknown
- Mounting Type :
- Chassis Mount
- Published :
- 2010
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1 Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Datasheets
- IXTN200N10L2
IXTN200N10L2 Documents

N-Channel Bulk 11m Ω @ 100A, 10V ±20V 23000pF @ 25V 540nC @ 10V 100V SOT-227-4, miniBLOC
IXTN200N10L2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 23000pF @ 25V.This device has a continuous drain current (ID) of [178A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A device's drain current is its maximum continuous current, and this device's drain current is 178 A.A maximum pulsed drain current of 500A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTN200N10L2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 178A
a drain-to-source breakdown voltage of 100V voltage
based on its rated peak drain current 500A.
a 100V drain to source voltage (Vdss)
IXTN200N10L2 Applications
There are a lot of IXYS
IXTN200N10L2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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