IXTN200N10L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

JESD-30 Code :

R-PUFM-X4

Height :

9.6mm

Continuous Drain Current (ID) :

178A

Product Category :

Discrete Semiconductor Modules

Manufacturer :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Bulk

Number of Terminations :

4

Channel Mode :

Enhancement

Channel Type :

N

Drain-source On Resistance-Max :

0.011 Ω

Current - Continuous Drain (Id) @ 25°C :

178A Tc

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+150 °C

Avalanche Energy Rating (Eas) :

5000 mJ

Base Product Number :

IXTN200

Vgs (Max) :

±20V

Product Type :

Discrete Semiconductor Modules

Gate to Source Voltage (Vgs) :

20V

Case Connection :

Isolated

Series :

Linear L2™

Number of Terminals :

4

Length :

38.23mm

Power Dissipation-Max (Abs) :

830 W

Product Status :

Active

Mounting Style :

Chassis Mount

Power Dissipation :

830W

Operating Temperature :

-55°C~150°C TJ

Mount :

Chassis Mount

Product :

Power MOSFET Modules

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

830W (Tc)

Terminal Finish :

Nickel

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

178 A

Transistor Polarity :

N-Channel

Mounting Type :

Chassis Mount

Rds On (Max) @ Id, Vgs :

11m Ω @ 100A, 10V

Number of Elements :

1

Package :

Bulk

Transistor Element Material :

SILICON

Pin Count :

4

Width :

25.07mm

Resistance :

11mOhm

Package / Case :

SOT-227-4, miniBLOC

Power Dissipation-Max :

830W Tc

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4.5V @ 3mA

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

Number of Pins :

4

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package Shape :

RECTANGULAR

Type :

Linear Power MOSFET

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

500A

FET Feature :

--

DS Breakdown Voltage-Min :

100 V

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

UPPER

Supplier Device Package :

SOT-227B

Gate Charge (Qg) (Max) @ Vgs :

540nC @ 10V

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

28 Weeks

Brand :

IXYS

Published :

2010

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

Package Type :

SOT-227

Minimum Operating Temperature :

-55 °C

Polarity/Channel Type :

N-Channel

Number of Channels :

1 Channel

Terminal Form :

UNSPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements per Chip :

1

RoHS :

Details