IXTN200N10L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

UNSPECIFIED

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

178A Tc

Number of Elements per Chip :

1

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Base Product Number :

IXTN200

Power Dissipation-Max :

830W Tc

Terminal Position :

UPPER

Drain Current-Max (Abs) (ID) :

178 A

Power Dissipation-Max (Abs) :

830 W

Rds On (Max) @ Id, Vgs :

11m Ω @ 100A, 10V

Transistor Polarity :

N-Channel

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Packaging :

Bulk

Height :

9.6mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2010

Vgs(th) (Max) @ Id :

4.5V @ 3mA

Lead Free :

Lead Free

Continuous Drain Current (ID) :

178A

Maximum Operating Temperature :

+150 °C

Pulsed Drain Current-Max (IDM) :

500A

Package Shape :

RECTANGULAR

Drain-source On Resistance-Max :

0.011 Ω

Brand :

IXYS

Mounting Style :

Chassis Mount

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

28 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminals :

4

Package / Case :

SOT-227-4, miniBLOC

Terminal Finish :

Nickel

Series :

Linear L2™

Product :

Power MOSFET Modules

Width :

25.07mm

Number of Pins :

4

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

Channel Type :

N

Pin Count :

4

Mounting Type :

Chassis Mount

Manufacturer :

IXYS

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PUFM-X4

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

830W

ECCN Code :

EAR99

Number of Elements :

1

Package Type :

SOT-227

Type :

Linear Power MOSFET

Case Connection :

Isolated

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

RoHS :

Details

Package :

Bulk

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supplier Device Package :

SOT-227B

Length :

38.23mm

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

5000 mJ

Resistance :

11mOhm

Mount :

Chassis Mount

Minimum Operating Temperature :

-55 °C

Gate Charge (Qg) (Max) @ Vgs :

540nC @ 10V

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Product Status :

Active

Number of Channels :

1 Channel

Product Type :

Discrete Semiconductor Modules

FET Feature :

--

Product Category :

Discrete Semiconductor Modules

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

100 V

Drain to Source Breakdown Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Channel Mode :

Enhancement

Power Dissipation (Max) :

830W (Tc)

Drain to Source Voltage (Vdss) :

100V