IXTN200N10L2

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Mfr.Part #
IXTN200N10L2
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 100V 178A SOT227B
Stock
779
In Stock :
779

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Channel Type :
N
Base Product Number :
IXTN200
Terminal Form :
UNSPECIFIED
Number of Pins :
4
Series :
Linear L2™
Continuous Drain Current (ID) :
178A
FET Feature :
--
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
540nC @ 10V
Brand :
IXYS
Vgs(th) (Max) @ Id :
4.5V @ 3mA
Package / Case :
SOT-227-4, miniBLOC
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Supplier Device Package :
SOT-227B
Power Dissipation-Max (Abs) :
830 W
Transistor Element Material :
SILICON
Surface Mount :
No
Number of Channels :
1 Channel
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
830W Tc
Product Category :
Discrete Semiconductor Modules
Height :
9.6mm
Maximum Operating Temperature :
+150 °C
RoHS Status :
ROHS3 Compliant
Qualification Status :
Not Qualified
Factory Lead Time :
28 Weeks
Package :
Bulk
Drain Current-Max (Abs) (ID) :
178 A
Package Type :
SOT-227
RoHS :
Details
FET Type :
N-Channel
Terminal Position :
UPPER
Number of Elements per Chip :
1
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
Packaging :
Bulk
Pin Count :
4
Type :
Linear Power MOSFET
Power Dissipation :
830W
Manufacturer :
IXYS
Mount :
Chassis Mount
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
11m Ω @ 100A, 10V
Minimum Operating Temperature :
-55 °C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min :
100 V
Width :
25.07mm
Product Status :
Active
Current - Continuous Drain (Id) @ 25°C :
178A Tc
Resistance :
11mOhm
Mounting Style :
Chassis Mount
Published :
2010
Drain-source On Resistance-Max :
0.011 Ω
Avalanche Energy Rating (Eas) :
5000 mJ
Gate to Source Voltage (Vgs) :
20V
Channel Mode :
Enhancement
Mounting Type :
Chassis Mount
Product Type :
Discrete Semiconductor Modules
Vgs (Max) :
±20V
Package Shape :
RECTANGULAR
JESD-30 Code :
R-PUFM-X4
Reach Compliance Code :
Unknown
Pulsed Drain Current-Max (IDM) :
500A
Power Dissipation (Max) :
830W (Tc)
Terminal Finish :
Nickel
Lead Free :
Lead Free
Number of Terminations :
4
Number of Terminals :
4
Number of Elements :
1
Drain to Source Voltage (Vdss) :
100V
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Configuration :
SINGLE WITH BUILT-IN DIODE
ECCN Code :
EAR99
Length :
38.23mm
Polarity/Channel Type :
N-Channel
Product :
Power MOSFET Modules
Drain to Source Breakdown Voltage :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
Isolated
Pbfree Code :
yes
Datasheets
IXTN200N10L2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTN200N10L2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Package / Case:SOT-227-4, miniBLOC, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Type:Linear Power MOSFET, Mounting Type:Chassis Mount, Number of Terminations:4, IXTN200N10L2 pinout, IXTN200N10L2 datasheet PDF, IXTN200N10L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTN200N10L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTN200N10L2


N-Channel Bulk 11m Ω @ 100A, 10V ±20V 23000pF @ 25V 540nC @ 10V 100V SOT-227-4, miniBLOC

IXTN200N10L2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 23000pF @ 25V.This device has a continuous drain current (ID) of [178A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A device's drain current is its maximum continuous current, and this device's drain current is 178 A.A maximum pulsed drain current of 500A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTN200N10L2 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 178A
a drain-to-source breakdown voltage of 100V voltage
based on its rated peak drain current 500A.
a 100V drain to source voltage (Vdss)


IXTN200N10L2 Applications


There are a lot of IXYS
IXTN200N10L2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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