IXTN170P10P
- Mfr.Part #
- IXTN170P10P
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 170A SOT227B
- Stock
- 223
- In Stock :
- 223
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Factory Lead Time :
- 28 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 170A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Manufacturer :
- IXYS
- Base Product Number :
- IXTN170
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Nickel (Ni)
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Supplier Device Package :
- SOT-227B
- Type :
- Polar Power MOSFET
- Product Type :
- Discrete Semiconductor Modules
- Product :
- Power MOSFET Modules
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Terminal Position :
- UPPER
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Maximum Operating Temperature :
- + 150 C
- Transistor Element Material :
- SILICON
- FET Type :
- P-Channel
- Mounting Style :
- Chassis Mount
- Continuous Drain Current (ID) :
- 170A
- Power Dissipation :
- 890W
- Mounting Type :
- Chassis Mount
- Number of Elements :
- 1
- Product Category :
- Discrete Semiconductor Modules
- Number of Pins :
- 4
- Terminal Form :
- UNSPECIFIED
- FET Feature :
- --
- RoHS :
- Details
- Mount :
- Chassis Mount, Screw
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 12600pF @ 25V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Product Status :
- Active
- Tradename :
- PolarP
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 500mA, 10V
- Drain to Source Voltage (Vdss) :
- 100V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 890W Tc
- Vgs (Max) :
- ±20V
- Brand :
- IXYS
- Package / Case :
- SOT-227-4, miniBLOC
- Number of Terminations :
- 4
- Published :
- 2009
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- Unknown
- Series :
- PolarP™
- Power Dissipation (Max) :
- 890W (Tc)
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Case Connection :
- Isolated
- Minimum Operating Temperature :
- - 55 C
- Pin Count :
- 4
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Radiation Hardening :
- No
- Datasheets
- IXTN170P10P
IXTN170P10P Documents

P-Channel Tube 12m Ω @ 500mA, 10V ±20V 12600pF @ 25V 240nC @ 10V 100V SOT-227-4, miniBLOC
IXTN170P10P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 12600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 170A amps.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTN170P10P Features
the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 170A
a 100V drain to source voltage (Vdss)
IXTN170P10P Applications
There are a lot of IXYS
IXTN170P10P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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