IXTN170P10P
- Mfr.Part #
- IXTN170P10P
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 170A SOT227B
- Stock
- 223
- In Stock :
- 223
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 12600pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- Isolated
- Mount :
- Chassis Mount, Screw
- Maximum Operating Temperature :
- + 150 C
- Supplier Device Package :
- SOT-227B
- Reach Compliance Code :
- Unknown
- Terminal Form :
- UNSPECIFIED
- Manufacturer :
- IXYS
- Mounting Style :
- Chassis Mount
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Number of Terminations :
- 4
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Tradename :
- PolarP
- Current - Continuous Drain (Id) @ 25°C :
- 170A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- PolarP™
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Number of Pins :
- 4
- Drain to Source Voltage (Vdss) :
- 100V
- Product Category :
- Discrete Semiconductor Modules
- Power Dissipation-Max :
- 890W Tc
- Mounting Type :
- Chassis Mount
- Type :
- Polar Power MOSFET
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Product Status :
- Active
- Pin Count :
- 4
- FET Feature :
- --
- RoHS :
- Details
- Base Product Number :
- IXTN170
- Package :
- Tube
- Terminal Finish :
- Nickel (Ni)
- Product Type :
- Discrete Semiconductor Modules
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 500mA, 10V
- Continuous Drain Current (ID) :
- 170A
- Published :
- 2009
- Brand :
- IXYS
- Product :
- Power MOSFET Modules
- Terminal Position :
- UPPER
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 890W (Tc)
- Radiation Hardening :
- No
- Minimum Operating Temperature :
- - 55 C
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Factory Lead Time :
- 28 Weeks
- Power Dissipation :
- 890W
- FET Type :
- P-Channel
- Package / Case :
- SOT-227-4, miniBLOC
- Lead Free :
- Lead Free
- Datasheets
- IXTN170P10P

P-Channel Tube 12m Ω @ 500mA, 10V ±20V 12600pF @ 25V 240nC @ 10V 100V SOT-227-4, miniBLOC
IXTN170P10P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 12600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 170A amps.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTN170P10P Features
the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 170A
a 100V drain to source voltage (Vdss)
IXTN170P10P Applications
There are a lot of IXYS
IXTN170P10P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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