IXTN120P20T
- Mfr.Part #
- IXTN120P20T
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 106A SOT227B
- Stock
- 10
- In Stock :
- 10
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 4
- Terminal Form :
- UNSPECIFIED
- Power Dissipation-Max :
- 830W Tc
- Minimum Operating Temperature :
- - 55 C
- Brand :
- IXYS
- FET Feature :
- --
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Transistor Polarity :
- P-Channel
- Transistor Element Material :
- SILICON
- RoHS :
- Details
- Package :
- Tube
- Number of Channels :
- 1 Channel
- Terminal Position :
- UPPER
- Maximum Operating Temperature :
- + 150 C
- Package / Case :
- SOT-227-4, miniBLOC
- Current - Continuous Drain (Id) @ 25°C :
- 106A Tc
- Manufacturer :
- IXYS
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Series :
- TrenchP™
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 740nC @ 10V
- DS Breakdown Voltage-Min :
- 200V
- Number of Elements :
- 1
- Product Category :
- Discrete Semiconductor Modules
- Case Connection :
- Isolated
- Product Type :
- Discrete Semiconductor Modules
- Base Product Number :
- IXTN120
- Power Dissipation (Max) :
- 830W (Tc)
- Mounting Style :
- Chassis Mount
- Supplier Device Package :
- SOT-227B
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 60A, 10V
- Drain to Source Voltage (Vdss) :
- 200V
- Number of Terminations :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Product Status :
- Active
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Packaging :
- Tube
- JESD-30 Code :
- R-PUFM-X4
- Type :
- Trench
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 400A
- Product :
- Power MOSFET Modules
- FET Type :
- P-Channel
- Vgs (Max) :
- ±15V
- Continuous Drain Current (ID) :
- 106A
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Published :
- 2013
- Input Capacitance (Ciss) (Max) @ Vds :
- 73000pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Mounting Type :
- Chassis Mount
- Mount :
- Chassis Mount
- Drain-source On Resistance-Max :
- 0.03Ohm
- Datasheets
- IXTN120P20T

P-Channel Tube 30m Ω @ 60A, 10V ±15V 73000pF @ 25V 740nC @ 10V 200V SOT-227-4, miniBLOC
IXTN120P20T Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 73000pF @ 25V.This device has a continuous drain current (ID) of [106A], which is its maximum continuous current.A maximum pulsed drain current of 400A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 200V.In order to operate this transistor, a voltage of 200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTN120P20T Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 106A
based on its rated peak drain current 400A.
a 200V drain to source voltage (Vdss)
IXTN120P20T Applications
There are a lot of IXYS
IXTN120P20T applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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