IXTN22N100L

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

22A

Package Type :

SOT-227

Power Dissipation-Max (Abs) :

700 W

Pin Count :

4

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 15V

Terminal Form :

UNSPECIFIED

JESD-30 Code :

R-PUFM-X4

Power Dissipation :

700W

Height :

9.6mm

Pbfree Code :

yes

Vgs (Max) :

±30V

Type :

Linear Power MOSFET

Product Type :

Discrete Semiconductor Modules

Turn On Delay Time :

36 ns

Number of Channels :

1 Channel

Series :

--

Pulsed Drain Current-Max (IDM) :

50A

Base Product Number :

IXTN22

Surface Mount :

No

Package Shape :

RECTANGULAR

Maximum Operating Temperature :

+150 °C

Element Configuration :

Single

RoHS :

Details

Published :

2010

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Terminal Finish :

Nickel (Ni)

Transistor Polarity :

N-Channel

Transistor Element Material :

SILICON

Number of Terminals :

4

Drain to Source Voltage (Vdss) :

1000V

Power Dissipation (Max) :

700W (Tc)

Resistance :

600mOhm

Package :

Tube

Mounting Type :

Chassis Mount

Package / Case :

SOT-227-4, miniBLOC

Number of Terminations :

4

Brand :

IXYS

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Style :

Chassis Mount

Channel Mode :

Enhancement

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Terminal Position :

UPPER

Power Dissipation-Max :

700W Tc

Manufacturer :

IXYS

Additional Feature :

UL RECOGNIZED

DS Breakdown Voltage-Min :

1000 V

Mount :

Chassis Mount, Panel

Product Category :

Discrete Semiconductor Modules

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

50 ns

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Rise Time :

35ns

FET Feature :

--

Number of Pins :

4

Drive Voltage (Max Rds On,Min Rds On) :

20V

Operating Mode :

ENHANCEMENT MODE

Channel Type :

N

Polarity/Channel Type :

N-Channel

Drain-source On Resistance-Max :

0.6 Ω

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

22 A

Minimum Operating Temperature :

-55 °C

Turn-Off Delay Time :

80 ns

Drain to Source Breakdown Voltage :

1kV

Case Connection :

Isolated

Operating Temperature :

-55°C~150°C TJ

Product :

Power MOSFET Modules

Number of Elements per Chip :

1

Rds On (Max) @ Id, Vgs :

600m Ω @ 11A, 20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

1500 mJ

Configuration :

Single

Supplier Device Package :

SOT-227B

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

7050pF @ 25V

Packaging :

Tube

Length :

38.2mm

Width :

25.07mm