IXTN22N100L

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Mfr.Part #
IXTN22N100L
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 1000V 22A SOT227B
Stock
28,368
In Stock :
28,368

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
22A
Package Type :
SOT-227
Power Dissipation-Max (Abs) :
700 W
Pin Count :
4
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 15V
Terminal Form :
UNSPECIFIED
JESD-30 Code :
R-PUFM-X4
Power Dissipation :
700W
Height :
9.6mm
Pbfree Code :
yes
Vgs (Max) :
±30V
Type :
Linear Power MOSFET
Product Type :
Discrete Semiconductor Modules
Turn On Delay Time :
36 ns
Number of Channels :
1 Channel
Series :
--
Pulsed Drain Current-Max (IDM) :
50A
Base Product Number :
IXTN22
Surface Mount :
No
Package Shape :
RECTANGULAR
Maximum Operating Temperature :
+150 °C
Element Configuration :
Single
RoHS :
Details
Published :
2010
Reach Compliance Code :
Compliant
Transistor Application :
SWITCHING
Terminal Finish :
Nickel (Ni)
Transistor Polarity :
N-Channel
Transistor Element Material :
SILICON
Number of Terminals :
4
Drain to Source Voltage (Vdss) :
1000V
Power Dissipation (Max) :
700W (Tc)
Resistance :
600mOhm
Package :
Tube
Mounting Type :
Chassis Mount
Package / Case :
SOT-227-4, miniBLOC
Number of Terminations :
4
Brand :
IXYS
Gate to Source Voltage (Vgs) :
30V
Lead Free :
Lead Free
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Style :
Chassis Mount
Channel Mode :
Enhancement
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Terminal Position :
UPPER
Power Dissipation-Max :
700W Tc
Manufacturer :
IXYS
Additional Feature :
UL RECOGNIZED
DS Breakdown Voltage-Min :
1000 V
Mount :
Chassis Mount, Panel
Product Category :
Discrete Semiconductor Modules
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
50 ns
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Rise Time :
35ns
FET Feature :
--
Number of Pins :
4
Drive Voltage (Max Rds On,Min Rds On) :
20V
Operating Mode :
ENHANCEMENT MODE
Channel Type :
N
Polarity/Channel Type :
N-Channel
Drain-source On Resistance-Max :
0.6 Ω
Number of Elements :
1
Drain Current-Max (Abs) (ID) :
22 A
Minimum Operating Temperature :
-55 °C
Turn-Off Delay Time :
80 ns
Drain to Source Breakdown Voltage :
1kV
Case Connection :
Isolated
Operating Temperature :
-55°C~150°C TJ
Product :
Power MOSFET Modules
Number of Elements per Chip :
1
Rds On (Max) @ Id, Vgs :
600m Ω @ 11A, 20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
1500 mJ
Configuration :
Single
Supplier Device Package :
SOT-227B
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Product Status :
Active
Input Capacitance (Ciss) (Max) @ Vds :
7050pF @ 25V
Packaging :
Tube
Length :
38.2mm
Width :
25.07mm
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTN22N100L from Chip IC,where excellence meets affordability. This product stands out with its Type:Linear Power MOSFET, Number of Channels:1 Channel, Mounting Type:Chassis Mount, Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, IXTN22N100L pinout, IXTN22N100L datasheet PDF, IXTN22N100L amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTN22N100L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTN22N100L


N-Channel Tube 600m Ω @ 11A, 20V ±30V 7050pF @ 25V 270nC @ 15V 1000V SOT-227-4, miniBLOC

IXTN22N100L Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 7050pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 22A.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.As shown in the table below, the drain current of this device is 22 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 80 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 50A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 36 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (20V), this device helps reduce its power consumption.

IXTN22N100L Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)


IXTN22N100L Applications


There are a lot of IXYS
IXTN22N100L applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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