IXTN22N100L

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

RoHS :

Details

Pbfree Code :

yes

Configuration :

Single

Product Category :

Discrete Semiconductor Modules

Continuous Drain Current (ID) :

22A

Reach Compliance Code :

Compliant

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

UNSPECIFIED

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

1000V

Rise Time :

35ns

Lead Free :

Lead Free

Brand :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

SOT-227B

Number of Terminations :

4

Terminal Position :

UPPER

Product :

Power MOSFET Modules

Number of Channels :

1 Channel

Minimum Operating Temperature :

-55 °C

Avalanche Energy Rating (Eas) :

1500 mJ

Type :

Linear Power MOSFET

Power Dissipation-Max (Abs) :

700 W

Length :

38.2mm

Case Connection :

Isolated

Power Dissipation (Max) :

700W (Tc)

Vgs (Max) :

±30V

Package / Case :

SOT-227-4, miniBLOC

Pulsed Drain Current-Max (IDM) :

50A

DS Breakdown Voltage-Min :

1000 V

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Mounting Type :

Chassis Mount

Qualification Status :

Not Qualified

Number of Terminals :

4

Height :

9.6mm

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

Published :

2010

Fall Time (Typ) :

50 ns

Product Status :

Active

Mounting Style :

Chassis Mount

Transistor Polarity :

N-Channel

FET Type :

N-Channel

Series :

--

Drive Voltage (Max Rds On,Min Rds On) :

20V

Maximum Operating Temperature :

+150 °C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Transistor Element Material :

SILICON

Channel Mode :

Enhancement

Drain-source On Resistance-Max :

0.6 Ω

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package :

Tube

Power Dissipation :

700W

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 15V

Drain to Source Breakdown Voltage :

1kV

Resistance :

600mOhm

Pin Count :

4

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

7050pF @ 25V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Base Product Number :

IXTN22

Turn-Off Delay Time :

80 ns

Product Type :

Discrete Semiconductor Modules

Turn On Delay Time :

36 ns

Power Dissipation-Max :

700W Tc

Channel Type :

N

Number of Pins :

4

Package Type :

SOT-227

Additional Feature :

UL RECOGNIZED

Rds On (Max) @ Id, Vgs :

600m Ω @ 11A, 20V

Drain Current-Max (Abs) (ID) :

22 A

Packaging :

Tube

Mount :

Chassis Mount, Panel

Terminal Finish :

Nickel (Ni)

Number of Elements per Chip :

1

JESD-30 Code :

R-PUFM-X4

Width :

25.07mm

Manufacturer :

IXYS