IXTN22N100L

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

Turn On Delay Time :

36 ns

Vgs (Max) :

±30V

Additional Feature :

UL RECOGNIZED

Product Status :

Active

Drain-source On Resistance-Max :

0.6 Ω

RoHS :

Details

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Maximum Operating Temperature :

+150 °C

Manufacturer :

IXYS

RoHS Status :

ROHS3 Compliant

Height :

9.6mm

Length :

38.2mm

Rise Time :

35ns

Product :

Power MOSFET Modules

Fall Time (Typ) :

50 ns

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

7050pF @ 25V

Number of Elements :

1

Minimum Operating Temperature :

-55 °C

Drive Voltage (Max Rds On,Min Rds On) :

20V

Channel Type :

N

Number of Elements per Chip :

1

Terminal Position :

UPPER

Drain to Source Voltage (Vdss) :

1000V

Package :

Tube

Power Dissipation-Max :

700W Tc

Current - Continuous Drain (Id) @ 25°C :

22A Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

50A

Power Dissipation-Max (Abs) :

700 W

Number of Pins :

4

Pbfree Code :

yes

Supplier Device Package :

SOT-227B

Package / Case :

SOT-227-4, miniBLOC

Series :

--

Turn-Off Delay Time :

80 ns

Resistance :

600mOhm

Width :

25.07mm

Mounting Style :

Chassis Mount

Published :

2010

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Terminal Form :

UNSPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 15V

Surface Mount :

No

Reach Compliance Code :

Compliant

Avalanche Energy Rating (Eas) :

1500 mJ

Channel Mode :

Enhancement

Product Type :

Discrete Semiconductor Modules

Base Product Number :

IXTN22

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

4

Packaging :

Tube

Continuous Drain Current (ID) :

22A

Number of Channels :

1 Channel

Mounting Type :

Chassis Mount

Case Connection :

Isolated

Terminal Finish :

Nickel (Ni)

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

600m Ω @ 11A, 20V

Pin Count :

4

Transistor Application :

SWITCHING

Type :

Linear Power MOSFET

Product Category :

Discrete Semiconductor Modules

Package Type :

SOT-227

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

1000 V

FET Feature :

--

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

1kV

Number of Terminals :

4

Qualification Status :

Not Qualified

Mount :

Chassis Mount, Panel

Gate to Source Voltage (Vgs) :

30V

Brand :

IXYS

Transistor Polarity :

N-Channel

JESD-30 Code :

R-PUFM-X4

Power Dissipation :

700W

Element Configuration :

Single

Power Dissipation (Max) :

700W (Tc)

Drain Current-Max (Abs) (ID) :

22 A