IXTN30N100L
- Mfr.Part #
- IXTN30N100L
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 30A SOT227B
- Stock
- 38,006
- In Stock :
- 38,006
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 800W Tc
- Terminal Finish :
- Nickel (Ni)
- Length :
- 38.2 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 450m Ω @ 15A, 20V
- Base Product Number :
- IXTN30
- Mounting Style :
- Chassis Mount
- Pin Count :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 20V
- Product Category :
- Discrete Semiconductor Modules
- Mount :
- Chassis Mount, Screw
- Rise Time :
- 70ns
- Gate Charge (Qg) (Max) @ Vgs :
- 545nC @ 20V
- Number of Pins :
- 4
- Number of Terminals :
- 4
- Pbfree Code :
- yes
- Manufacturer :
- IXYS
- Fall Time (Typ) :
- 78 ns
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Type :
- Linear Power MOSFET
- Mounting Type :
- Chassis Mount
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.45 Ω
- Series :
- --
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Transistor Polarity :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 800W
- Continuous Drain Current (ID) :
- 30A
- Resistance :
- 450mOhm
- Number of Channels :
- 1 Channel
- Drain Current-Max (Abs) (ID) :
- 30 A
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Width :
- 25.07 mm
- Number of Terminations :
- 4
- Reach Compliance Code :
- Compliant
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Maximum Operating Temperature :
- + 150 C
- Published :
- 2010
- Height :
- 9.6 mm
- FET Feature :
- --
- Product Type :
- Discrete Semiconductor Modules
- Product Status :
- Active
- Terminal Form :
- UNSPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Surface Mount :
- No
- Package / Case :
- SOT-227-4, miniBLOC
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 100 ns
- Drain to Source Voltage (Vdss) :
- 1000V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Pulsed Drain Current-Max (IDM) :
- 70A
- Product :
- Power MOSFET Modules
- Package :
- Bulk
- Minimum Operating Temperature :
- - 55 C
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- RoHS :
- Details
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Input Capacitance (Ciss) (Max) @ Vds :
- 13700pF @ 25V
- DS Breakdown Voltage-Min :
- 1000 V
- JESD-30 Code :
- R-PUFM-X4
- Brand :
- IXYS
- Supplier Device Package :
- SOT-227B
- Drain to Source Breakdown Voltage :
- 1kV
- Terminal Position :
- UPPER
- Power Dissipation-Max (Abs) :
- 800 W
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation (Max) :
- 800W (Tc)
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Datasheets
- IXTN30N100L

N-Channel Bulk 450m Ω @ 15A, 20V ±30V 13700pF @ 25V 545nC @ 20V 1000V SOT-227-4, miniBLOC
IXTN30N100L Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 30 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 70A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (20V), this device contributes to a reduction in overall power consumption.
IXTN30N100L Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 70A.
a 1000V drain to source voltage (Vdss)
IXTN30N100L Applications
There are a lot of IXYS
IXTN30N100L applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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