IXTN30N100L

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Mfr.Part #
IXTN30N100L
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 1000V 30A SOT227B
Stock
38,006
In Stock :
38,006

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
800W Tc
Terminal Finish :
Nickel (Ni)
Length :
38.2 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
450m Ω @ 15A, 20V
Base Product Number :
IXTN30
Mounting Style :
Chassis Mount
Pin Count :
4
Drive Voltage (Max Rds On,Min Rds On) :
20V
Product Category :
Discrete Semiconductor Modules
Mount :
Chassis Mount, Screw
Rise Time :
70ns
Gate Charge (Qg) (Max) @ Vgs :
545nC @ 20V
Number of Pins :
4
Number of Terminals :
4
Pbfree Code :
yes
Manufacturer :
IXYS
Fall Time (Typ) :
78 ns
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Element Material :
SILICON
Type :
Linear Power MOSFET
Mounting Type :
Chassis Mount
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.45 Ω
Series :
--
Qualification Status :
Not Qualified
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Transistor Polarity :
N-Channel
Operating Temperature :
-55°C~150°C TJ
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Power Dissipation :
800W
Continuous Drain Current (ID) :
30A
Resistance :
450mOhm
Number of Channels :
1 Channel
Drain Current-Max (Abs) (ID) :
30 A
Radiation Hardening :
No
Packaging :
Bulk
Width :
25.07 mm
Number of Terminations :
4
Reach Compliance Code :
Compliant
Case Connection :
DRAIN
Number of Elements :
1
Maximum Operating Temperature :
+ 150 C
Published :
2010
Height :
9.6 mm
FET Feature :
--
Product Type :
Discrete Semiconductor Modules
Product Status :
Active
Terminal Form :
UNSPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Surface Mount :
No
Package / Case :
SOT-227-4, miniBLOC
Vgs (Max) :
±30V
Turn-Off Delay Time :
100 ns
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Pulsed Drain Current-Max (IDM) :
70A
Product :
Power MOSFET Modules
Package :
Bulk
Minimum Operating Temperature :
- 55 C
Package Shape :
RECTANGULAR
Polarity/Channel Type :
N-Channel
RoHS :
Details
Moisture Sensitivity Level (MSL) :
Not Applicable
Input Capacitance (Ciss) (Max) @ Vds :
13700pF @ 25V
DS Breakdown Voltage-Min :
1000 V
JESD-30 Code :
R-PUFM-X4
Brand :
IXYS
Supplier Device Package :
SOT-227B
Drain to Source Breakdown Voltage :
1kV
Terminal Position :
UPPER
Power Dissipation-Max (Abs) :
800 W
Lead Free :
Lead Free
Gate to Source Voltage (Vgs) :
30V
Power Dissipation (Max) :
800W (Tc)
Avalanche Energy Rating (Eas) :
2000 mJ
Datasheets
IXTN30N100L
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTN30N100L from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Type:Linear Power MOSFET, Mounting Type:Chassis Mount, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:4, Package / Case:SOT-227-4, miniBLOC, IXTN30N100L pinout, IXTN30N100L datasheet PDF, IXTN30N100L amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTN30N100L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTN30N100L


N-Channel Bulk 450m Ω @ 15A, 20V ±30V 13700pF @ 25V 545nC @ 20V 1000V SOT-227-4, miniBLOC

IXTN30N100L Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 30 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 70A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (20V), this device contributes to a reduction in overall power consumption.

IXTN30N100L Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 70A.
a 1000V drain to source voltage (Vdss)


IXTN30N100L Applications


There are a lot of IXYS
IXTN30N100L applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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