IXTN110N20L2
- Mfr.Part #
- IXTN110N20L2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 100A SOT227B
- Stock
- 35,237
- In Stock :
- 35,237
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Details
- Manufacturer :
- IXYS
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Brand :
- IXYS
- Number of Terminations :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 55A, 10V
- Power Dissipation-Max :
- 735W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Factory Lead Time :
- 28 Weeks
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Published :
- 2009
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Nickel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 38.23 mm
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Pin Count :
- 4
- Package :
- Tube
- Package / Case :
- SOT-227-4, miniBLOC
- Mounting Style :
- Chassis Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 500nC @ 10V
- FET Type :
- N-Channel
- Type :
- Linear Power MOSFET
- Terminal Form :
- UNSPECIFIED
- Mounting Type :
- Chassis Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 12.22 mm
- Width :
- 25.42 mm
- Number of Pins :
- 4
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Minimum Operating Temperature :
- - 55 C
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Channels :
- 1 Channel
- Product Category :
- Discrete Semiconductor Modules
- Continuous Drain Current (ID) :
- 100A
- Base Product Number :
- IXTN110
- Maximum Operating Temperature :
- + 150 C
- Tradename :
- Linear L2
- Product :
- Power MOSFET Modules
- Mount :
- Chassis Mount, Screw
- Case Connection :
- Isolated
- Supplier Device Package :
- SOT-227B
- Drain to Source Voltage (Vdss) :
- 200V
- DS Breakdown Voltage-Min :
- 200V
- Power Dissipation (Max) :
- 735W (Tc)
- Series :
- Linear L2™
- ECCN Code :
- EAR99
- Terminal Position :
- UPPER
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Feature :
- --
- Transistor Polarity :
- N-Channel
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 275A
- Product Type :
- Discrete Semiconductor Modules
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Rise Time :
- 100 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Power Dissipation :
- 735W
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Vgs (Max) :
- ±20V
- Product Status :
- Active
- Datasheets
- IXTN110N20L2

N-Channel Tube 24m Ω @ 55A, 10V ±20V 23000pF @ 25V 500nC @ 10V 200V SOT-227-4, miniBLOC
IXTN110N20L2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 23000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 275A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTN110N20L2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 275A.
a 200V drain to source voltage (Vdss)
IXTN110N20L2 Applications
There are a lot of IXYS
IXTN110N20L2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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