IXTN110N20L2

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Mfr.Part #
IXTN110N20L2
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 200V 100A SOT227B
Stock
35,237
In Stock :
35,237

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
500nC @ 10V
RoHS Status :
ROHS3 Compliant
Supplier Device Package :
SOT-227B
Packaging :
Tube
Power Dissipation-Max :
735W Tc
Product Status :
Active
Manufacturer :
IXYS
Number of Elements :
1
Tradename :
Linear L2
Terminal Position :
UPPER
FET Type :
N-Channel
Height :
12.22 mm
DS Breakdown Voltage-Min :
200V
Number of Channels :
1 Channel
Pin Count :
4
Transistor Element Material :
SILICON
Product :
Power MOSFET Modules
Rds On (Max) @ Id, Vgs :
24m Ω @ 55A, 10V
Number of Pins :
4
Case Connection :
Isolated
Package :
Tube
Power Dissipation (Max) :
735W (Tc)
Published :
2009
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Continuous Drain Current (ID) :
100A
Terminal Finish :
Nickel
Transistor Polarity :
N-Channel
Vgs(th) (Max) @ Id :
4.5V @ 3mA
Series :
Linear L2™
Number of Terminations :
4
Avalanche Energy Rating (Eas) :
5000 mJ
Mount :
Chassis Mount, Screw
RoHS :
Details
Transistor Application :
SWITCHING
Maximum Operating Temperature :
+ 150 C
Terminal Form :
UNSPECIFIED
Reach Compliance Code :
Unknown
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Power Dissipation :
735W
Width :
25.42 mm
Mounting Style :
Chassis Mount
Length :
38.23 mm
Configuration :
SINGLE WITH BUILT-IN DIODE
Factory Lead Time :
28 Weeks
Drain to Source Voltage (Vdss) :
200V
FET Feature :
--
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Chassis Mount
Base Product Number :
IXTN110
Brand :
IXYS
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
SOT-227-4, miniBLOC
Type :
Linear Power MOSFET
Minimum Operating Temperature :
- 55 C
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Product Type :
Discrete Semiconductor Modules
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
Product Category :
Discrete Semiconductor Modules
Rise Time :
100 ns
Pulsed Drain Current-Max (IDM) :
275A
Datasheets
IXTN110N20L2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTN110N20L2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Pins:4, Number of Terminations:4, Operating Temperature:-55°C~150°C TJ, Mounting Type:Chassis Mount, Package / Case:SOT-227-4, miniBLOC, Type:Linear Power MOSFET, IXTN110N20L2 pinout, IXTN110N20L2 datasheet PDF, IXTN110N20L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTN110N20L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTN110N20L2


N-Channel Tube 24m Ω @ 55A, 10V ±20V 23000pF @ 25V 500nC @ 10V 200V SOT-227-4, miniBLOC

IXTN110N20L2 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 23000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 275A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTN110N20L2 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 275A.
a 200V drain to source voltage (Vdss)


IXTN110N20L2 Applications


There are a lot of IXYS
IXTN110N20L2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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