IXTN60N50L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Base Product Number :

IXTN60

Power Dissipation-Max (Abs) :

735 W

Reach Compliance Code :

Compliant

Nominal Vgs :

2.5 V

Number of Terminals :

4

RoHS :

Details

Drain Current-Max (Abs) (ID) :

30A

Packaging :

Tube

Terminal Form :

UNSPECIFIED

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Package :

Tube

Terminal Position :

UPPER

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

610nC @ 10V

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Maximum Operating Temperature :

+ 150 C

Mounting Style :

Chassis Mount

Product Type :

Discrete Semiconductor Modules

Product Status :

Active

Lead Free :

Lead Free

Supplier Device Package :

SOT-227B

Power Dissipation-Max :

735W Tc

Package / Case :

SOT-227-4, miniBLOC

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

735W (Tc)

Length :

38.23 mm

Series :

Linear L2™

Type :

Linear Power MOSFET

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Mounting Type :

Chassis Mount

Additional Feature :

UL RECOGNIZED

Terminal Finish :

Nickel (Ni)

DS Breakdown Voltage-Min :

500V

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Threshold Voltage :

2.5V

Manufacturer :

IXYS

Width :

25.42 mm

Avalanche Energy Rating (Eas) :

3000 mJ

Tradename :

Linear L2

Power Dissipation :

735W

Product Category :

Discrete Semiconductor Modules

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

28 Weeks

Operating Mode :

ENHANCEMENT MODE

FET Feature :

--

Height :

12.22 mm

Rise Time :

40 ns

JESD-30 Code :

R-PUFM-X4

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Number of Pins :

4

Package Shape :

RECTANGULAR

Mount :

Chassis Mount

Published :

2009

Rds On (Max) @ Id, Vgs :

100m Ω @ 30A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

24000pF @ 25V

Transistor Application :

SWITCHING

Surface Mount :

No

Transistor Polarity :

N-Channel

Number of Terminations :

4

Pulsed Drain Current-Max (IDM) :

150A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product :

Power MOSFET Modules

Continuous Drain Current (ID) :

53A

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.1Ohm

Pin Count :

4

Case Connection :

Isolated

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

500V

ECCN Code :

EAR99

Brand :

IXYS