IXTN600N04T2
- Mfr.Part #
- IXTN600N04T2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 600A SOT227B
- Stock
- 209
- In Stock :
- 209
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Chassis Mount, Screw
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Chassis Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Base Product Number :
- IXTN600
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Nickel
- Type :
- Trench
- Turn On Delay Time :
- 40 ns
- Mounting Style :
- Chassis Mount
- Transistor Polarity :
- N-Channel
- Number of Outputs :
- 1
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Reach Compliance Code :
- Unknown
- Rds On (Max) @ Id, Vgs :
- 1.05m Ω @ 100A, 10V
- Maximum Operating Temperature :
- + 175 C
- RoHS Status :
- ROHS3 Compliant
- Series :
- GigaMOS™, TrenchT2™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- Drain to Source Voltage (Vdss) :
- 40V
- Radiation Hardening :
- No
- Tradename :
- HiPerFET
- Fall Time (Typ) :
- 250 ns
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 40000pF @ 25V
- Pin Count :
- 4
- Power Dissipation :
- 940W
- Nominal Supply Current :
- 200A
- Continuous Drain Current (ID) :
- 600A
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 4
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Product :
- Power MOSFET Modules
- Output Voltage :
- 40V
- Minimum Operating Temperature :
- - 55 C
- RoHS :
- Details
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 600A Tc
- Rise Time :
- 20ns
- Number of Pins :
- 4
- Additional Feature :
- UL RECOGNIZED, AVALANCHE RATED
- Case Connection :
- Isolated
- Power Dissipation (Max) :
- 940W (Tc)
- FET Feature :
- --
- Supplier Device Package :
- SOT-227B
- Product Status :
- Active
- Power Dissipation-Max :
- 940W Tc
- Transistor Application :
- SWITCHING
- Published :
- 2012
- Package / Case :
- SOT-227-4, miniBLOC
- Brand :
- IXYS
- Product Category :
- Discrete Semiconductor Modules
- Output Current :
- 600A
- Turn-Off Delay Time :
- 90 ns
- Manufacturer :
- IXYS
- Lead Free :
- Lead Free
- Terminal Position :
- UPPER
- Factory Lead Time :
- 28 Weeks
- Product Type :
- Discrete Semiconductor Modules
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Terminal Form :
- UNSPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 590nC @ 10V
- Datasheets
- IXTN600N04T2

N-Channel Tube 1.05m Ω @ 100A, 10V ±20V 40000pF @ 25V 590nC @ 10V 40V SOT-227-4, miniBLOC
IXTN600N04T2 Description
IXTN600N04T2 is a 40V TrenchT2™ GigaMOS™ Power MOSFET. A power MOSFET is a specific metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to the degree that the gate voltage needs to be higher than the voltage under control.
IXTN600N04T2 Features
International Standard Package
miniBLOC, with Aluminium Nitride Isolation
175°C Operating Temperature
Isolation Voltage 2500 V~ z High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
IXTN600N04T2 Applications
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High-Speed Power Switching Applications
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