IXTN550N055T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

45 ns

Mounting Type :

Chassis Mount

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

90 ns

Rds On (Max) @ Id, Vgs :

1.3m Ω @ 100A, 10V

Package / Case :

SOT-227-4, miniBLOC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power (max) P(TOT) :

940W

Product Status :

Active

Supplier Device Package :

SOT-227B

Manufacturer :

IXYS

Channels :

1

Output Current :

550A

Case Connection :

Isolated

Product Category :

Discrete Semiconductor Modules

Transistor Polarity :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation (Max) :

940W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

--

Vgs (Max) :

±20V

Maximum Operating Temperature :

+ 175 C

Input Capacitance (Ciss) (Max) @ Vds :

40000pF @ 25V

Tradename :

HiPerFET

Drain Current-Max (Abs) (ID) :

550 A

Number of Elements :

1

Brand :

IXYS

Transistor Element Material :

SILICON

Nominal Supply Current :

200A

Rise Time :

40ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

ECCN Code :

EAR99

Terminal Form :

UNSPECIFIED

Power Dissipation-Max :

940W Tc

Type :

N-Channel

Factory Lead Time :

17 Weeks

Current - Continuous Drain (Id) @ 25°C :

550A Tc

Gate Charge (Qg) (Max) @ Vgs :

595nC @ 10V

Fall Time (Typ) :

230 ns

Number of Drivers :

1

Continuous Drain Current (ID) :

550A

Package Shape :

RECTANGULAR

Reach Compliance Code :

not_compliant

Mount :

Chassis Mount

DS Breakdown Voltage-Min :

55 V

Base Product Number :

IXTN550

Polarity/Channel Type :

N-Channel

Number of Terminals :

4

Max. operating temperature :

+175°C

Pin Count :

4

Number of Channels :

1 Channel

Drain-source On Resistance-Max :

0.0013 Ω

FET Type :

N-Channel

Qualification Status :

Not Qualified

RoHS :

Details

Mounting Style :

Chassis Mount

Power Dissipation-Max (Abs) :

940 W

Product Type :

Discrete Semiconductor Modules

Pulsed Drain Current-Max (IDM) :

1650 A

Pbfree Code :

yes

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Enclosure :

SOT 227B

Packaging :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

3000 mJ

Terminal Position :

UPPER

Manuf. code :

IXY

Minimum Operating Temperature :

- 55 C

Published :

2009

Number of Terminations :

4

Product :

Power MOSFET Modules

Transistor Application :

SWITCHING

Terminal Finish :

Nickel (Ni)

Package :

Tube

Output Voltage :

55V

Series :

GigaMOS™, TrenchT2™

Content :

1pc(s)

JESD-30 Code :

R-PUFM-X4