IXTN40P50P
- Mfr.Part #
- IXTN40P50P
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 40A SOT227B
- Stock
- 42,826
- In Stock :
- 42,826
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Chassis Mount
- Drain to Source Voltage (Vdss) :
- 500V
- Operating Mode :
- ENHANCEMENT MODE
- Package :
- Tube
- Mounting Style :
- Chassis Mount
- Product Category :
- Discrete Semiconductor Modules
- Pulsed Drain Current-Max (IDM) :
- 120A
- Power Dissipation (Max) :
- 890W (Tc)
- FET Type :
- P-Channel
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Base Product Number :
- IXTN40
- Pin Count :
- 4
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Brand :
- IXYS
- FET Feature :
- --
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Qualification Status :
- Not Qualified
- DS Breakdown Voltage-Min :
- 500 V
- Polarity/Channel Type :
- P-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 40A
- Lead Free :
- Lead Free
- Terminal Position :
- UPPER
- RoHS :
- Details
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Vgs (Max) :
- ±20V
- Package Shape :
- RECTANGULAR
- Type :
- Polar Power MOSFET
- Product Type :
- Discrete Semiconductor Modules
- Series :
- PolarP™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 500mA, 10V
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Unknown
- Power Dissipation-Max :
- 890W Tc
- Power Dissipation :
- 890W
- Surface Mount :
- No
- Minimum Operating Temperature :
- - 55 C
- Number of Terminations :
- 4
- Number of Channels :
- 1 Channel
- Maximum Operating Temperature :
- + 150 C
- Pbfree Code :
- yes
- Supplier Device Package :
- SOT-227B
- Product :
- Power MOSFET Modules
- Drain-source On Resistance-Max :
- 0.23Ohm
- Factory Lead Time :
- 28 Weeks
- Number of Terminals :
- 4
- JESD-30 Code :
- R-PUFM-X4
- Input Capacitance (Ciss) (Max) @ Vds :
- 11500pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- UNSPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 205nC @ 10V
- Transistor Polarity :
- P-Channel
- Configuration :
- Single
- Rise Time :
- 59 ns
- Package / Case :
- SOT-227-4, miniBLOC
- Power Dissipation-Max (Abs) :
- 890 W
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 40 A
- Packaging :
- Tube
- Element Configuration :
- Single
- Published :
- 2013
- Manufacturer :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Type :
- Chassis Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- Isolated
- Terminal Finish :
- Nickel
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- -500V
- Product Status :
- Active
- Datasheets
- IXTN40P50P

P-Channel Tube 230m Ω @ 500mA, 10V ±20V 11500pF @ 25V 205nC @ 10V 500V SOT-227-4, miniBLOC
IXTN40P50P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3500 mJ.A device's maximum input capacitance is 11500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 40A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-500V, and this device has a drain-to-source breakdown voltage of -500V voltage.Its drain current is 40 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 120A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTN40P50P Features
the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of -500V voltage
based on its rated peak drain current 120A.
a 500V drain to source voltage (Vdss)
IXTN40P50P Applications
There are a lot of IXYS
IXTN40P50P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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