IXTN40P50P

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Mfr.Part #
IXTN40P50P
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET P-CH 500V 40A SOT227B
Stock
42,826
In Stock :
42,826

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Chassis Mount
Drain to Source Voltage (Vdss) :
500V
Operating Mode :
ENHANCEMENT MODE
Package :
Tube
Mounting Style :
Chassis Mount
Product Category :
Discrete Semiconductor Modules
Pulsed Drain Current-Max (IDM) :
120A
Power Dissipation (Max) :
890W (Tc)
FET Type :
P-Channel
Avalanche Energy Rating (Eas) :
3500 mJ
Base Product Number :
IXTN40
Pin Count :
4
Vgs(th) (Max) @ Id :
4V @ 1mA
Brand :
IXYS
FET Feature :
--
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Qualification Status :
Not Qualified
DS Breakdown Voltage-Min :
500 V
Polarity/Channel Type :
P-Channel
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
40A
Lead Free :
Lead Free
Terminal Position :
UPPER
RoHS :
Details
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Vgs (Max) :
±20V
Package Shape :
RECTANGULAR
Type :
Polar Power MOSFET
Product Type :
Discrete Semiconductor Modules
Series :
PolarP™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
230m Ω @ 500mA, 10V
Transistor Element Material :
SILICON
Reach Compliance Code :
Unknown
Power Dissipation-Max :
890W Tc
Power Dissipation :
890W
Surface Mount :
No
Minimum Operating Temperature :
- 55 C
Number of Terminations :
4
Number of Channels :
1 Channel
Maximum Operating Temperature :
+ 150 C
Pbfree Code :
yes
Supplier Device Package :
SOT-227B
Product :
Power MOSFET Modules
Drain-source On Resistance-Max :
0.23Ohm
Factory Lead Time :
28 Weeks
Number of Terminals :
4
JESD-30 Code :
R-PUFM-X4
Input Capacitance (Ciss) (Max) @ Vds :
11500pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
20V
Terminal Form :
UNSPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
205nC @ 10V
Transistor Polarity :
P-Channel
Configuration :
Single
Rise Time :
59 ns
Package / Case :
SOT-227-4, miniBLOC
Power Dissipation-Max (Abs) :
890 W
Number of Elements :
1
Drain Current-Max (Abs) (ID) :
40 A
Packaging :
Tube
Element Configuration :
Single
Published :
2013
Manufacturer :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Type :
Chassis Mount
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
Isolated
Terminal Finish :
Nickel
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
-500V
Product Status :
Active
Datasheets
IXTN40P50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTN40P50P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Type:Polar Power MOSFET, Number of Terminations:4, Number of Channels:1 Channel, Package / Case:SOT-227-4, miniBLOC, Mounting Type:Chassis Mount, IXTN40P50P pinout, IXTN40P50P datasheet PDF, IXTN40P50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTN40P50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTN40P50P


P-Channel Tube 230m Ω @ 500mA, 10V ±20V 11500pF @ 25V 205nC @ 10V 500V SOT-227-4, miniBLOC

IXTN40P50P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3500 mJ.A device's maximum input capacitance is 11500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 40A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-500V, and this device has a drain-to-source breakdown voltage of -500V voltage.Its drain current is 40 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 120A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTN40P50P Features


the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of -500V voltage
based on its rated peak drain current 120A.
a 500V drain to source voltage (Vdss)


IXTN40P50P Applications


There are a lot of IXYS
IXTN40P50P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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