IXTH96N20P
- Mfr.Part #
- IXTH96N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 96A TO247
- Stock
- 53
- In Stock :
- 53
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSFM-T3
- Length :
- 16.26 mm
- Mounting Style :
- Through Hole
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Turn-Off Delay Time :
- 75 ns
- Number of Terminals :
- 3
- Package Shape :
- RECTANGULAR
- Channel Mode :
- Enhancement
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- REACH SVHC :
- No SVHC
- Qualification Status :
- Not Qualified
- Product Type :
- MOSFET
- Terminal Position :
- Single
- Product Category :
- MOSFET
- Mounting Type :
- Through Hole
- MSL :
- -
- Power Dissipation (Max) :
- 600W (Tc)
- FET Feature :
- --
- Channel Type :
- N Channel
- Height :
- 21.46 mm
- Additional Feature :
- AVALANCHE RATED
- Type :
- PolarHT Power MOSFET
- Rise Time :
- 30ns
- FET Type :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Maximum Operating Temperature :
- + 175 C
- Manufacturer :
- IXYS
- JEDEC-95 Code :
- TO-247AD
- Qualification :
- -
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 200V
- Series :
- PolarHT™
- Continuous Drain Current Id :
- 96A
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 225A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.024 Ω
- Factory Lead Time :
- 28 Weeks
- Number of Channels :
- 1 Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- THROUGH-HOLE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Resistance :
- 24mOhm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package :
- Tube
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 96A
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 600W
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-247-3
- Base Product Number :
- IXTH96
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Fall Time (Typ) :
- 30 ns
- Reach Compliance Code :
- Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 96A Tc
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-247 (IXTH)
- Power Dissipation-Max :
- 600W Tc
- JESD-609 Code :
- e1
- Threshold Voltage :
- 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Number of Terminations :
- 3
- Width :
- 5.3 mm
- Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 500mA, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Brand :
- IXYS
- Drain to Source Breakdown Voltage :
- 200V
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 200 V
- Element Configuration :
- Single
- Subcategory :
- MOSFETs
- Published :
- 2006
- RoHS :
- Details
- Transistor Polarity :
- N-Channel
- Pin Count :
- 3
- Tradename :
- PolarHT
- Transistor Type :
- 1 N-Channel
- Product Status :
- Active
- Datasheets
- IXTH96N20P
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N-Channel Tube 24m Ω @ 500mA, 10V ±20V 4800pF @ 25V 145nC @ 10V 200V TO-247-3
IXTH96N20P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 4800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 96A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 225A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 200 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTH96N20P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 225A.
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)
IXTH96N20P Applications
There are a lot of IXYS
IXTH96N20P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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