IXTH02N250

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Type :

Through Hole

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Width :

5.3 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

3

Number of Terminals :

3

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

116pF @ 25V

Height :

21.46 mm

Number of Elements :

1

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Mounting Style :

Through Hole

Product Category :

MOSFET

Type :

High Voltage Power MOSFET

Base Product Number :

IXTH02

Continuous Drain Current (ID) :

200mA

Supplier Device Package :

TO-247 (IXTH)

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Minimum Operating Temperature :

- 55 C

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Lead Free

Brand :

IXYS

Polarity/Channel Type :

N-Channel

Pbfree Code :

yes

Transistor Polarity :

N-Channel

Reach Compliance Code :

Compliant

Rise Time :

19 ns

Published :

2012

Case Connection :

DRAIN

Length :

16.26 mm

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-247

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

28 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

450 Ω @ 50mA, 10V

Drain to Source Voltage (Vdss) :

2500V

Power Dissipation-Max :

83W Tc

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

57 W

RoHS Status :

ROHS3 Compliant

Power Dissipation (Max) :

83W (Tc)

Terminal Form :

THROUGH-HOLE

Series :

--

Vgs (Max) :

±20V

Channel Mode :

Enhancement

Number of Channels :

1 Channel

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

200mA Tc

Pulsed Drain Current-Max (IDM) :

0.5A

Qualification Status :

Not Qualified

Manufacturer :

IXYS

Mount :

Through Hole

Product Status :

Active

DS Breakdown Voltage-Min :

2500V

RoHS :

Details

Maximum Operating Temperature :

+ 150 C

Package :

Tube

Drain-source On Resistance-Max :

450 Ω

Package Shape :

RECTANGULAR

Product Type :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

7.4nC @ 10V

Pin Count :

3

FET Feature :

--

Drain Current-Max (Abs) (ID) :

0.2A