IXTH10N100D2
- Mfr.Part #
- IXTH10N100D2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 10A TO247
- Stock
- 19,978
- In Stock :
- 19,978
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 1.5 Ω
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Channels :
- 1 Channel
- Surface Mount :
- No
- Power Dissipation-Max :
- 695W Tc
- Terminal Position :
- Single
- Manufacturer :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 5V
- FET Type :
- N-Channel
- Published :
- 2011
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 1000V
- Channel Mode :
- Depletion
- Terminal Form :
- THROUGH-HOLE
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminals :
- 3
- Number of Terminations :
- 3
- Package / Case :
- TO-247-3
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 24 Weeks
- Maximum Operating Temperature :
- + 150 C
- Transistor Type :
- 1 N-Channel
- Supplier Device Package :
- TO-247
- JEDEC-95 Code :
- TO-247
- Base Product Number :
- IXTH10
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Product Type :
- MOSFET
- Polarity/Channel Type :
- N-Channel
- Mount :
- Through Hole
- Transistor Polarity :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 5A, 10V
- Vgs(th) (Max) @ Id :
- --
- RoHS :
- Details
- Rise Time :
- 36 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- --
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Product Status :
- Active
- FET Feature :
- Depletion Mode
- Vgs (Max) :
- ±20V
- Product Category :
- MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Minimum Operating Temperature :
- - 55 C
- Pin Count :
- 3
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Compliant
- Power Dissipation (Max) :
- 695W (Tc)
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- DS Breakdown Voltage-Min :
- 1000V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Mounting Style :
- Through Hole
- Power Dissipation-Max (Abs) :
- 695 W
- Continuous Drain Current (ID) :
- 10A
- Input Capacitance (Ciss) (Max) @ Vds :
- 5320pF @ 25V
- Datasheets
- IXTH10N100D2
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N-Channel Tube 1.5 Ω @ 5A, 10V ±20V 5320pF @ 25V 200nC @ 5V 1000V TO-247-3
IXTH10N100D2 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5320pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).Normal operation requires that the DS breakdown voltage remain above 1000V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTH10N100D2 Features
a continuous drain current (ID) of 10A
a 1000V drain to source voltage (Vdss)
IXTH10N100D2 Applications
There are a lot of IXYS
IXTH10N100D2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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