IXTH10P50P

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Mfr.Part #
IXTH10P50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET P-CH 500V 10A TO247
Stock
45
In Stock :
45

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Number of Channels :
1 Channel
Maximum Operating Temperature :
+ 150 C
Supplier Device Package :
TO-247 (IXTH)
FET Feature :
--
Minimum Operating Temperature :
- 55 C
Pin Count :
3
Vgs (Max) :
±20V
Manufacturer :
IXYS
Lead Free :
Lead Free
Height :
21.45 mm
Element Configuration :
Single
RoHS :
Details
Rise Time :
28ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Factory Lead Time :
28 Weeks
Drain to Source Voltage (Vdss) :
500V
Fall Time (Typ) :
44 ns
Operating Temperature :
-55°C~150°C TJ
Product Type :
MOSFET
Gate to Source Voltage (Vgs) :
20V
Transistor Type :
1 P-Channel
Number of Terminations :
3
Channel Mode :
Enhancement
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Pulsed Drain Current-Max (IDM) :
30A
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Mount :
Through Hole
Additional Feature :
AVALANCHE RATED
Length :
16.24 mm
Pbfree Code :
yes
Mounting Type :
Through Hole
Product Status :
Active
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSFM-T3
Width :
5.3 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Type :
PolarP Power MOSFET
Turn-Off Delay Time :
52 ns
Power Dissipation-Max :
300W Tc
Input Capacitance (Ciss) (Max) @ Vds :
2840pF @ 25V
Mounting Style :
Through Hole
Packaging :
Tube
Power Dissipation (Max) :
300W (Tc)
JESD-609 Code :
e1
Product Category :
MOSFET
Reach Compliance Code :
Unknown
Case Connection :
DRAIN
Number of Elements :
1
Package :
Tube
Package / Case :
TO-247-3
Resistance :
750mOhm
Vgs(th) (Max) @ Id :
4V @ 250µA
Power Dissipation :
300W
FET Type :
P-Channel
Continuous Drain Current (ID) :
10A
Rds On (Max) @ Id, Vgs :
1 Ω @ 5A, 10V
Brand :
IXYS
Configuration :
Single
Drain to Source Breakdown Voltage :
-500V
Transistor Polarity :
P-Channel
Published :
2004
Avalanche Energy Rating (Eas) :
1500 mJ
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
PolarP™
Base Product Number :
IXTH10
Datasheets
IXTH10P50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH10P50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Type:PolarP Power MOSFET, Package / Case:TO-247-3, IXTH10P50P pinout, IXTH10P50P datasheet PDF, IXTH10P50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH10P50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH10P50P


P-Channel Tube 1 Ω @ 5A, 10V ±20V 2840pF @ 25V 50nC @ 10V 500V TO-247-3

IXTH10P50P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 2840pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 52 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 30A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTH10P50P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 30A.
a 500V drain to source voltage (Vdss)


IXTH10P50P Applications


There are a lot of IXYS
IXTH10P50P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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