IXTH10P50

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Mfr.Part #
IXTH10P50
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET P-CH 500V 10A TO247
Stock
10,160
In Stock :
10,160

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
10A Tc
RoHS Status :
ROHS3 Compliant
Additional Feature :
AVALANCHE RATED
Pulsed Drain Current-Max (IDM) :
40A
Surface Mount :
No
Product Status :
Obsolete
Series :
--
Manufacturer :
Littelfuse Inc
Qualification Status :
Not Qualified
Mount :
Through Hole
Element Configuration :
Single
Terminal Position :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
300W Tc
Package Shape :
RECTANGULAR
Voltage - Rated DC :
-500V
Transistor Element Material :
SILICON
Rise Time :
27ns
Case Connection :
DRAIN
Package :
Tube
Vgs (Max) :
±20V
Reach Compliance Code :
Compliant
FET Feature :
--
Input Capacitance (Ciss) (Max) @ Vds :
4700pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2002
Number of Elements :
1
JESD-30 Code :
R-PSFM-T3
Vgs(th) (Max) @ Id :
5V @ 250μA
Package / Case :
TO-247-3
Gate Charge (Qg) (Max) @ Vgs :
160nC @ 10V
Power Dissipation (Max) :
300W (Tc)
Pbfree Code :
yes
Supplier Device Package :
TO-247 (IXTH)
FET Type :
P-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminals :
3
Radiation Hardening :
No
Polarity/Channel Type :
P-Channel
JEDEC-95 Code :
TO-247AD
Operating Mode :
ENHANCEMENT MODE
Power Dissipation Ambient-Max :
300 W
Terminal Form :
THROUGH-HOLE
Drain to Source Voltage (Vdss) :
500V
Drain to Source Breakdown Voltage :
-500V
Pin Count :
3
Drain Current-Max (Abs) (ID) :
10 A
Resistance :
750mOhm
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
3
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
900m Ω @ 5A, 10V
Base Product Number :
IXTH10
Packaging :
Tube
Power Dissipation-Max (Abs) :
200 W
Turn-Off Delay Time :
35 ns
DS Breakdown Voltage-Min :
500 V
Gate to Source Voltage (Vgs) :
20V
Number of Pins :
3
Drain-source On Resistance-Max :
0.9 Ω
Current Rating :
-10A
Fall Time (Typ) :
35 ns
Power Dissipation :
300W
Mounting Type :
Through Hole
Continuous Drain Current (ID) :
10A
Datasheets
IXTH10P50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH10P50 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, IXTH10P50 pinout, IXTH10P50 datasheet PDF, IXTH10P50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH10P50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH10P50


P-Channel Tube 900m Ω @ 5A, 10V ±20V 4700pF @ 25V 160nC @ 10V 500V TO-247-3

IXTH10P50 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4700pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -500V.There is no drain current on this device since the maximum continuous current it can conduct is 10 A.As a result of its turn-off delay time, which is 35 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 40A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTH10P50 Features


a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 40A.
a 500V drain to source voltage (Vdss)


IXTH10P50 Applications


There are a lot of IXYS
IXTH10P50 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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