IXTH10P50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

40A

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Pins :

3

Resistance :

750mOhm

Mounting Type :

Through Hole

Package / Case :

TO-247-3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

10A

Manufacturer :

Littelfuse Inc

Reach Compliance Code :

Compliant

Series :

--

Power Dissipation Ambient-Max :

300 W

Package Shape :

RECTANGULAR

Radiation Hardening :

No

Terminal Form :

THROUGH-HOLE

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Voltage - Rated DC :

-500V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

DS Breakdown Voltage-Min :

500 V

Supplier Device Package :

TO-247 (IXTH)

Surface Mount :

No

Rise Time :

27ns

Drain to Source Breakdown Voltage :

-500V

FET Type :

P-Channel

Turn-Off Delay Time :

35 ns

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Published :

2002

Current Rating :

-10A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Mount :

Through Hole

Drain-source On Resistance-Max :

0.9 Ω

Power Dissipation :

300W

Pin Count :

3

Product Status :

Obsolete

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Terminal Position :

Single

Polarity/Channel Type :

P-Channel

Rds On (Max) @ Id, Vgs :

900m Ω @ 5A, 10V

Lead Free :

Lead Free

Package :

Tube

FET Feature :

--

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

10 A

Power Dissipation-Max (Abs) :

200 W

Base Product Number :

IXTH10

Element Configuration :

Single

Power Dissipation-Max :

300W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Pbfree Code :

yes

JEDEC-95 Code :

TO-247AD

Number of Terminals :

3

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

500V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation (Max) :

300W (Tc)

Fall Time (Typ) :

35 ns