IXTH110N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Type :

1 N-Channel

Product Status :

Active

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Radiation Hardening :

No

Product Category :

MOSFET

Mount :

Through Hole

Lead Free :

Lead Free

Minimum Operating Temperature :

-55 °C

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

694W Tc

RoHS :

Details

Channel Type :

N

Tradename :

HiPerFET

Drain to Source Breakdown Voltage :

250V

Rise Time :

27ns

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

24m Ω @ 55A, 10V

Brand :

IXYS

Number of Channels :

1 Channel

Continuous Drain Current (ID) :

110A

Channel Mode :

Enhancement

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e1

Width :

5.3mm

FET Feature :

--

FET Type :

N-Channel

Product Type :

MOSFET

Mounting Style :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Length :

16.26mm

Drain to Source Voltage (Vdss) :

250V

Package / Case :

TO-247-3

Fall Time (Typ) :

27 ns

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Transistor Application :

SWITCHING

Published :

2012

Number of Elements per Chip :

1

JEDEC-95 Code :

TO-247AD

Package Type :

TO-247

Configuration :

Single

Pbfree Code :

yes

Manufacturer :

IXYS

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Number of Terminations :

3

Supplier Device Package :

TO-247 (IXTH)

Power Dissipation (Max) :

694W (Tc)

Additional Feature :

AVALANCHE RATED

Transistor Polarity :

N-Channel

Reach Compliance Code :

Unknown

Base Product Number :

IXTH110

Height :

21.46mm

Power Dissipation :

694W

Packaging :

Tube

Turn-Off Delay Time :

60 ns

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Case Connection :

DRAIN

Resistance :

24mOhm

Maximum Operating Temperature :

+150 °C

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

157nC @ 10V

Series :

--

Number of Elements :

1

ECCN Code :

EAR99

Package :

Tube