IXTH102N20T
- Mfr.Part #
- IXTH102N20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 102A TO247
- Stock
- 36,621
- In Stock :
- 36,621
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 750W
- Polarity/Channel Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Number of Channels :
- 1 Channel
- DS Breakdown Voltage-Min :
- 200 V
- Height :
- 21.46 mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs (Max) :
- ±30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-247-3
- RoHS :
- Details
- Pulsed Drain Current-Max (IDM) :
- 250A
- JEDEC-95 Code :
- TO-247
- Width :
- 5.3 mm
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- Brand :
- IXYS
- Package :
- Tube
- Maximum Operating Temperature :
- + 175 C
- Qualification Status :
- Not Qualified
- Published :
- 2013
- Power Dissipation (Max) :
- 750W (Tc)
- Transistor Polarity :
- N-Channel
- Turn-Off Delay Time :
- 50 ns
- Product Type :
- MOSFET
- Pbfree Code :
- yes
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 200V
- Package Shape :
- RECTANGULAR
- Element Configuration :
- Single
- JESD-609 Code :
- e1
- Base Product Number :
- IXTH102
- RoHS Status :
- ROHS3 Compliant
- Channel Mode :
- Enhancement
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 25V
- Product Category :
- MOSFET
- Supplier Device Package :
- TO-247 (IXTH)
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 25 ns
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Compliant
- Drain Current-Max (Abs) (ID) :
- 102 A
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 750W Tc
- Manufacturer :
- IXYS
- Drain-source On Resistance-Max :
- 0.023 Ω
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge (Qg) (Max) @ Vgs :
- 114nC @ 10V
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- FET Feature :
- --
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 500mA, 10V
- Series :
- TrenchHV™
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Mounting Type :
- Through Hole
- Length :
- 16.26 mm
- Drain to Source Voltage (Vdss) :
- 200V
- Operating Mode :
- ENHANCEMENT MODE
- Minimum Operating Temperature :
- - 55 C
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSFM-T3
- Mount :
- Through Hole
- Pin Count :
- 3
- Rise Time :
- 26ns
- Product Status :
- Active
- Mounting Style :
- Through Hole
- Continuous Drain Current (ID) :
- 102A
- Power Dissipation-Max (Abs) :
- 750 W
- Gate to Source Voltage (Vgs) :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- Number of Terminals :
- 3
- Datasheets
- IXTH102N20T
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N-Channel Tube 23m Ω @ 500mA, 10V ±30V 6800pF @ 25V 114nC @ 10V 200V TO-247-3
IXTH102N20T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1200 mJ.A device's maximal input capacitance is 6800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 102A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 102 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 50 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTH102N20T Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 250A.
a 200V drain to source voltage (Vdss)
IXTH102N20T Applications
There are a lot of IXYS
IXTH102N20T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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