IXTH102N20T

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Mfr.Part #
IXTH102N20T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 102A TO247
Stock
36,621
In Stock :
36,621

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Minimum Operating Temperature :
- 55 C
Pbfree Code :
yes
Terminal Form :
THROUGH-HOLE
Drain-source On Resistance-Max :
0.023 Ω
Continuous Drain Current (ID) :
102A
DS Breakdown Voltage-Min :
200 V
Pulsed Drain Current-Max (IDM) :
250A
Power Dissipation (Max) :
750W (Tc)
Product Type :
MOSFET
Surface Mount :
No
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Drain to Source Breakdown Voltage :
200V
Element Configuration :
Single
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
Gate to Source Voltage (Vgs) :
30V
Avalanche Energy Rating (Eas) :
1200 mJ
Drain to Source Voltage (Vdss) :
200V
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 25V
Number of Terminals :
3
Length :
16.26 mm
Base Product Number :
IXTH102
Turn-Off Delay Time :
50 ns
Brand :
IXYS
Published :
2013
Package / Case :
TO-247-3
Transistor Type :
1 N-Channel
Current - Continuous Drain (Id) @ 25°C :
102A Tc
Transistor Polarity :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Manufacturer :
IXYS
Rds On (Max) @ Id, Vgs :
23m Ω @ 500mA, 10V
Number of Elements :
1
Supplier Device Package :
TO-247 (IXTH)
Power Dissipation-Max (Abs) :
750 W
Rise Time :
26ns
Product Category :
MOSFET
Operating Temperature :
-55°C~175°C TJ
Mounting Style :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
N-Channel
Package Shape :
RECTANGULAR
RoHS :
Details
Width :
5.3 mm
Gate Charge (Qg) (Max) @ Vgs :
114nC @ 10V
Number of Channels :
1 Channel
Terminal Position :
Single
Number of Terminations :
3
JEDEC-95 Code :
TO-247
JESD-30 Code :
R-PSFM-T3
Height :
21.46 mm
JESD-609 Code :
e1
Drain Current-Max (Abs) (ID) :
102 A
Vgs (Max) :
±30V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Package :
Tube
Mount :
Through Hole
Power Dissipation-Max :
750W Tc
Transistor Application :
SWITCHING
Packaging :
Tube
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Series :
TrenchHV™
Operating Mode :
ENHANCEMENT MODE
Configuration :
Single
Channel Mode :
Enhancement
Qualification Status :
Not Qualified
FET Feature :
--
Product Status :
Active
Reach Compliance Code :
Compliant
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Fall Time (Typ) :
25 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
750W
Pin Count :
3
FET Type :
N-Channel
Number of Pins :
3
Maximum Operating Temperature :
+ 175 C
Datasheets
IXTH102N20T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH102N20T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, IXTH102N20T pinout, IXTH102N20T datasheet PDF, IXTH102N20T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH102N20T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH102N20T


N-Channel Tube 23m Ω @ 500mA, 10V ±30V 6800pF @ 25V 114nC @ 10V 200V TO-247-3

IXTH102N20T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1200 mJ.A device's maximal input capacitance is 6800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 102A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 102 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 50 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTH102N20T Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 250A.
a 200V drain to source voltage (Vdss)


IXTH102N20T Applications


There are a lot of IXYS
IXTH102N20T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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