IXTH102N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

200V

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

114nC @ 10V

Power Dissipation :

750W

JESD-609 Code :

e1

Pbfree Code :

yes

Configuration :

Single

JESD-30 Code :

R-PSFM-T3

Number of Channels :

1 Channel

Qualification Status :

Not Qualified

Published :

2013

Height :

21.46 mm

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Surface Mount :

No

Maximum Operating Temperature :

+ 175 C

Product Status :

Active

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

JEDEC-95 Code :

TO-247

Product Type :

MOSFET

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS :

Details

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

16.26 mm

Fall Time (Typ) :

25 ns

FET Type :

N-Channel

Pin Count :

3

Rds On (Max) @ Id, Vgs :

23m Ω @ 500mA, 10V

Avalanche Energy Rating (Eas) :

1200 mJ

Drain-source On Resistance-Max :

0.023 Ω

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Style :

Through Hole

Supplier Device Package :

TO-247 (IXTH)

Package Shape :

RECTANGULAR

Minimum Operating Temperature :

- 55 C

Series :

TrenchHV™

Current - Continuous Drain (Id) @ 25°C :

102A Tc

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Continuous Drain Current (ID) :

102A

Manufacturer :

IXYS

Rise Time :

26ns

Width :

5.3 mm

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Number of Terminals :

3

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Package / Case :

TO-247-3

Reach Compliance Code :

Compliant

Pulsed Drain Current-Max (IDM) :

250A

Terminal Form :

THROUGH-HOLE

Brand :

IXYS

Transistor Polarity :

N-Channel

Power Dissipation-Max :

750W Tc

Number of Elements :

1

Packaging :

Tube

DS Breakdown Voltage-Min :

200 V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

200V

Transistor Type :

1 N-Channel

Turn-Off Delay Time :

50 ns

FET Feature :

--

Channel Mode :

Enhancement

Package :

Tube

Power Dissipation-Max (Abs) :

750 W

Drain Current-Max (Abs) (ID) :

102 A

Terminal Position :

Single

Power Dissipation (Max) :

750W (Tc)

Gate to Source Voltage (Vgs) :

30V

Base Product Number :

IXTH102