IXTH102N20T
- Mfr.Part #
- IXTH102N20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 102A TO247
- Stock
- 36,621
- In Stock :
- 36,621
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Type :
- MOSFET
- Package :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Package Shape :
- RECTANGULAR
- Maximum Operating Temperature :
- + 175 C
- FET Type :
- N-Channel
- Product Status :
- Active
- Transistor Polarity :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Surface Mount :
- No
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 750W
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Position :
- Single
- Number of Channels :
- 1 Channel
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 500mA, 10V
- Drain Current-Max (Abs) (ID) :
- 102 A
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 750W Tc
- Number of Terminals :
- 3
- Mounting Style :
- Through Hole
- Vgs (Max) :
- ±30V
- Drain-source On Resistance-Max :
- 0.023 Ω
- Number of Elements :
- 1
- Channel Mode :
- Enhancement
- Length :
- 16.26 mm
- Rise Time :
- 26ns
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Series :
- TrenchHV™
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Current-Max (IDM) :
- 250A
- Product Category :
- MOSFET
- Width :
- 5.3 mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 750W (Tc)
- DS Breakdown Voltage-Min :
- 200 V
- Continuous Drain Current (ID) :
- 102A
- Configuration :
- Single
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-247-3
- Transistor Application :
- SWITCHING
- Minimum Operating Temperature :
- - 55 C
- Mount :
- Through Hole
- Supplier Device Package :
- TO-247 (IXTH)
- Base Product Number :
- IXTH102
- FET Feature :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- RoHS :
- Details
- Turn-Off Delay Time :
- 50 ns
- Reach Compliance Code :
- Compliant
- Polarity/Channel Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Drain to Source Breakdown Voltage :
- 200V
- JEDEC-95 Code :
- TO-247
- Number of Terminations :
- 3
- Published :
- 2013
- Packaging :
- Tube
- Transistor Type :
- 1 N-Channel
- Terminal Form :
- THROUGH-HOLE
- Manufacturer :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 114nC @ 10V
- Fall Time (Typ) :
- 25 ns
- Height :
- 21.46 mm
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 200V
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- JESD-609 Code :
- e1
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max (Abs) :
- 750 W
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 25V
- Datasheets
- IXTH102N20T
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N-Channel Tube 23m Ω @ 500mA, 10V ±30V 6800pF @ 25V 114nC @ 10V 200V TO-247-3
IXTH102N20T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1200 mJ.A device's maximal input capacitance is 6800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 102A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 102 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 50 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTH102N20T Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 250A.
a 200V drain to source voltage (Vdss)
IXTH102N20T Applications
There are a lot of IXYS
IXTH102N20T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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