IXTH102N20T

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Mfr.Part #
IXTH102N20T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 102A TO247
Stock
36,621
In Stock :
36,621

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e1
Power Dissipation (Max) :
750W (Tc)
Current - Continuous Drain (Id) @ 25°C :
102A Tc
Brand :
IXYS
DS Breakdown Voltage-Min :
200 V
Packaging :
Tube
Pbfree Code :
yes
Number of Terminations :
3
Reach Compliance Code :
Compliant
Package / Case :
TO-247-3
Minimum Operating Temperature :
- 55 C
Published :
2013
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 25V
RoHS :
Details
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
--
Number of Channels :
1 Channel
Series :
TrenchHV™
Product Status :
Active
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
102A
Product Type :
MOSFET
Additional Feature :
AVALANCHE RATED
Surface Mount :
No
ECCN Code :
EAR99
Fall Time (Typ) :
25 ns
Channel Mode :
Enhancement
Maximum Operating Temperature :
+ 175 C
Number of Terminals :
3
Package :
Tube
Number of Pins :
3
Terminal Form :
THROUGH-HOLE
Vgs (Max) :
±30V
Rds On (Max) @ Id, Vgs :
23m Ω @ 500mA, 10V
Pin Count :
3
Drain Current-Max (Abs) (ID) :
102 A
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
114nC @ 10V
Transistor Type :
1 N-Channel
Power Dissipation-Max :
750W Tc
Turn-Off Delay Time :
50 ns
Element Configuration :
Single
JEDEC-95 Code :
TO-247
Product Category :
MOSFET
Drain to Source Voltage (Vdss) :
200V
Mounting Style :
Through Hole
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
30V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pulsed Drain Current-Max (IDM) :
250A
Base Product Number :
IXTH102
Mount :
Through Hole
Power Dissipation :
750W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Length :
16.26 mm
Operating Temperature :
-55°C~175°C TJ
Polarity/Channel Type :
N-Channel
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.023 Ω
Height :
21.46 mm
Power Dissipation-Max (Abs) :
750 W
Width :
5.3 mm
JESD-30 Code :
R-PSFM-T3
Supplier Device Package :
TO-247 (IXTH)
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Transistor Element Material :
SILICON
Terminal Position :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Manufacturer :
IXYS
Drain to Source Breakdown Voltage :
200V
Rise Time :
26ns
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Qualification Status :
Not Qualified
Avalanche Energy Rating (Eas) :
1200 mJ
Transistor Polarity :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
Single
Datasheets
IXTH102N20T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH102N20T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-247-3, Number of Channels:1 Channel, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, IXTH102N20T pinout, IXTH102N20T datasheet PDF, IXTH102N20T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH102N20T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH102N20T


N-Channel Tube 23m Ω @ 500mA, 10V ±30V 6800pF @ 25V 114nC @ 10V 200V TO-247-3

IXTH102N20T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1200 mJ.A device's maximal input capacitance is 6800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 102A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 102 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 50 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTH102N20T Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 250A.
a 200V drain to source voltage (Vdss)


IXTH102N20T Applications


There are a lot of IXYS
IXTH102N20T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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