IXTH102N20T
- Mfr.Part #
- IXTH102N20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 102A TO247
- Stock
- 36,621
- In Stock :
- 36,621
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Minimum Operating Temperature :
- - 55 C
- Pbfree Code :
- yes
- Terminal Form :
- THROUGH-HOLE
- Drain-source On Resistance-Max :
- 0.023 Ω
- Continuous Drain Current (ID) :
- 102A
- DS Breakdown Voltage-Min :
- 200 V
- Pulsed Drain Current-Max (IDM) :
- 250A
- Power Dissipation (Max) :
- 750W (Tc)
- Product Type :
- MOSFET
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Drain to Source Breakdown Voltage :
- 200V
- Element Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 30V
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Drain to Source Voltage (Vdss) :
- 200V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 25V
- Number of Terminals :
- 3
- Length :
- 16.26 mm
- Base Product Number :
- IXTH102
- Turn-Off Delay Time :
- 50 ns
- Brand :
- IXYS
- Published :
- 2013
- Package / Case :
- TO-247-3
- Transistor Type :
- 1 N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Transistor Polarity :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 500mA, 10V
- Number of Elements :
- 1
- Supplier Device Package :
- TO-247 (IXTH)
- Power Dissipation-Max (Abs) :
- 750 W
- Rise Time :
- 26ns
- Product Category :
- MOSFET
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Style :
- Through Hole
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- RoHS :
- Details
- Width :
- 5.3 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 114nC @ 10V
- Number of Channels :
- 1 Channel
- Terminal Position :
- Single
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-247
- JESD-30 Code :
- R-PSFM-T3
- Height :
- 21.46 mm
- JESD-609 Code :
- e1
- Drain Current-Max (Abs) (ID) :
- 102 A
- Vgs (Max) :
- ±30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Package :
- Tube
- Mount :
- Through Hole
- Power Dissipation-Max :
- 750W Tc
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Series :
- TrenchHV™
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- Single
- Channel Mode :
- Enhancement
- Qualification Status :
- Not Qualified
- FET Feature :
- --
- Product Status :
- Active
- Reach Compliance Code :
- Compliant
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Fall Time (Typ) :
- 25 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 750W
- Pin Count :
- 3
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Maximum Operating Temperature :
- + 175 C
- Datasheets
- IXTH102N20T
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N-Channel Tube 23m Ω @ 500mA, 10V ±30V 6800pF @ 25V 114nC @ 10V 200V TO-247-3
IXTH102N20T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1200 mJ.A device's maximal input capacitance is 6800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 102A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 102 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 50 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTH102N20T Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 250A.
a 200V drain to source voltage (Vdss)
IXTH102N20T Applications
There are a lot of IXYS
IXTH102N20T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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