IXTH102N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Type :

MOSFET

Package :

Tube

JESD-30 Code :

R-PSFM-T3

Package Shape :

RECTANGULAR

Maximum Operating Temperature :

+ 175 C

FET Type :

N-Channel

Product Status :

Active

Transistor Polarity :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Qualification Status :

Not Qualified

Power Dissipation :

750W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Number of Channels :

1 Channel

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

23m Ω @ 500mA, 10V

Drain Current-Max (Abs) (ID) :

102 A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

750W Tc

Number of Terminals :

3

Mounting Style :

Through Hole

Vgs (Max) :

±30V

Drain-source On Resistance-Max :

0.023 Ω

Number of Elements :

1

Channel Mode :

Enhancement

Length :

16.26 mm

Rise Time :

26ns

ECCN Code :

EAR99

Pin Count :

3

Series :

TrenchHV™

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

250A

Product Category :

MOSFET

Width :

5.3 mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation (Max) :

750W (Tc)

DS Breakdown Voltage-Min :

200 V

Continuous Drain Current (ID) :

102A

Configuration :

Single

Case Connection :

DRAIN

Number of Pins :

3

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

Minimum Operating Temperature :

- 55 C

Mount :

Through Hole

Supplier Device Package :

TO-247 (IXTH)

Base Product Number :

IXTH102

FET Feature :

--

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

102A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Brand :

IXYS

RoHS :

Details

Turn-Off Delay Time :

50 ns

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Avalanche Energy Rating (Eas) :

1200 mJ

Drain to Source Breakdown Voltage :

200V

JEDEC-95 Code :

TO-247

Number of Terminations :

3

Published :

2013

Packaging :

Tube

Transistor Type :

1 N-Channel

Terminal Form :

THROUGH-HOLE

Manufacturer :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

114nC @ 10V

Fall Time (Typ) :

25 ns

Height :

21.46 mm

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

200V

Vgs(th) (Max) @ Id :

4.5V @ 1mA

JESD-609 Code :

e1

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max (Abs) :

750 W

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V