IXTH102N20T

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Mfr.Part #
IXTH102N20T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 102A TO247
Stock
36,621
In Stock :
36,621

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
750W
Polarity/Channel Type :
N-Channel
Transistor Type :
1 N-Channel
Number of Channels :
1 Channel
DS Breakdown Voltage-Min :
200 V
Height :
21.46 mm
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs (Max) :
±30V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
TO-247-3
RoHS :
Details
Pulsed Drain Current-Max (IDM) :
250A
JEDEC-95 Code :
TO-247
Width :
5.3 mm
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
102A Tc
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Terminal Form :
THROUGH-HOLE
Terminal Position :
Single
Brand :
IXYS
Package :
Tube
Maximum Operating Temperature :
+ 175 C
Qualification Status :
Not Qualified
Published :
2013
Power Dissipation (Max) :
750W (Tc)
Transistor Polarity :
N-Channel
Turn-Off Delay Time :
50 ns
Product Type :
MOSFET
Pbfree Code :
yes
Packaging :
Tube
Drain to Source Breakdown Voltage :
200V
Package Shape :
RECTANGULAR
Element Configuration :
Single
JESD-609 Code :
e1
Base Product Number :
IXTH102
RoHS Status :
ROHS3 Compliant
Channel Mode :
Enhancement
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 25V
Product Category :
MOSFET
Supplier Device Package :
TO-247 (IXTH)
Configuration :
Single
Transistor Element Material :
SILICON
Number of Terminations :
3
Fall Time (Typ) :
25 ns
ECCN Code :
EAR99
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
Compliant
Drain Current-Max (Abs) (ID) :
102 A
Operating Temperature :
-55°C~175°C TJ
Power Dissipation-Max :
750W Tc
Manufacturer :
IXYS
Drain-source On Resistance-Max :
0.023 Ω
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate Charge (Qg) (Max) @ Vgs :
114nC @ 10V
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
FET Feature :
--
Rds On (Max) @ Id, Vgs :
23m Ω @ 500mA, 10V
Series :
TrenchHV™
Avalanche Energy Rating (Eas) :
1200 mJ
Mounting Type :
Through Hole
Length :
16.26 mm
Drain to Source Voltage (Vdss) :
200V
Operating Mode :
ENHANCEMENT MODE
Minimum Operating Temperature :
- 55 C
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSFM-T3
Mount :
Through Hole
Pin Count :
3
Rise Time :
26ns
Product Status :
Active
Mounting Style :
Through Hole
Continuous Drain Current (ID) :
102A
Power Dissipation-Max (Abs) :
750 W
Gate to Source Voltage (Vgs) :
30V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
No
Number of Terminals :
3
Datasheets
IXTH102N20T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH102N20T from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-247-3, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, IXTH102N20T pinout, IXTH102N20T datasheet PDF, IXTH102N20T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH102N20T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH102N20T


N-Channel Tube 23m Ω @ 500mA, 10V ±30V 6800pF @ 25V 114nC @ 10V 200V TO-247-3

IXTH102N20T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1200 mJ.A device's maximal input capacitance is 6800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 102A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 102 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 50 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTH102N20T Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 250A.
a 200V drain to source voltage (Vdss)


IXTH102N20T Applications


There are a lot of IXYS
IXTH102N20T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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