IXTH8P50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Type :

1 P-Channel

Case Connection :

DRAIN

Published :

2005

Operating Temperature :

-55°C~150°C TJ

Transistor Polarity :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Fall Time (Typ) :

35 ns

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

THROUGH-HOLE

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Length :

16.26 mm

FET Feature :

--

Reach Compliance Code :

Compliant

Width :

5.3 mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package :

Tube

Drain to Source Voltage (Vdss) :

500V

Product Category :

MOSFET

Product Status :

Active

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

1.2 Ω

Package Shape :

RECTANGULAR

Height :

21.46 mm

Number of Channels :

1 Channel

Drain Current-Max (Abs) (ID) :

8A

Maximum Operating Temperature :

+ 150 C

Base Product Number :

IXTH8

Number of Terminals :

3

Surface Mount :

No

Series :

--

Number of Terminations :

3

Mount :

Through Hole

Polarity/Channel Type :

P-Channel

Minimum Operating Temperature :

- 55 C

Pulsed Drain Current-Max (IDM) :

32 A

RoHS :

Details

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 25V

Package / Case :

TO-247-3

JEDEC-95 Code :

TO-247AD

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Voltage - Rated DC :

-500V

Power Dissipation-Max :

180W Tc

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

Not Applicable

Pin Count :

3

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 4A, 10V

Drain to Source Breakdown Voltage :

-500V

Supplier Device Package :

TO-247 (IXTH)

Transistor Application :

SWITCHING

Factory Lead Time :

28 Weeks

Manufacturer :

IXYS

Power Dissipation :

180W

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Product Type :

MOSFET

Power Dissipation-Max (Abs) :

150 W

DS Breakdown Voltage-Min :

500 V

Channel Mode :

Enhancement

Rise Time :

27ns

Packaging :

Tube

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Turn-Off Delay Time :

35 ns

Configuration :

Single

Brand :

IXYS

Type :

Standard Power MOSFET

FET Type :

P-Channel

Vgs (Max) :

±20V

Power Dissipation Ambient-Max :

180 W

Continuous Drain Current (ID) :

8A

Resistance :

1.2Ohm

Current Rating :

-8A

Mounting Style :

Through Hole

Power Dissipation (Max) :

180W (Tc)