IXTH88N30P
- Mfr.Part #
- IXTH88N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 88A TO247
- Stock
- 9,135
- In Stock :
- 9,135
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- THROUGH-HOLE
- Factory Lead Time :
- 35 Weeks
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Package / Case :
- TO-247-3
- DS Breakdown Voltage-Min :
- 300 V
- Transistor Application :
- SWITCHING
- Brand :
- IXYS
- Rds On Max :
- 40 mΩ
- Drain to Source Breakdown Voltage :
- 300V
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 44A, 10V
- Number of Terminals :
- 3
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Subcategory :
- MOSFETs
- Series :
- PolarHT™
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Qualification Status :
- Not Qualified
- Channel Mode :
- Enhancement
- Published :
- 2006
- Pin Count :
- 3
- Configuration :
- Single
- Input Capacitance :
- 6.3 nF
- Drain-source On Resistance-Max :
- 0.04 Ω
- Min Operating Temperature :
- -55 °C
- Mounting Style :
- Through Hole
- Resistance :
- 40mOhm
- Package Shape :
- RECTANGULAR
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- MOSFET
- Continuous Drain Current (ID) :
- 88A
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- Mount :
- Through Hole
- RoHS :
- Details
- Power Dissipation (Max) :
- 600W (Tc)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Radiation Hardening :
- No
- Max Power Dissipation :
- 600 W
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Reach Compliance Code :
- Compliant
- RoHS Status :
- ROHS3 Compliant
- Max Operating Temperature :
- 150 °C
- Fall Time (Typ) :
- 25 ns
- Element Configuration :
- Single
- Transistor Polarity :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Power Dissipation :
- 600W
- Additional Feature :
- AVALANCHE RATED
- Current - Continuous Drain (Id) @ 25°C :
- 88A Tc
- Supplier Device Package :
- TO-247 (IXTH)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 220A
- Terminal Position :
- Single
- Surface Mount :
- No
- FET Feature :
- --
- Mounting Type :
- Through Hole
- Drain to Source Resistance :
- 40 mΩ
- JEDEC-95 Code :
- TO-247AD
- Maximum Operating Temperature :
- + 150 C
- FET Type :
- N-Channel
- Product Category :
- MOSFET
- Manufacturer :
- IXYS
- Product Status :
- Active
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Type :
- 1 N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Package :
- Tube
- Rise Time :
- 24ns
- Polarity/Channel Type :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Number of Channels :
- 1 Channel
- Power Dissipation-Max :
- 600W Tc
- Turn-Off Delay Time :
- 96 ns
- Drain to Source Voltage (Vdss) :
- 300V
- Base Product Number :
- IXTH88
- Datasheets
- IXTH88N30P
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N-Channel Tube 40m Ω @ 44A, 10V ±20V 6300pF @ 25V 180nC @ 10V 300V TO-247-3
IXTH88N30P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6300pF @ 25V.This device conducts a continuous drain current (ID) of 88A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 96 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 220A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 40 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTH88N30P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 220A.
single MOSFETs transistor is 40 mΩ
a 300V drain to source voltage (Vdss)
IXTH88N30P Applications
There are a lot of IXYS
IXTH88N30P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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