IXTH88N30P

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Mfr.Part #
IXTH88N30P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 300V 88A TO247
Stock
9,135
In Stock :
9,135

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
THROUGH-HOLE
Factory Lead Time :
35 Weeks
JESD-609 Code :
e1
Number of Elements :
1
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Package / Case :
TO-247-3
DS Breakdown Voltage-Min :
300 V
Transistor Application :
SWITCHING
Brand :
IXYS
Rds On Max :
40 mΩ
Drain to Source Breakdown Voltage :
300V
Rds On (Max) @ Id, Vgs :
40m Ω @ 44A, 10V
Number of Terminals :
3
Avalanche Energy Rating (Eas) :
2000 mJ
Subcategory :
MOSFETs
Series :
PolarHT™
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Gate to Source Voltage (Vgs) :
20V
Qualification Status :
Not Qualified
Channel Mode :
Enhancement
Published :
2006
Pin Count :
3
Configuration :
Single
Input Capacitance :
6.3 nF
Drain-source On Resistance-Max :
0.04 Ω
Min Operating Temperature :
-55 °C
Mounting Style :
Through Hole
Resistance :
40mOhm
Package Shape :
RECTANGULAR
Operating Temperature :
-55°C~150°C TJ
Product Type :
MOSFET
Continuous Drain Current (ID) :
88A
Input Capacitance (Ciss) (Max) @ Vds :
6300pF @ 25V
Mount :
Through Hole
RoHS :
Details
Power Dissipation (Max) :
600W (Tc)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Radiation Hardening :
No
Max Power Dissipation :
600 W
Lead Free :
Lead Free
Vgs (Max) :
±20V
Reach Compliance Code :
Compliant
RoHS Status :
ROHS3 Compliant
Max Operating Temperature :
150 °C
Fall Time (Typ) :
25 ns
Element Configuration :
Single
Transistor Polarity :
N-Channel
Minimum Operating Temperature :
- 55 C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Power Dissipation :
600W
Additional Feature :
AVALANCHE RATED
Current - Continuous Drain (Id) @ 25°C :
88A Tc
Supplier Device Package :
TO-247 (IXTH)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Pulsed Drain Current-Max (IDM) :
220A
Terminal Position :
Single
Surface Mount :
No
FET Feature :
--
Mounting Type :
Through Hole
Drain to Source Resistance :
40 mΩ
JEDEC-95 Code :
TO-247AD
Maximum Operating Temperature :
+ 150 C
FET Type :
N-Channel
Product Category :
MOSFET
Manufacturer :
IXYS
Product Status :
Active
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
5V @ 250μA
Transistor Type :
1 N-Channel
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Package :
Tube
Rise Time :
24ns
Polarity/Channel Type :
N-Channel
JESD-30 Code :
R-PSFM-T3
Number of Channels :
1 Channel
Power Dissipation-Max :
600W Tc
Turn-Off Delay Time :
96 ns
Drain to Source Voltage (Vdss) :
300V
Base Product Number :
IXTH88
Datasheets
IXTH88N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH88N30P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, IXTH88N30P pinout, IXTH88N30P datasheet PDF, IXTH88N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH88N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH88N30P


N-Channel Tube 40m Ω @ 44A, 10V ±20V 6300pF @ 25V 180nC @ 10V 300V TO-247-3

IXTH88N30P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6300pF @ 25V.This device conducts a continuous drain current (ID) of 88A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 96 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 220A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 40 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTH88N30P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 220A.
single MOSFETs transistor is 40 mΩ
a 300V drain to source voltage (Vdss)


IXTH88N30P Applications


There are a lot of IXYS
IXTH88N30P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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