IXTH86N25T
- Mfr.Part #
- IXTH86N25T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 86A TO247
- Stock
- 9,490
- In Stock :
- 9,490
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Tradename :
- HiPerFET
- Surface Mount :
- No
- JESD-609 Code :
- e1
- Supplier Device Package :
- TO-247 (IXTH)
- Reach Compliance Code :
- Compliant
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 5330pF @ 25V
- Polarity/Channel Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 190A
- Pbfree Code :
- yes
- Published :
- 2012
- Number of Terminals :
- 3
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.037Ohm
- Base Product Number :
- IXTH86
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 86A Tc
- RoHS Status :
- RoHS Compliant
- Brand :
- IXYS
- Drain to Source Voltage (Vdss) :
- 250V
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- ECCN Code :
- EAR99
- Power Dissipation (Max) :
- 540W (Ta)
- Drain Current-Max (Abs) (ID) :
- 86A
- Product Type :
- MOSFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation-Max :
- 540W Ta
- Manufacturer :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- DS Breakdown Voltage-Min :
- 250V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 37m Ω @ 43A, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Maximum Operating Temperature :
- + 150 C
- Product :
- Power MOSFET Modules
- Subcategory :
- MOSFETs
- Package / Case :
- TO-247-3
- Transistor Polarity :
- N-Channel
- RoHS :
- Details
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- -
- Factory Lead Time :
- 30 Weeks
- Series :
- Trench
- Operating Temperature :
- -55°C~150°C TJ
- Product Category :
- MOSFET
- Packaging :
- Tube
- Package :
- Tube
- Rise Time :
- 28 ns
- Type :
- Trench Gate
- Product Status :
- Active
- Package Shape :
- RECTANGULAR
- Qualification Status :
- Not Qualified
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code :
- TO-247AD
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 105nC @ 10V
- Datasheets
- IXTH86N25T
N-Channel Tube 37m Ω @ 43A, 10V ±30V 5330pF @ 25V 105nC @ 10V 250V TO-247-3
IXTH86N25T Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5330pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [86A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 190A.The DS breakdown voltage should be maintained above 250V to maintain normal operation.To operate this transistor, you will need a 250V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTH86N25T Features
the avalanche energy rating (Eas) is 1500 mJ
based on its rated peak drain current 190A.
a 250V drain to source voltage (Vdss)
IXTH86N25T Applications
There are a lot of IXYS
IXTH86N25T applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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