IXTH80N65X2
- Mfr.Part #
- IXTH80N65X2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 80A TO247
- Stock
- 26,387
- In Stock :
- 26,387
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 7753pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Height :
- 25.66mm
- Transistor Type :
- 1 N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Manufacturer Package Identifier :
- IXTH80N65X2
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Voltage (Vdss) :
- 650V
- FET Feature :
- --
- Tradename :
- HiPerFET
- Drain to Source Breakdown Voltage :
- 650V
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 40A, 10V
- Minimum Operating Temperature :
- -55 °C
- Power Dissipation (Max) :
- 890W (Tc)
- Transistor Polarity :
- N-Channel
- Package Type :
- TO-247
- Package / Case :
- TO-247-3
- Width :
- 21.34mm
- Published :
- 2015
- Package :
- Tube
- Number of Elements per Chip :
- 1
- Maximum Operating Temperature :
- +150 °C
- Factory Lead Time :
- 15 Weeks
- Subcategory :
- MOSFETs
- Product Status :
- Active
- Length :
- 16.13mm
- Mounting Style :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 890W
- Manufacturer :
- IXYS
- Rise Time :
- 11 ns
- RoHS :
- Details
- Power Dissipation-Max :
- 890W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 144nC @ 10V
- Packaging :
- Tube
- Max Junction Temperature (Tj) :
- 150°C
- Turn-Off Delay Time :
- 72 ns
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Brand :
- IXYS
- Channel Type :
- N
- Supplier Device Package :
- TO-247
- Mount :
- Through Hole
- Turn On Delay Time :
- 36 ns
- Continuous Drain Current (ID) :
- 80A
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Type :
- MOSFET
- Channel Mode :
- Enhancement
- Series :
- --
- Reach Compliance Code :
- not_compliant
- Base Product Number :
- IXTH80
- Product Category :
- MOSFET
- Number of Channels :
- 1
- Mounting Type :
- Through Hole
- Datasheets
- IXTH80N65X2
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N-Channel Tube 40m Ω @ 40A, 10V ±30V 7753pF @ 25V 144nC @ 10V 650V TO-247-3
IXTH80N65X2 Overview
The maximum input capacitance of this device is 7753pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.When VGS=650V, and ID flows to VDS at 650VVDS, the drain-source breakdown voltage is 650V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 72 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 36 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 650V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTH80N65X2 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 72 ns
a 650V drain to source voltage (Vdss)
IXTH80N65X2 Applications
There are a lot of IXYS
IXTH80N65X2 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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