IXTH80N20L
- Mfr.Part #
- IXTH80N20L
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 80A TO247
- Stock
- 3,199
- In Stock :
- 3,199
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 200V
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Manufacturer :
- IXYS
- FET Type :
- N-Channel
- Published :
- 2010
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-247-3
- Number of Pins :
- 3
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 80A
- Base Product Number :
- IXTH80
- ECCN Code :
- EAR99
- Factory Lead Time :
- 17 Weeks
- Product Type :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Transistor Polarity :
- N-Channel
- Product Status :
- Active
- Power Dissipation (Max) :
- 520W (Tc)
- Number of Channels :
- 1 Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- AVALANCHE RATED
- Mount :
- Through Hole
- Mounting Style :
- Through Hole
- Series :
- Linear™
- Maximum Operating Temperature :
- + 150 C
- Brand :
- IXYS
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Rise Time :
- 44 ns
- Mounting Type :
- Through Hole
- Channel Mode :
- Enhancement
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS :
- Details
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Supplier Device Package :
- TO-247 (IXTH)
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Product Category :
- MOSFET
- Vgs (Max) :
- ±20V
- FET Feature :
- --
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Minimum Operating Temperature :
- - 55 C
- DS Breakdown Voltage-Min :
- 200V
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 40A, 10V
- Packaging :
- Tube
- Reach Compliance Code :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 520W Tc
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 6160pF @ 25V
- Datasheets
- IXTH80N20L
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N-Channel Tube 32m Ω @ 40A, 10V ±20V 6160pF @ 25V 180nC @ 10V 200V TO-247-3
IXTH80N20L Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6160pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTH80N20L Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 80A
a 200V drain to source voltage (Vdss)
IXTH80N20L Applications
There are a lot of IXYS
IXTH80N20L applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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