IXTH80N20L
- Mfr.Part #
- IXTH80N20L
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 80A TO247
- Stock
- 3,199
- In Stock :
- 3,199
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Package :
- Tube
- Mounting Style :
- Through Hole
- Channel Mode :
- Enhancement
- Drain to Source Voltage (Vdss) :
- 200V
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 40A, 10V
- Continuous Drain Current (ID) :
- 80A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- Linear™
- Product Type :
- MOSFET
- DS Breakdown Voltage-Min :
- 200V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 6160pF @ 25V
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1 Channel
- Power Dissipation (Max) :
- 520W (Tc)
- Operating Temperature :
- -55°C~150°C TJ
- FET Feature :
- --
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Number of Terminations :
- 3
- Rise Time :
- 44 ns
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- N-Channel
- Published :
- 2010
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Maximum Operating Temperature :
- + 150 C
- RoHS :
- Details
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 520W Tc
- Factory Lead Time :
- 17 Weeks
- Reach Compliance Code :
- Unknown
- Case Connection :
- DRAIN
- Brand :
- IXYS
- Manufacturer :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Minimum Operating Temperature :
- - 55 C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Pins :
- 3
- Supplier Device Package :
- TO-247 (IXTH)
- Base Product Number :
- IXTH80
- Mounting Type :
- Through Hole
- Product Category :
- MOSFET
- Mount :
- Through Hole
- Package / Case :
- TO-247-3
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Packaging :
- Tube
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Lead Free :
- Lead Free
- Datasheets
- IXTH80N20L
IXTH80N20L Documents
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N-Channel Tube 32m Ω @ 40A, 10V ±20V 6160pF @ 25V 180nC @ 10V 200V TO-247-3
IXTH80N20L Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6160pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTH80N20L Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 80A
a 200V drain to source voltage (Vdss)
IXTH80N20L Applications
There are a lot of IXYS
IXTH80N20L applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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