IXTH75N10

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Mfr.Part #
IXTH75N10
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 75A TO247
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Avalanche Energy Rating (Eas) :
2500 mJ
Transistor Type :
1 N-Channel
Pulsed Drain Current-Max (IDM) :
225A
Power Dissipation (Max) :
400W (Tc)
Rds On (Max) @ Id, Vgs :
21m Ω @ 500mA, 10V
FET Type :
N-Channel
Mounting Style :
Through Hole
Product Status :
Active
JESD-30 Code :
R-PSFM-T3
Manufacturer :
IXYS
Supplier Device Package :
TO-247 (IXTH)
Product Type :
MOSFET
Lead Free :
Lead Free
FET Feature :
--
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
400W
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Drain to Source Breakdown Voltage :
100V
Gate Charge (Qg) (Max) @ Vgs :
215nC @ 10V
Number of Channels :
1 Channel
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
28 Weeks
Number of Elements :
1
Mounting Type :
Through Hole
Power Dissipation-Max :
400W Tc
Base Product Number :
IXTH75
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pbfree Code :
yes
Channel Mode :
Enhancement
Additional Feature :
AVALANCHE RATED
Continuous Drain Current (ID) :
75A
Minimum Operating Temperature :
- 55 C
Drain-source On Resistance-Max :
0.021Ohm
Published :
2009
Package / Case :
TO-247-3
Package :
Tube
Configuration :
Single
JESD-609 Code :
e1
Number of Terminations :
3
Transistor Element Material :
SILICON
Packaging :
Tube
Reach Compliance Code :
Unknown
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±20V
Brand :
IXYS
Pin Count :
3
Mount :
Through Hole
Transistor Application :
AMPLIFIER
Qualification Status :
Not Qualified
RoHS :
Details
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Drain to Source Voltage (Vdss) :
100V
RoHS Status :
ROHS3 Compliant
Case Connection :
DRAIN
ECCN Code :
EAR99
Series :
Linear L2™
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Transistor Polarity :
N-Channel
Maximum Operating Temperature :
+ 150 C
Product Category :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
8100pF @ 25V
Datasheets
IXTH75N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH75N10 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, IXTH75N10 pinout, IXTH75N10 datasheet PDF, IXTH75N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH75N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH75N10


N-Channel Tube 21m Ω @ 500mA, 10V ±20V 8100pF @ 25V 215nC @ 10V 100V TO-247-3

IXTH75N10L2 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 75A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 225A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTH75N10L2 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 100V voltage
based on its rated peak drain current 225A.
a 100V drain to source voltage (Vdss)


IXTH75N10L2 Applications


There are a lot of IXYS
IXTH75N10L2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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