IXTH6N150
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- Mfr.Part #
- IXTH6N150
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 6A TO247
- Stock
- 45,130
- In Stock ：
- 45,130
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- Operating Temperature :
- -55°C~150°C TJ
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Brand :
- IXYS
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Channel Mode :
- Enhancement
- RoHS Status :
- ROHS3 Compliant
- Minimum Operating Temperature :
- - 55 C
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Power Dissipation-Max :
- 540W Tc
- Terminal Position :
- Single
- Number of Pins :
- 3
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 3.5 Ω @ 500mA, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Additional Feature :
- AVALANCHE RATED
- Packaging :
- Tube
- RoHS :
- Details
- Gate Charge (Qg) (Max) @ Vgs :
- 67nC @ 10V
- Qualification Status :
- Not Qualified
- Product :
- Power MOSFETs
- Product Type :
- MOSFET
- Package / Case :
- TO-247-3
- Product Status :
- Active
- Base Product Number :
- IXTH6
- Reach Compliance Code :
- Unknown
- Drain Current-Max (Abs) (ID) :
- 6A
- Number of Channels :
- 1 Channel
- Transistor Polarity :
- N-Channel
- Rise Time :
- 20 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Transistor Application :
- SWITCHING
- Maximum Operating Temperature :
- + 150 C
- Published :
- 2012
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- Through Hole
- DS Breakdown Voltage-Min :
- 1500V
- Type :
- High Voltage Power MOSFET
- Series :
- --
- Mounting Type :
- Through Hole
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-247 (IXTH)
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 1500V
- Power Dissipation (Max) :
- 540W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 24A
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Package :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 2230pF @ 25V
- Product Category :
- MOSFET
- Continuous Drain Current (ID) :
- 6A
- Datasheets
- IXTH6N150
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N-Channel Tube 3.5 Ω @ 500mA, 10V ±20V 2230pF @ 25V 67nC @ 10V 1500V TO-247-3
IXTH6N150 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2230pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Peak drain current is 24A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 1500V.For this transistor to work, a voltage 1500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTH6N150 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 6A
based on its rated peak drain current 24A.
a 1500V drain to source voltage (Vdss)
IXTH6N150 Applications
There are a lot of IXYS
IXTH6N150 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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