IXTH67N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

25mOhm

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Supplier Device Package :

TO-247 (IXTH)

Brand :

IXYS

JEDEC-95 Code :

TO-247AD

Channel Mode :

Enhancement

Qualification Status :

Not Qualified

Number of Pins :

3

Manufacturer :

IXYS

Turn-Off Delay Time :

100 ns

Voltage - Rated DC :

100V

DS Breakdown Voltage-Min :

100 V

Base Product Number :

IXTH67

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

67A

Product Status :

Not For New Designs

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Rise Time :

60ns

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

±20V

Case Connection :

DRAIN

Package / Case :

TO-247-3

Series :

MegaMOS™

Drain to Source Breakdown Voltage :

100V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max (Abs) :

250 W

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Type :

1 N-Channel

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Package :

Tube

Power Dissipation :

300W

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

300W Tc

Mounting Style :

Through Hole

Pin Count :

3

Reach Compliance Code :

Compliant

Lead Free :

Lead Free

Number of Terminations :

3

Maximum Operating Temperature :

+ 150 C

Product Type :

MOSFET

Pulsed Drain Current-Max (IDM) :

268A

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

4V @ 4mA

Power Dissipation Ambient-Max :

300 W

Height :

21.46 mm

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1 Channel

RoHS :

Details

Number of Terminals :

3

Terminal Form :

THROUGH-HOLE

FET Feature :

--

Length :

16.26 mm

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

Configuration :

Single

Terminal Position :

Single

Product Category :

MOSFET

Number of Elements :

1

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

300W (Tc)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Packaging :

Tube

Element Configuration :

Single

Width :

5.3 mm

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.025 Ω

Fall Time (Typ) :

30 ns

Published :

2003

Current Rating :

67A

Moisture Sensitivity Level (MSL) :

Not Applicable

Rds On (Max) @ Id, Vgs :

25m Ω @ 33.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Drain Current-Max (Abs) (ID) :

67 A