IXTH50P085

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Mfr.Part #
IXTH50P085
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET P-CH 85V 50A TO247
Stock
9,105
In Stock :
9,105

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Manufacturer :
IXYS Corporation
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
JESD-30 Code :
R-PSFM-T3
Mount :
Through Hole
Supplier Device Package :
TO-247 (IXTH)
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
50A
Power Dissipation :
300W
Turn-Off Delay Time :
86 ns
JEDEC-95 Code :
TO-247AD
Packaging :
Tube
Radiation Hardening :
No
Number of Pins :
3
Peak Reflow Temperature (Cel) :
Not Applicable
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 25V
Lead Free :
Lead Free
Power Dissipation (Max) :
300W (Tc)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain-source On Resistance-Max :
0.055 Ω
Terminal Position :
Single
Pulsed Drain Current-Max (IDM) :
200A
Reach Compliance Code :
not_compliant
ECCN Code :
EAR99
Drain to Source Voltage (Vdss) :
85V
Series :
--
Number of Elements :
1
Base Product Number :
IXTH50
Fall Time (Typ) :
38 ns
Qualification Status :
Not Qualified
Number of Terminals :
3
Surface Mount :
No
Mounting Type :
Through Hole
Voltage - Rated DC :
-85V
JESD-609 Code :
e3
Published :
2004
Pbfree Code :
yes
RoHS Status :
RoHS Compliant
Package Shape :
RECTANGULAR
Drain to Source Breakdown Voltage :
-85V
Number of Terminations :
3
Power Dissipation-Max :
300W Tc
Element Configuration :
Single
Additional Feature :
AVALANCHE RATED
Terminal Form :
THROUGH-HOLE
FET Type :
P-Channel
Operating Mode :
ENHANCEMENT MODE
Rise Time :
39ns
Vgs (Max) :
±20V
FET Feature :
--
Package / Case :
TO-247-3
Polarity/Channel Type :
P-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
DS Breakdown Voltage-Min :
85 V
Resistance :
55mOhm
Transistor Application :
SWITCHING
Case Connection :
DRAIN
Package :
Tube
Transistor Element Material :
SILICON
Product Status :
Obsolete
Current Rating :
-50A
Factory Lead Time :
8 Weeks
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Finish :
Tin (Sn)
Rds On (Max) @ Id, Vgs :
55m Ω @ 25A, 10V
Moisture Sensitivity Level (MSL) :
Not Applicable
Vgs(th) (Max) @ Id :
5V @ 250μA
Datasheets
IXTH50P085
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH50P085 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-247-3, IXTH50P085 pinout, IXTH50P085 datasheet PDF, IXTH50P085 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH50P085 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH50P085


P-Channel Tube 55m Ω @ 25A, 10V ±20V 4200pF @ 25V 150nC @ 10V 85V TO-247-3

IXTH50P085 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4200pF @ 25V.This device has a continuous drain current (ID) of [50A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-85V, the drain-source breakdown voltage is -85V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 86 ns.A maximum pulsed drain current of 200A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 85 V.In order to operate this transistor, a voltage of 85V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTH50P085 Features


a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of -85V voltage
the turn-off delay time is 86 ns
based on its rated peak drain current 200A.
a 85V drain to source voltage (Vdss)


IXTH50P085 Applications


There are a lot of IXYS
IXTH50P085 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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