IXTH50N30
- Mfr.Part #
- IXTH50N30
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 50A TO247
- Stock
- 16,886
- In Stock :
- 16,886
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Compliant
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 25A, 10V
- Number of Terminals :
- 3
- Drain-source On Resistance-Max :
- 0.065Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 33ns
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 400W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 4400pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- JESD-609 Code :
- e1
- Manufacturer :
- IXYS Corporation
- Continuous Drain Current (ID) :
- 50A
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 200A
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tube
- Pin Count :
- 3
- FET Feature :
- --
- Power Dissipation :
- 400W
- JEDEC-95 Code :
- TO-247AD
- Turn-Off Delay Time :
- 70 ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mount :
- Through Hole
- Surface Mount :
- No
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 300V
- Polarity/Channel Type :
- N-Channel
- Series :
- --
- Gate Charge (Qg) (Max) @ Vgs :
- 165nC @ 10V
- Fall Time (Typ) :
- 17 ns
- Vgs (Max) :
- ±30V
- Package Shape :
- RECTANGULAR
- Terminal Form :
- THROUGH-HOLE
- Published :
- 2003
- DS Breakdown Voltage-Min :
- 300 V
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSIP-T3
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 300V
- Radiation Hardening :
- No
- Package / Case :
- TO-247-3
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Supplier Device Package :
- TO-247 (IXTH)
- Power Dissipation (Max) :
- 400W (Tc)
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXTH50
- Product Status :
- Active
- Transistor Element Material :
- SILICON
- Datasheets
- IXTH50N30
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N-Channel Tube 65m Ω @ 25A, 10V ±30V 4400pF @ 25V 165nC @ 10V 300V TO-247-3
IXTH50N30 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.With a drain-source breakdown voltage of 300V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 300V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 70 ns.Peak drain current for this device is 200A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 300 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTH50N30 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 200A.
a 300V drain to source voltage (Vdss)
IXTH50N30 Applications
There are a lot of IXYS
IXTH50N30 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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