IXTH50N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

50A

Drain to Source Voltage (Vdss) :

200V

Length :

16.26 mm

Resistance :

45mOhm

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

THROUGH-HOLE

Pbfree Code :

yes

Power Dissipation :

300W

Power Dissipation-Max (Abs) :

250 W

Number of Terminals :

3

RoHS :

Details

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

200 V

Configuration :

Single

Product Category :

MOSFET

Drain to Source Breakdown Voltage :

200V

Transistor Polarity :

N-Channel

Current Rating :

50A

Terminal Position :

Single

Width :

5.3 mm

Power Dissipation-Max :

300W Tc

Manufacturer :

IXYS

Qualification Status :

Not Qualified

Mount :

Through Hole

Maximum Operating Temperature :

+ 150 C

Element Configuration :

Single

FET Feature :

--

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

200A

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

50 A

Brand :

IXYS

Drain-source On Resistance-Max :

0.045 Ω

Power Dissipation (Max) :

300W (Tc)

Published :

2000

Supplier Device Package :

TO-247 (IXTH)

Pin Count :

3

Number of Pins :

3

Rise Time :

15ns

Channel Mode :

Enhancement

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Minimum Operating Temperature :

- 55 C

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

Package Shape :

RECTANGULAR

Power Dissipation Ambient-Max :

300 W

Nominal Vgs :

4 V

Fall Time (Typ) :

16 ns

Product Status :

Active

Lead Free :

Lead Free

Package / Case :

TO-247-3

Turn-Off Delay Time :

72 ns

Vgs (Max) :

±20V

Base Product Number :

IXTH50

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

FET Type :

N-Channel

Transistor Element Material :

SILICON

Mounting Style :

Through Hole

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

4600pF @ 25V

Package :

Tube

Dual Supply Voltage :

200V

Radiation Hardening :

No

REACH SVHC :

No SVHC

JESD-30 Code :

R-PSFM-T3

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

Height :

21.46 mm

Threshold Voltage :

4V

JEDEC-95 Code :

TO-247AD

Product Type :

MOSFET

Number of Terminations :

3

Voltage - Rated DC :

200V

Factory Lead Time :

28 Weeks

Packaging :

Tube

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

MegaMOS™

Transistor Application :

SWITCHING