IXTH48N20

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Mfr.Part #
IXTH48N20
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 48A TO247
Stock
10,377
In Stock :
10,377

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Category :
MOSFET
Rds On (Max) @ Id, Vgs :
50m Ω @ 15A, 10V
Vgs (Max) :
±20V
Mount :
Through Hole
Surface Mount :
No
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Number of Terminals :
3
Vgs(th) (Max) @ Id :
4V @ 250µA
Reach Compliance Code :
Compliant
Subcategory :
MOSFETs
Package Shape :
RECTANGULAR
Product Status :
Active
Pulsed Drain Current-Max (IDM) :
192A
Minimum Operating Temperature :
- 55 C
Configuration :
Single
Drain to Source Breakdown Voltage :
200V
Package :
Tube
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 25V
Transistor Element Material :
SILICON
Width :
5.3 mm
Maximum Operating Temperature :
+ 150 C
Polarity/Channel Type :
N-Channel
Avalanche Energy Rating (Eas) :
1000 mJ
Length :
16.26 mm
Rise Time :
19ns
Number of Channels :
1 Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
200V
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Series :
--
Product Type :
MOSFET
Power Dissipation :
275W
Channel Mode :
Enhancement
Transistor Polarity :
N-Channel
Drain-source On Resistance-Max :
0.05Ohm
Pin Count :
3
Terminal Position :
Single
DS Breakdown Voltage-Min :
200 V
Power Dissipation (Max) :
275W (Tc)
RoHS :
Details
Mounting Style :
Through Hole
Power Dissipation-Max :
275W Tc
Number of Elements :
1
JEDEC-95 Code :
TO-247AD
Gate to Source Voltage (Vgs) :
20V
Terminal Form :
THROUGH-HOLE
Package / Case :
TO-247-3
Published :
2003
Case Connection :
DRAIN
Supplier Device Package :
TO-247 (IXTH)
JESD-30 Code :
R-PSFM-T3
Brand :
IXYS
FET Type :
N-Channel
Transistor Type :
1 N-Channel
Qualification Status :
Not Qualified
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
48A Tc
Base Product Number :
IXTH48
Continuous Drain Current (ID) :
48A
Fall Time (Typ) :
17 ns
Height :
21.46 mm
FET Feature :
--
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Manufacturer :
IXYS
Number of Pins :
3
Turn-Off Delay Time :
79 ns
Packaging :
Tube
ECCN Code :
EAR99
Element Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Datasheets
IXTH48N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH48N20 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, IXTH48N20 pinout, IXTH48N20 datasheet PDF, IXTH48N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH48N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH48N20


N-Channel Tube 50m Ω @ 15A, 10V ±20V 3000pF @ 25V 110nC @ 10V 200V TO-247-3

IXTH48N20 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.As a result of its turn-off delay time, which is 79 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 192A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTH48N20 Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 192A.
a 200V drain to source voltage (Vdss)


IXTH48N20 Applications


There are a lot of IXYS
IXTH48N20 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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