IXTH450P2
- Mfr.Part #
- IXTH450P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO247
- Stock
- 122
- In Stock :
- 122
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- DS Breakdown Voltage-Min :
- 500 V
- Packaging :
- Tube
- Tradename :
- Polar2 HiPerFET
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Number of Channels :
- 1 Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2530pF @ 25V
- Product Type :
- MOSFET
- Case Connection :
- DRAIN
- Channel Mode :
- Enhancement
- Drain-source On Resistance-Max :
- 0.33Ohm
- Pbfree Code :
- yes
- Number of Terminals :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Reach Compliance Code :
- Compliant
- RoHS :
- Details
- Base Product Number :
- IXTH450
- Product Status :
- Active
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Power Dissipation :
- 300W
- Drain to Source Voltage (Vdss) :
- 500V
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±30V
- Terminal Form :
- THROUGH-HOLE
- Gate to Source Voltage (Vgs) :
- 30V
- Element Configuration :
- Single
- Power Dissipation (Max) :
- 300W (Tc)
- Continuous Drain Current (ID) :
- 16A
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 330m Ω @ 8A, 10V
- Series :
- PolarP2™
- JEDEC-95 Code :
- TO-247
- Drain to Source Breakdown Voltage :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Manufacturer :
- IXYS
- Package Shape :
- RECTANGULAR
- Brand :
- IXYS
- Mounting Style :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Transistor Type :
- 1 N-Channel
- Factory Lead Time :
- 28 Weeks
- Power Dissipation-Max (Abs) :
- 300 W
- Pin Count :
- 3
- Transistor Polarity :
- N-Channel
- JESD-609 Code :
- e1
- Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSFM-T3
- Surface Mount :
- No
- Power Dissipation-Max :
- 300W Tc
- FET Feature :
- --
- Supplier Device Package :
- TO-247 (IXTH)
- Operating Mode :
- ENHANCEMENT MODE
- Maximum Operating Temperature :
- + 150 C
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Radiation Hardening :
- No
- Published :
- 2011
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 35A
- Product Category :
- MOSFET
- Terminal Position :
- Single
- Type :
- PolarP2 Power MOSFET
- Drain Current-Max (Abs) (ID) :
- 16 A
- Package / Case :
- TO-247-3
- Datasheets
- IXTH450P2
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N-Channel Tube 330m Ω @ 8A, 10V ±30V 2530pF @ 25V 43nC @ 10V 500V TO-247-3
IXTH450P2 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2530pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 16A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.16 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 35A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTH450P2 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 35A.
a 500V drain to source voltage (Vdss)
IXTH450P2 Applications
There are a lot of IXYS
IXTH450P2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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