IXTH41N25

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Mfr.Part #
IXTH41N25
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 250V 41A TO247
Stock
34,097
In Stock :
34,097

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
-
Mounting Style :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
ECCN Code :
EAR99
Pin Count :
3
Reach Compliance Code :
Compliant
Number of Elements :
1
Base Product Number :
IXTH41
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code :
TO-247AD
DS Breakdown Voltage-Min :
250 V
Subcategory :
MOSFETs
Mount :
Through Hole
Number of Pins :
3
Configuration :
Single
Supplier Device Package :
TO-247 (IXTH)
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 250µA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
250V
Published :
2003
Product Category :
MOSFET
Mounting Type :
Through Hole
Manufacturer :
IXYS
Series :
-
Terminal Form :
THROUGH-HOLE
Package :
Tube
Product Type :
MOSFET
Transistor Application :
SWITCHING
Qualification Status :
Not Qualified
Transistor Type :
1 N-Channel
Package / Case :
TO-247-3
Vgs (Max) :
±20V
Element Configuration :
Single
Number of Channels :
1 Channel
Brand :
IXYS
Transistor Polarity :
N-Channel
Number of Terminals :
3
Width :
5.3 mm
Input Capacitance (Ciss) (Max) @ Vds :
3200pF @ 25V
Rds On (Max) @ Id, Vgs :
72m Ω @ 15A, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
41A Tc
Pulsed Drain Current-Max (IDM) :
164A
Transistor Element Material :
SILICON
Package Shape :
RECTANGULAR
Avalanche Energy Rating (Eas) :
1000 mJ
Product Status :
Active
Power Dissipation :
300W
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Drain-source On Resistance-Max :
0.072Ohm
Channel Mode :
Enhancement
Pbfree Code :
yes
Turn-Off Delay Time :
79 ns
Operating Temperature :
-55°C~150°C TJ
Rise Time :
19ns
RoHS :
Details
Length :
16.26 mm
Power Dissipation-Max :
300W Tc
Minimum Operating Temperature :
- 55 C
Power Dissipation (Max) :
300W (Tc)
JESD-30 Code :
R-PSFM-T3
Gate to Source Voltage (Vgs) :
20V
Terminal Position :
Single
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Polarity/Channel Type :
N-Channel
Case Connection :
DRAIN
Maximum Operating Temperature :
+ 150 C
Drain to Source Voltage (Vdss) :
250V
Fall Time (Typ) :
17 ns
Height :
21.46 mm
Continuous Drain Current (ID) :
41A
Datasheets
IXTH41N25
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH41N25 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXTH41N25 pinout, IXTH41N25 datasheet PDF, IXTH41N25 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH41N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH41N25


N-Channel Tube 72m Ω @ 15A, 10V ±20V 3200pF @ 25V 110nC @ 10V 250V TO-247-3

IXTH41N25 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 3200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 41A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 79 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 164A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250 V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTH41N25 Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 164A.
a 250V drain to source voltage (Vdss)


IXTH41N25 Applications


There are a lot of IXYS
IXTH41N25 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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