IXTH41N25
- Mfr.Part #
- IXTH41N25
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 41A TO247
- Stock
- 34,097
- In Stock :
- 34,097
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- -
- Mounting Style :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Reach Compliance Code :
- Compliant
- Number of Elements :
- 1
- Base Product Number :
- IXTH41
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JEDEC-95 Code :
- TO-247AD
- DS Breakdown Voltage-Min :
- 250 V
- Subcategory :
- MOSFETs
- Mount :
- Through Hole
- Number of Pins :
- 3
- Configuration :
- Single
- Supplier Device Package :
- TO-247 (IXTH)
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 250V
- Published :
- 2003
- Product Category :
- MOSFET
- Mounting Type :
- Through Hole
- Manufacturer :
- IXYS
- Series :
- -
- Terminal Form :
- THROUGH-HOLE
- Package :
- Tube
- Product Type :
- MOSFET
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Transistor Type :
- 1 N-Channel
- Package / Case :
- TO-247-3
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Number of Channels :
- 1 Channel
- Brand :
- IXYS
- Transistor Polarity :
- N-Channel
- Number of Terminals :
- 3
- Width :
- 5.3 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3200pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 72m Ω @ 15A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Pulsed Drain Current-Max (IDM) :
- 164A
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Product Status :
- Active
- Power Dissipation :
- 300W
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 0.072Ohm
- Channel Mode :
- Enhancement
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 79 ns
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 19ns
- RoHS :
- Details
- Length :
- 16.26 mm
- Power Dissipation-Max :
- 300W Tc
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation (Max) :
- 300W (Tc)
- JESD-30 Code :
- R-PSFM-T3
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- DRAIN
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Voltage (Vdss) :
- 250V
- Fall Time (Typ) :
- 17 ns
- Height :
- 21.46 mm
- Continuous Drain Current (ID) :
- 41A
- Datasheets
- IXTH41N25
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N-Channel Tube 72m Ω @ 15A, 10V ±20V 3200pF @ 25V 110nC @ 10V 250V TO-247-3
IXTH41N25 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 3200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 41A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 79 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 164A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250 V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTH41N25 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 164A.
a 250V drain to source voltage (Vdss)
IXTH41N25 Applications
There are a lot of IXYS
IXTH41N25 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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