IXTH3N150
- Mfr.Part #
- IXTH3N150
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 3A TO247
- Stock
- 41,391
- In Stock :
- 41,391
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Mount :
- Through Hole
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 7.3 Ω @ 1.5A, 10V
- Transistor Polarity :
- N-Channel
- Continuous Drain Current (ID) :
- 3A
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 250W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Active
- RoHS :
- Details
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Mounting Style :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- TO-247 (IXTH)
- Package / Case :
- TO-247-3
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 1500V
- Minimum Operating Temperature :
- - 55 C
- JEDEC-95 Code :
- TO-247AD
- Maximum Operating Temperature :
- + 150 C
- Operating Temperature :
- -55°C~150°C TJ
- DS Breakdown Voltage-Min :
- 1500V
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 38.6nC @ 10V
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 3A
- FET Feature :
- --
- Published :
- 2012
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Series :
- --
- Transistor Type :
- 1 N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Type :
- MOSFET
- Number of Channels :
- 1 Channel
- Base Product Number :
- IXTH3
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 250W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1375pF @ 25V
- Package :
- Tube
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±30V
- Pulsed Drain Current-Max (IDM) :
- 9A
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 28 Weeks
- Datasheets
- IXTH3N150
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N-Channel Tube 7.3 Ω @ 1.5A, 10V ±30V 1375pF @ 25V 38.6nC @ 10V 1500V TO-247-3
IXTH3N150 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 250 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1375pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3A.3A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 9A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1500V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTH3N150 Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 3A
based on its rated peak drain current 9A.
a 1500V drain to source voltage (Vdss)
IXTH3N150 Applications
There are a lot of IXYS
IXTH3N150 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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