IXTH36N50P

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Mfr.Part #
IXTH36N50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 36A TO247
Stock
108
In Stock :
108

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Number of Elements :
1
Nominal Vgs :
5 V
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Qualification :
-
Mounting Type :
Through Hole
Surface Mount :
No
Package / Case :
TO-247-3
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
30V
Additional Feature :
AVALANCHE RATED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Minimum Operating Temperature :
- 55 C
Number of Terminations :
3
Drain-source On Resistance-Max :
0.17 Ω
Series :
PolarHV™
Rise Time :
27ns
Transistor Polarity :
N-Channel
Threshold Voltage :
5V
Power Dissipation (Max) :
540W (Tc)
Power Dissipation :
540W
Width :
5.3 mm
Polarity/Channel Type :
N-Channel
Qualification Status :
Not Qualified
Fall Time (Typ) :
21 ns
REACH SVHC :
No SVHC
Drain to Source Voltage (Vdss) :
500V
Turn-Off Delay Time :
75 ns
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Operating Temperature :
-55°C~150°C TJ
Avalanche Energy Rating (Eas) :
1500 mJ
Configuration :
Single
Continuous Drain Current (ID) :
36A
Transistor Type :
1 N-Channel
Maximum Operating Temperature :
+ 150 C
Base Product Number :
IXTH36
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Package Shape :
RECTANGULAR
ECCN Code :
EAR99
Product Category :
MOSFET
Length :
16.26 mm
JESD-609 Code :
e1
Terminal Form :
THROUGH-HOLE
Lead Free :
Lead Free
Brand :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
DS Breakdown Voltage-Min :
500 V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Through Hole
Resistance :
170mOhm
Tradename :
PolarHV
Vgs(th) (Max) @ Id :
5V @ 250μA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
DRAIN
Power Dissipation-Max :
540W Tc
Supplier Device Package :
TO-247 (IXTH)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Status :
Active
Channel Mode :
Enhancement
Mounting Style :
Through Hole
RoHS :
Details
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
JEDEC-95 Code :
TO-247AD
Number of Terminals :
3
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
Continuous Drain Current Id :
36A
Drain to Source Breakdown Voltage :
500V
Pin Count :
3
Terminal Position :
Single
Channel Type :
N Channel
Number of Pins :
3
Manufacturer :
IXYS
Height :
21.46 mm
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
170m Ω @ 500mA, 10V
Current Rating :
36A
Package :
Tube
JESD-30 Code :
R-PSFM-T3
Voltage - Rated DC :
500V
Product Type :
MOSFET
Pulsed Drain Current-Max (IDM) :
108A
Published :
2006
Type :
PolarHV Power MOSFET
Operating Mode :
ENHANCEMENT MODE
Number of Channels :
1 Channel
Vgs (Max) :
±30V
FET Feature :
--
Subcategory :
MOSFETs
MSL :
-
Datasheets
IXTH36N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH36N50P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Type:PolarHV Power MOSFET, Number of Channels:1 Channel, IXTH36N50P pinout, IXTH36N50P datasheet PDF, IXTH36N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH36N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH36N50P


N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 85nC @ 10V 500V TO-247-3

IXTH36N50P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5500pF @ 25V.This device has a continuous drain current (ID) of [36A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 108A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTH36N50P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IXTH36N50P Applications


There are a lot of IXYS
IXTH36N50P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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