IXTH36N50P
- Mfr.Part #
- IXTH36N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 36A TO247
- Stock
- 108
- In Stock :
- 108
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Nominal Vgs :
- 5 V
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Qualification :
- -
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Package / Case :
- TO-247-3
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 30V
- Additional Feature :
- AVALANCHE RATED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Minimum Operating Temperature :
- - 55 C
- Number of Terminations :
- 3
- Drain-source On Resistance-Max :
- 0.17 Ω
- Series :
- PolarHV™
- Rise Time :
- 27ns
- Transistor Polarity :
- N-Channel
- Threshold Voltage :
- 5V
- Power Dissipation (Max) :
- 540W (Tc)
- Power Dissipation :
- 540W
- Width :
- 5.3 mm
- Polarity/Channel Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Fall Time (Typ) :
- 21 ns
- REACH SVHC :
- No SVHC
- Drain to Source Voltage (Vdss) :
- 500V
- Turn-Off Delay Time :
- 75 ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Configuration :
- Single
- Continuous Drain Current (ID) :
- 36A
- Transistor Type :
- 1 N-Channel
- Maximum Operating Temperature :
- + 150 C
- Base Product Number :
- IXTH36
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Package Shape :
- RECTANGULAR
- ECCN Code :
- EAR99
- Product Category :
- MOSFET
- Length :
- 16.26 mm
- JESD-609 Code :
- e1
- Terminal Form :
- THROUGH-HOLE
- Lead Free :
- Lead Free
- Brand :
- IXYS
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- DS Breakdown Voltage-Min :
- 500 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Through Hole
- Resistance :
- 170mOhm
- Tradename :
- PolarHV
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 540W Tc
- Supplier Device Package :
- TO-247 (IXTH)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Active
- Channel Mode :
- Enhancement
- Mounting Style :
- Through Hole
- RoHS :
- Details
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-247AD
- Number of Terminals :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- Continuous Drain Current Id :
- 36A
- Drain to Source Breakdown Voltage :
- 500V
- Pin Count :
- 3
- Terminal Position :
- Single
- Channel Type :
- N Channel
- Number of Pins :
- 3
- Manufacturer :
- IXYS
- Height :
- 21.46 mm
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 500mA, 10V
- Current Rating :
- 36A
- Package :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Voltage - Rated DC :
- 500V
- Product Type :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 108A
- Published :
- 2006
- Type :
- PolarHV Power MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1 Channel
- Vgs (Max) :
- ±30V
- FET Feature :
- --
- Subcategory :
- MOSFETs
- MSL :
- -
- Datasheets
- IXTH36N50P
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N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 85nC @ 10V 500V TO-247-3
IXTH36N50P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5500pF @ 25V.This device has a continuous drain current (ID) of [36A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 108A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTH36N50P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IXTH36N50P Applications
There are a lot of IXYS
IXTH36N50P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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