IXTH32P20T
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- Mfr.Part #
- IXTH32P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 32A TO247
- Stock
- 44,371
- In Stock ：
- 44,371
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pin Count :
- 3
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 32A
- Manufacturer :
- IXYS
- Base Product Number :
- IXTH32
- Terminal Position :
- Single
- Transistor Polarity :
- P-Channel
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS :
- Details
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Feature :
- --
- Mounting Style :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 200V
- Polarity/Channel Type :
- P-Channel
- Package Shape :
- RECTANGULAR
- Brand :
- IXYS
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 300W Tc
- Product Type :
- MOSFET
- FET Type :
- P-Channel
- Factory Lead Time :
- 28 Weeks
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 16A, 10V
- Number of Elements :
- 1
- Series :
- TrenchP™
- Published :
- 2010
- Drain Current-Max (Abs) (ID) :
- 32 A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminals :
- 3
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- TO-247 (IXTH)
- Terminal Form :
- THROUGH-HOLE
- Pulsed Drain Current-Max (IDM) :
- 96A
- Power Dissipation (Max) :
- 300W (Tc)
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Tube
- Drain-source On Resistance-Max :
- 0.13Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Surface Mount :
- No
- Vgs (Max) :
- ±15V
- DS Breakdown Voltage-Min :
- 200V
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Compliant
- JEDEC-95 Code :
- TO-247AD
- Package / Case :
- TO-247-3
- Power Dissipation-Max (Abs) :
- 300 W
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- Product Category :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 14500pF @ 25V
- Datasheets
- IXTH32P20T
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P-Channel Tube 130m Ω @ 16A, 10V ±15V 14500pF @ 25V 185nC @ 10V 200V TO-247-3
IXTH32P20T Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 14500pF @ 25V.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 32 A.Pulsed drain current is maximum rated peak drain current 96A.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTH32P20T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 32A
based on its rated peak drain current 96A.
a 200V drain to source voltage (Vdss)
IXTH32P20T Applications
There are a lot of IXYS
IXTH32P20T applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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