IXTH30N50P
- Mfr.Part #
- IXTH30N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A TO247
- Stock
- 30
- In Stock :
- 30
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 16.26 mm
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 30A
- Number of Terminations :
- 3
- Brand :
- IXYS
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Channel Mode :
- Enhancement
- FET Feature :
- --
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 15A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Product Category :
- MOSFET
- Surface Mount :
- No
- Power Dissipation (Max) :
- 460W (Tc)
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- Type :
- PolarHV Power MOSFET
- Subcategory :
- MOSFETs
- Pin Count :
- 3
- Minimum Operating Temperature :
- - 55 C
- Drain to Source Voltage (Vdss) :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2006
- Mounting Style :
- Through Hole
- Width :
- 5.3 mm
- Terminal Position :
- Single
- Terminal Form :
- THROUGH-HOLE
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 28 Weeks
- Drain to Source Breakdown Voltage :
- 500V
- Package :
- Tube
- Number of Terminals :
- 3
- Pbfree Code :
- yes
- Height :
- 21.46 mm
- Vgs (Max) :
- ±30V
- Rise Time :
- 27ns
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-3
- Number of Pins :
- 3
- Manufacturer :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 75A
- Current Rating :
- 30A
- Base Product Number :
- IXTH30
- Drain-source On Resistance-Max :
- 0.2Ohm
- Power Dissipation-Max :
- 460W Tc
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 75 ns
- Series :
- PolarHV™
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 21 ns
- Product Type :
- MOSFET
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 500 V
- RoHS Status :
- ROHS3 Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Transistor Polarity :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-247AD
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Maximum Operating Temperature :
- + 150 C
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Voltage - Rated DC :
- 500V
- Packaging :
- Tube
- RoHS :
- Details
- Number of Elements :
- 1
- Tradename :
- PolarHV
- Transistor Type :
- 1 N-Channel
- Product Status :
- Active
- Supplier Device Package :
- TO-247 (IXTH)
- Power Dissipation :
- 460W
- Package Shape :
- RECTANGULAR
- Datasheets
- IXTH30N50P
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N-Channel Tube 200m Ω @ 15A, 10V ±30V 4150pF @ 25V 70nC @ 10V 500V TO-247-3
IXTH30N50P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4150pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 75A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTH30N50P Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 75A.
a 500V drain to source voltage (Vdss)
IXTH30N50P Applications
There are a lot of IXYS
IXTH30N50P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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