IXTH30N50P

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Mfr.Part #
IXTH30N50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 30A TO247
Stock
30
In Stock :
30

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
16.26 mm
Gate to Source Voltage (Vgs) :
30V
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
30A
Number of Terminations :
3
Brand :
IXYS
Transistor Application :
SWITCHING
Mount :
Through Hole
FET Type :
N-Channel
Channel Mode :
Enhancement
FET Feature :
--
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
200m Ω @ 15A, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Product Category :
MOSFET
Surface Mount :
No
Power Dissipation (Max) :
460W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
4150pF @ 25V
Type :
PolarHV Power MOSFET
Subcategory :
MOSFETs
Pin Count :
3
Minimum Operating Temperature :
- 55 C
Drain to Source Voltage (Vdss) :
500V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2006
Mounting Style :
Through Hole
Width :
5.3 mm
Terminal Position :
Single
Terminal Form :
THROUGH-HOLE
Transistor Element Material :
SILICON
Factory Lead Time :
28 Weeks
Drain to Source Breakdown Voltage :
500V
Package :
Tube
Number of Terminals :
3
Pbfree Code :
yes
Height :
21.46 mm
Vgs (Max) :
±30V
Rise Time :
27ns
Number of Channels :
1 Channel
Package / Case :
TO-247-3
Number of Pins :
3
Manufacturer :
IXYS
Pulsed Drain Current-Max (IDM) :
75A
Current Rating :
30A
Base Product Number :
IXTH30
Drain-source On Resistance-Max :
0.2Ohm
Power Dissipation-Max :
460W Tc
Configuration :
Single
Qualification Status :
Not Qualified
Turn-Off Delay Time :
75 ns
Series :
PolarHV™
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
21 ns
Product Type :
MOSFET
Case Connection :
DRAIN
DS Breakdown Voltage-Min :
500 V
RoHS Status :
ROHS3 Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Transistor Polarity :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JEDEC-95 Code :
TO-247AD
Vgs(th) (Max) @ Id :
5V @ 250μA
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
Compliant
Maximum Operating Temperature :
+ 150 C
Element Configuration :
Single
Avalanche Energy Rating (Eas) :
1200 mJ
Voltage - Rated DC :
500V
Packaging :
Tube
RoHS :
Details
Number of Elements :
1
Tradename :
PolarHV
Transistor Type :
1 N-Channel
Product Status :
Active
Supplier Device Package :
TO-247 (IXTH)
Power Dissipation :
460W
Package Shape :
RECTANGULAR
Datasheets
IXTH30N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH30N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Type:PolarHV Power MOSFET, Number of Channels:1 Channel, Package / Case:TO-247-3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXTH30N50P pinout, IXTH30N50P datasheet PDF, IXTH30N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH30N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH30N50P


N-Channel Tube 200m Ω @ 15A, 10V ±30V 4150pF @ 25V 70nC @ 10V 500V TO-247-3

IXTH30N50P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4150pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 75A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTH30N50P Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 75A.
a 500V drain to source voltage (Vdss)


IXTH30N50P Applications


There are a lot of IXYS
IXTH30N50P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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