IXTH26P20P
- Mfr.Part #
- IXTH26P20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 26A TO247
- Stock
- 9,173
- In Stock :
- 9,173
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Category :
- MOSFET
- Transistor Type :
- 1 P-Channel
- Fall Time (Typ) :
- 21 ns
- Drain-source On Resistance-Max :
- 0.17Ohm
- Product Type :
- MOSFET
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Max Power Dissipation :
- 300 W
- Supplier Device Package :
- TO-247 (IXTH)
- Continuous Drain Current (ID) :
- 26A
- Rds On Max :
- 170 mΩ
- Reach Compliance Code :
- Unknown
- Pulsed Drain Current-Max (IDM) :
- 70A
- ECCN Code :
- EAR99
- Series :
- PolarP™
- Maximum Operating Temperature :
- + 175 C
- Additional Feature :
- AVALANCHE RATED
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Input Capacitance :
- 2.74 nF
- Drain to Source Breakdown Voltage :
- -200V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Product Status :
- Active
- Drain to Source Voltage (Vdss) :
- 200V
- Factory Lead Time :
- 28 Weeks
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 300W (Tc)
- Number of Channels :
- 1 Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 300W Tc
- JEDEC-95 Code :
- TO-247AD
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-247-3
- Number of Elements :
- 1
- Published :
- 2007
- Brand :
- IXYS
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Max Operating Temperature :
- 175 °C
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Width :
- 5.3 mm
- Manufacturer :
- IXYS
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 33ns
- Length :
- 16.26 mm
- Package :
- Tube
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation :
- 300W
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Vgs (Max) :
- ±20V
- Transistor Polarity :
- P-Channel
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 2740pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- RoHS :
- Compliant
- Element Configuration :
- Single
- Min Operating Temperature :
- -55 °C
- FET Feature :
- --
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 13A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Channel Mode :
- Enhancement
- Drain to Source Resistance :
- 170 mΩ
- Height :
- 21.46 mm
- Base Product Number :
- IXTH26
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Case Connection :
- DRAIN
- FET Type :
- P-Channel
- Mounting Style :
- Through Hole
- Turn-Off Delay Time :
- 46 ns
- Datasheets
- IXTH26P20P
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P-Channel Tube 170m Ω @ 13A, 10V ±20V 2740pF @ 25V 56nC @ 10V 200V TO-247-3
IXTH26P20P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2740pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 26A.With a drain-source breakdown voltage of -200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 46 ns.Peak drain current for this device is 70A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 170 mΩ exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTH26P20P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 70A.
single MOSFETs transistor is 170 mΩ
a 200V drain to source voltage (Vdss)
IXTH26P20P Applications
There are a lot of IXYS
IXTH26P20P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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