IXTH26N60P
- Mfr.Part #
- IXTH26N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 26A TO247
- Stock
- 1,455
- In Stock :
- 1,455
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2006
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- Height :
- 21.46 mm
- Minimum Operating Temperature :
- - 55 C
- JESD-30 Code :
- R-PSFM-T3
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 500mA, 10V
- Supplier Device Package :
- TO-247 (IXTH)
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 21 ns
- Product Category :
- MOSFET
- Drain to Source Breakdown Voltage :
- 600V
- JEDEC-95 Code :
- TO-247AD
- FET Type :
- N-Channel
- Manufacturer :
- IXYS
- Configuration :
- Single
- Turn-Off Delay Time :
- 75 ns
- Product Status :
- Active
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Continuous Drain Current (ID) :
- 26A
- Package :
- Tube
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Product Type :
- MOSFET
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 27ns
- Type :
- PolarHV Power MOSFET
- Polarity/Channel Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Pin Count :
- 3
- JESD-609 Code :
- e1
- DS Breakdown Voltage-Min :
- 600 V
- Power Dissipation :
- 460W
- Gate to Source Voltage (Vgs) :
- 30V
- Package Shape :
- RECTANGULAR
- Mounting Style :
- Through Hole
- Resistance :
- 270mOhm
- Number of Channels :
- 1 Channel
- Additional Feature :
- AVALANCHE RATED
- Element Configuration :
- Single
- Channel Mode :
- Enhancement
- Power Dissipation (Max) :
- 460W (Tc)
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 65A
- Transistor Type :
- 1 N-Channel
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Terminal Form :
- THROUGH-HOLE
- Tradename :
- PolarHV
- Transistor Polarity :
- N-Channel
- Pbfree Code :
- yes
- RoHS :
- Details
- Number of Terminals :
- 3
- Subcategory :
- MOSFETs
- Series :
- PolarHV™
- Maximum Operating Temperature :
- + 150 C
- Terminal Position :
- Single
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 600V
- Packaging :
- Tube
- Length :
- 16.26 mm
- Voltage - Rated DC :
- 600V
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Brand :
- IXYS
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 460W Tc
- Current Rating :
- 26A
- Package / Case :
- TO-247-3
- Width :
- 5.3 mm
- Base Product Number :
- IXTH26
- FET Feature :
- --
- Reach Compliance Code :
- Compliant
- Drain-source On Resistance-Max :
- 0.27 Ω
- Factory Lead Time :
- 28 Weeks
- Datasheets
- IXTH26N60P
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N-Channel Tube 270m Ω @ 500mA, 10V ±30V 4150pF @ 25V 72nC @ 10V 600V TO-247-3
IXTH26N60P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4150pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 26A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 65A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTH26N60P Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 65A.
a 600V drain to source voltage (Vdss)
IXTH26N60P Applications
There are a lot of IXYS
IXTH26N60P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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