IXTH26N60P

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Mfr.Part #
IXTH26N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 26A TO247
Stock
1,455
In Stock :
1,455

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2006
Operating Temperature :
-55°C~150°C TJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Ciss) (Max) @ Vds :
4150pF @ 25V
Height :
21.46 mm
Minimum Operating Temperature :
- 55 C
JESD-30 Code :
R-PSFM-T3
Surface Mount :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
270m Ω @ 500mA, 10V
Supplier Device Package :
TO-247 (IXTH)
Number of Terminations :
3
Fall Time (Typ) :
21 ns
Product Category :
MOSFET
Drain to Source Breakdown Voltage :
600V
JEDEC-95 Code :
TO-247AD
FET Type :
N-Channel
Manufacturer :
IXYS
Configuration :
Single
Turn-Off Delay Time :
75 ns
Product Status :
Active
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 10V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Continuous Drain Current (ID) :
26A
Package :
Tube
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Vgs(th) (Max) @ Id :
5V @ 250μA
Product Type :
MOSFET
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Rise Time :
27ns
Type :
PolarHV Power MOSFET
Polarity/Channel Type :
N-Channel
Avalanche Energy Rating (Eas) :
1200 mJ
Pin Count :
3
JESD-609 Code :
e1
DS Breakdown Voltage-Min :
600 V
Power Dissipation :
460W
Gate to Source Voltage (Vgs) :
30V
Package Shape :
RECTANGULAR
Mounting Style :
Through Hole
Resistance :
270mOhm
Number of Channels :
1 Channel
Additional Feature :
AVALANCHE RATED
Element Configuration :
Single
Channel Mode :
Enhancement
Power Dissipation (Max) :
460W (Tc)
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
65A
Transistor Type :
1 N-Channel
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Terminal Form :
THROUGH-HOLE
Tradename :
PolarHV
Transistor Polarity :
N-Channel
Pbfree Code :
yes
RoHS :
Details
Number of Terminals :
3
Subcategory :
MOSFETs
Series :
PolarHV™
Maximum Operating Temperature :
+ 150 C
Terminal Position :
Single
Vgs (Max) :
±30V
Drain to Source Voltage (Vdss) :
600V
Packaging :
Tube
Length :
16.26 mm
Voltage - Rated DC :
600V
Mounting Type :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Radiation Hardening :
No
Brand :
IXYS
Qualification Status :
Not Qualified
Lead Free :
Lead Free
Power Dissipation-Max :
460W Tc
Current Rating :
26A
Package / Case :
TO-247-3
Width :
5.3 mm
Base Product Number :
IXTH26
FET Feature :
--
Reach Compliance Code :
Compliant
Drain-source On Resistance-Max :
0.27 Ω
Factory Lead Time :
28 Weeks
Datasheets
IXTH26N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH26N60P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Type:PolarHV Power MOSFET, Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:TO-247-3, IXTH26N60P pinout, IXTH26N60P datasheet PDF, IXTH26N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH26N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH26N60P


N-Channel Tube 270m Ω @ 500mA, 10V ±30V 4150pF @ 25V 72nC @ 10V 600V TO-247-3

IXTH26N60P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4150pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 26A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 65A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTH26N60P Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 65A.
a 600V drain to source voltage (Vdss)


IXTH26N60P Applications


There are a lot of IXYS
IXTH26N60P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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