IXTH22N50P
- Mfr.Part #
- IXTH22N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A TO247
- Stock
- 7,384
- In Stock :
- 7,384
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Channel Mode :
- Enhancement
- Reach Compliance Code :
- Compliant
- Element Configuration :
- Single
- Packaging :
- Tube
- Factory Lead Time :
- 28 Weeks
- FET Feature :
- --
- JESD-30 Code :
- R-PSFM-T3
- Number of Channels :
- 1 Channel
- Power Dissipation-Max (Abs) :
- 350 W
- Transistor Application :
- SWITCHING
- RoHS :
- Details
- Width :
- 5.3 mm
- Height :
- 21.46 mm
- Drain Current-Max (Abs) (ID) :
- 22 A
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Breakdown Voltage :
- 500V
- Base Product Number :
- IXTH22
- Series :
- PolarHV™
- Minimum Operating Temperature :
- - 55 C
- Rise Time :
- 27ns
- FET Type :
- N-Channel
- Supplier Device Package :
- TO-247 (IXTH)
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 11A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2630pF @ 25V
- Product Category :
- MOSFET
- Product Type :
- MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 500V
- Configuration :
- Single
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 350W (Tc)
- Length :
- 16.26 mm
- Mounting Style :
- Through Hole
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Type :
- PolarHV Power MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ) :
- 21 ns
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 350W Tc
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Drain-source On Resistance-Max :
- 0.27Ohm
- DS Breakdown Voltage-Min :
- 500 V
- Maximum Operating Temperature :
- + 150 C
- Operating Mode :
- ENHANCEMENT MODE
- Tradename :
- PolarHV
- JESD-609 Code :
- e1
- Pulsed Drain Current-Max (IDM) :
- 50A
- Continuous Drain Current (ID) :
- 22A
- Qualification Status :
- Not Qualified
- Number of Terminals :
- 3
- Product Status :
- Active
- Transistor Type :
- 1 N-Channel
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Power Dissipation :
- 350W
- Published :
- 2006
- JEDEC-95 Code :
- TO-247AD
- Brand :
- IXYS
- Turn-Off Delay Time :
- 75 ns
- Number of Elements :
- 1
- Surface Mount :
- No
- Pin Count :
- 3
- Vgs (Max) :
- ±30V
- Terminal Position :
- Single
- Manufacturer :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- Package / Case :
- TO-247-3
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Mounting Type :
- Through Hole
- Transistor Polarity :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Terminal Form :
- THROUGH-HOLE
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminations :
- 3
- Datasheets
- IXTH22N50P
IXTH22N50P Documents

N-Channel Tube 270m Ω @ 11A, 10V ±30V 2630pF @ 25V 50nC @ 10V 500V TO-247-3
IXTH22N50P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 750 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2630pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 22 A.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 50A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTH22N50P Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 50A.
a 500V drain to source voltage (Vdss)
IXTH22N50P Applications
There are a lot of IXYS
IXTH22N50P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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